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    MOSFET 600V 48A Search Results

    MOSFET 600V 48A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V 48A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STE48NM60

    Abstract: No abstract text available
    Text: STE48NM60 N-CHANNEL 600V - 0.09Ω - 48A ISOTOP MDmesh Power MOSFET TYPE STE48NM60 VDSS RDS on ID 600V < 0.11Ω 48 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE


    Original     		PDF STE48NM60 STE48NM60

    Untitled

    Abstract: No abstract text available
    Text: AOWF12T60 600V,12A N-Channel MOSFET General Description Product Summary The AOWF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOWF12T60 AOWF12T60 O-262F

    Untitled

    Abstract: No abstract text available
    Text: AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary The AOTF12T60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along


    Original     		PDF AOTF12T60 AOTF12T60 AOTF12T60L O-220F

    80N60

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFR80N60P3 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3

    Untitled

    Abstract: No abstract text available
    Text: AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max


    Original     		PDF AOB12T60P/AOTF12T60P O-263 O-220F AOB12T60P AOTF12T60P AOB12T60PL AOTF12T60PL O-263

    Untitled

    Abstract: No abstract text available
    Text: AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 48A RDS(ON),max


    Original     		PDF AOTF12T50P O-220F O-220F

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR48N60Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 32A Ω 154mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR48N60Q3 300ns ISOPLUS247 E153432 48N60Q3

    IXFR48N60Q3

    Abstract: 6V01
    Text: Advance Technical Information IXFR48N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 32A Ω 154mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR48N60Q3 300ns ISOPLUS247 E153432 48N60Q3 IXFR48N60Q3 6V01

    Untitled

    Abstract: No abstract text available
    Text: AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 48A RDS(ON),max < 0.52Ω


    Original     		PDF AOWF12T60P O-262F

    IXFR80N60P3

    Abstract: No abstract text available
    Text: IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 48A  85m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 IXFR80N60P3

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    washing machine circuit diagram universal motor y

    Abstract: slip ring induction motor universal washing machine motor scalar control of induction motor m 9583 transistor axial speed control of 1 phase induction motor by using scr pwm 600w inverter diagram speed control of induction motor by using scr 12v dc motor speed controller using igbt pwm USING TRIAC IN STARTING SINGLE PHASE induction mo
    Text: A Reference Guide for Motor Control S T M P 1 U T T I N G I C R O E L E C T R O N I C S Y O I O U F Y N O U R C O N T R O L M O T O R 2 Contents Introduction 4 Product Family Highlights 5 The Universal Motor 6 The Brush DC Motor 8 The Single-Phase Induction Motor


    Original     		PDF CH-1215 26B/10 SL71Y BRMOTOR/1000 washing machine circuit diagram universal motor y slip ring induction motor universal washing machine motor scalar control of induction motor m 9583 transistor axial speed control of 1 phase induction motor by using scr pwm 600w inverter diagram speed control of induction motor by using scr 12v dc motor speed controller using igbt pwm USING TRIAC IN STARTING SINGLE PHASE induction mo

    220v AC voltage stabilizer schematic diagram

    Abstract: smps circuit diagram 450w DATASHEET OF IC 741C ATX smps troubleshooting atx power supply 450W schematic PWM 220v ac stabilizer aPPLICATION NOTES ON KA3525A ka3842a application note atx power supply 450W SG6105
    Text: POWER S O L U T I O N S Fairchild’s Power Solutions Fairchild Semiconductor is a global leader in delivering energy-efficient power analog, power discrete, and optoelectronic solutions. These products maximize energy savings in power-sensitive applications such as power


    Original     		PDF

    mosfet 1200V 40A

    Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
    Text: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXBH40N160 IXBH40N160, 200ns. mosfet 1200V 40A Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160

    IXAN0016

    Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
    Text: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the


    Original     		PDF IXAN0016 IXBH40N160 IXBH40N160, 200ns. IXAN0016 pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    IXAN0015

    Abstract: 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit
    Text: Home < IEEE PEDS 2001 - INDONESIA IXAN0015 Use of BiMOSFETs in Modern Radar Transmitters Ralph E. Locher and Abhijit D. Pathak, Member, IEEE g reduced by irradiation. The end result is a device, which can be optimized for either high frequency or low frequency


    Original     		PDF IXAN0015 IXAN0015 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit

    IR2132 APPLICATION NOTE

    Abstract: IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S
    Text: Data Sheet No. PD60019J IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V


    Original     		PDF PD60019J IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 MOS90245 IR2132 APPLICATION NOTE IR2130 APPLICATION NOTE ir2130 Mosfet driver IR2130 ir2130 application IR2130 3 phase irf840 power supply application IR2130 Drive circuit for IGBT using IR2130 IR2130S

    IR2130 3 phase

    Abstract: ir2130 IR2130 APPLICATION NOTE ir2130 application transistor b143 IR2130S irf840 power supply power supply IRF830 APPLICATION IR2130J b137 transistor
    Text: Data Sheet No. PD-6.019F IR2130 3-PHASE BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels


    Original     		PDF IR2130 IR2130 IRF830) IRF840) IRF450) B-155 IR2130 3 phase IR2130 APPLICATION NOTE ir2130 application transistor b143 IR2130S irf840 power supply power supply IRF830 APPLICATION IR2130J b137 transistor

    IR2132 APPLICATION NOTE

    Abstract: power supply IRF830 APPLICATION 12A, 600V Current Sensing N-Channel IGBT ir2132 ir2132j irf840 power supply B-169 IR2132S MP150
    Text: Data Sheet No. PD-6.033E IR2132 3-PHASE BRIDGE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels


    Original     		PDF IR2132 IR2132 IRF830) IRF840) IRF450) B-185 IR2132 APPLICATION NOTE power supply IRF830 APPLICATION 12A, 600V Current Sensing N-Channel IGBT ir2132j irf840 power supply B-169 IR2132S MP150

    IR2130

    Abstract: static characteristics of mosfet and igbt CA50 IR2130J IR2130S IR2132 IR2132J IR2132S IRF820 IRF830
    Text: Data Sheet No. PD60019J IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune · Gate drive supply range from 10 to 20V


    Original     		PDF PD60019J IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 IR2131 IR2130 static characteristics of mosfet and igbt CA50 IR2130J IR2130S IR2132 IR2132J IR2132S IRF820 IRF830

    igbt driver ir2130 circuit

    Abstract: irf45
    Text: Data Sheet No. PD60019-K IR2130/IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60019-K IR2130/IR2132 IR2130/IR2132 IRGPC20KD2) IR2130J/IR2132J IRGPC30KD2) IRGPC40KD2) IRGPC50KD2) igbt driver ir2130 circuit irf45

    IR2130 3 phase

    Abstract: No abstract text available
    Text: International IÖR Rectifier Data Sheet No. PD-6.019F IR2130 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V


    OCR Scan     		PDF IR2130 0-20V IR2130 IRF830) IRF820) IRF840) IR2130 3 phase