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    MOSFET AMPLIFIER CLASS AB RF Search Results

    MOSFET AMPLIFIER CLASS AB RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET AMPLIFIER CLASS AB RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet amplifier class ab rf

    Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


    Original     		PDF QPP-001 QPP-001 180max mosfet amplifier class ab rf "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB

    "RF MOSFET CLASS AB

    Abstract: RF MOSFET CLASS AB
    Text: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with


    Original     		PDF QPP-002 QPP-002 180max "RF MOSFET CLASS AB RF MOSFET CLASS AB

    25c2625

    Abstract: MHW1910 MHW1910-1 mos 4801
    Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ


    Original     		PDF MHW1910/D MHW1910-1 301AW MHW1910 25c2625 MHW1910-1 mos 4801

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original     		PDF MMRF1014N MMRF1014NT1

    Untitled

    Abstract: No abstract text available
    Text: STPA001 4 x 50 W MOSFET quad bridge power amplifier Datasheet - production data • Internally fixed gain 26 dB '!0'03 '!0'03 Flexiwatt27 Flexiwatt25 Features Description  Multipower BCD technology The STPA001 is a breakthrough MOSFET technology class AB audio power amplifier


    Original     		PDF STPA001 Flexiwatt27 Flexiwatt25 STPA001 DocID023043

    100B102JT50XT

    Abstract: 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor
    Text: RF Power Field Effect Transistor MRF284LR1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN-PCS/cellular radio


    Original     		PDF MRF284LR1 MRF284 100B102JT50XT 100B120JT500XT 100B100JT500XT CDR33BX104AKYS MRF284 MRF284LR1 T491X226K035AT 100B510JT500XT A04T-5 microstrip resistor

    500 watts amplifier schematic diagram pcb layout

    Abstract: MRF19090
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier


    Original     		PDF MRF19090 MRF19090S MRF19090 500 watts amplifier schematic diagram pcb layout

    MRF19030

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.


    Original     		PDF MRF19030 MRF19030S

    z40 mosfet

    Abstract: MRF19120
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120 z40 mosfet MRF19120

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF IntegrF19120 MRF19120S MRF19120

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120

    Z-34

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120 MRF19120S Z-34

    capacitor 226 35K

    Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21120 MRF21120S capacitor 226 35K 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k

    j438

    Abstract: MRF21010
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S j438

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.


    Original     		PDF MRF19120/D MRF19120 MRF19120/D

    CLASS AB MOSFET RF amplifier

    Abstract: No abstract text available
    Text: P/N 200-50-100-35-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 50 - 200 MHz 100 Watts Gain:35 dB Voltage: 24/28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw Frequency Range 50 to 200 MHz Gain


    Original     		PDF 200-50-100-35-E3 200-50-100-35-E3 CLASS AB MOSFET RF amplifier

    CLASS AB MOSFET RF amplifier

    Abstract: mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB DS1847 LDMOS
    Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DS1847, DS1848, base-station, rf power-amplifier Apr 06, 2004 APPLICATION NOTE 3175 Base-Station RF Power-Amplifier Biasing Power amplifiers used in base stations require biasing for proper RF performance. This article explains the two


    Original     		PDF DS1847, DS1848, DS1847 com/an3175 DS1847: DS1848: AN3175, APP3175, Appnote3175, CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf an3175 mosfet high power rf ldmos rf mosfet power amplifier mosfet class ab rf rf amplifier class a fet mosfet MOSFET amplifier RF CLASS AB LDMOS

    MDL-30-R

    Abstract: CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
    Text: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. • • • • • 87.5 ÷ 108 MHz 28 Volts Input / Output 50 Ω - 50 Ω Pout : 30 W


    Original     		PDF MDL30-R BLF245 120MHz 30MHz GR00070 MDL-30-R CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB

    smps 1kW

    Abstract: smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet
    Text: APT0001 By: Richard Frey, P.E. High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples 1 High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples Introduction With the improvement in high power MOSFETs of late


    Original     		PDF APT0001 smps 1kW smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet

    audio crossover filter

    Abstract: portable dvd player POWER SWITCH mosfet class-d table for speaker crossover 728k mosfet audio amplifier circuit A253 MAX4295 MAX4297 mosfet amplifier class ab rf
    Text: AMPLIFIER AND COMPARATOR CIRCUITS AUDIO CIRCUITS APP 1760: Sep 28, 2002 Class D Audio Amplifiers Save Battery Life This application note examines the operation and benefits of a Class D switch-mode audio amplifier. Switch-mode amplifiers such as the mono MAX4295 and stereo MAX4297 offer high


    Original     		PDF MAX4295 MAX4297 MAX4295: MAX4297: com/an1760 audio crossover filter portable dvd player POWER SWITCH mosfet class-d table for speaker crossover 728k mosfet audio amplifier circuit A253 mosfet amplifier class ab rf

    power mosfet audio amplifier class-A

    Abstract: square waves to sine waves filter portable dvd player POWER SWITCH what is application sawtooth wave CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf AN1760 APP1760 MAX4295 MAX4297
    Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS AUDIO CIRCUITS Keywords: audio amplifier, speaker driver, BTL, bridge-tied load, switching audio, Class D, PWM, switch-mode, Hbridge, efficiency Sep 28, 2002 APPLICATION NOTE 1760 Class D Audio Amplifiers Save Battery Life


    Original     		PDF MAX4295 MAX4297 com/an1760 MAX4295: AN1760, APP1760, Appnote1760, power mosfet audio amplifier class-A square waves to sine waves filter portable dvd player POWER SWITCH what is application sawtooth wave CLASS AB MOSFET RF amplifier mosfet amplifier class ab rf AN1760 APP1760

    150w audio amplifier circuit diagram class AB

    Abstract: 150W TRANSISTOR AUDIO AMPLIFIER 150w mosfet audio amplifier 150w class ab audio amplifier 150w audio amplifier circuit diagram class D 2 channel 150w audio amplifier circuit diagram class ab audio amplifier circuit transistor 9.1 surround sound amplifier 50W linear power amplifier CHINA MOBILE
    Text: Class D Amplifiers Empower Mobile Multimedia To meet growing consumer demands for flexible audio features and hi-fi sound from mobile terminals, designers of handset audio chips are optimising the class D amplifier to meet the special noise and power management demands of mobile applications.


    Original     		PDF Suite1800, 150w audio amplifier circuit diagram class AB 150W TRANSISTOR AUDIO AMPLIFIER 150w mosfet audio amplifier 150w class ab audio amplifier 150w audio amplifier circuit diagram class D 2 channel 150w audio amplifier circuit diagram class ab audio amplifier circuit transistor 9.1 surround sound amplifier 50W linear power amplifier CHINA MOBILE

    MAX9738

    Abstract: mosfet dc to dc boost converter 5.5v 0.1f TG45 ceramic speaker "Class G Amplifier"
    Text: 19-3700; Rev 0; 3/08 16VP-P Class G Amplifier with Inverting Boost Converter Features ♦ Integrated Inverting Boost Converter ♦ 2.7V to 5.5V Single-Supply Operation ♦ 16VP-P Output Voltage Swing, Ideal for Driving a Ceramic Speaker The MAX9738 features a mono Class G power amplifier with an integrated inverting boost converter. The


    Original     		PDF 16VP-P MAX9738 400mA 20-BUMP W202A2 mosfet dc to dc boost converter 5.5v 0.1f TG45 ceramic speaker "Class G Amplifier"