Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
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P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
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PTE10026
Abstract: No abstract text available
Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation
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Tota20/97
5801-PC
P4917-ND
P5276
5701-PC
PTE10026
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PHILIPS capacitors 0.1 mf
Abstract: Transistor t 2 smd motorola
Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AR3
PHILIPS capacitors 0.1 mf
Transistor t 2 smd motorola
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transistor D 1666
Abstract: PTE10021 bq 726
Text: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output
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KYS 30-40
Abstract: BG5130R BCR108S FW-50
Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction
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BG5130R
OT363
KYS 30-40
BG5130R
BCR108S
FW-50
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
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BF998WR
OT343R
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
DS9248-00
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RT9602
Abstract: No abstract text available
Text: RT9243 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9243 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9243 controls 2, 3 or 4 buck switching stages
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RT9243
RT9243
32-Lead
DS9243-05
RT9602
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RT9602
Abstract: No abstract text available
Text: RT9244 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9244 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9244 controls 2, 3 or 4 buck switching stages
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RT9244
RT9244
32-Lead
DS9244-02
RT9602
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Untitled
Abstract: No abstract text available
Text: Preliminary RT9247 Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9247 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9247 controls 2 or 3 buck switching stages operating
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RT9247
RT9247
28-Lead
DS9247-03
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
28-Lead
DS9248-03
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Untitled
Abstract: No abstract text available
Text: RT9243 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9243 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9243 controls 2, 3 or 4 buck switching stages
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RT9243
RT9243
32-Lead
DS9243-03
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Untitled
Abstract: No abstract text available
Text: RT9248A Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248A is a cost-effective multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248A controls 2 or 3 buck switching stages
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RT9248A
RT9248A
DS9248A-07
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Untitled
Abstract: No abstract text available
Text: RT9248 Preliminary Multi-Phase PWM Controller for CPU Core Power Supply General Description Features The RT9248 is a multi-phase buck DC/DC controller integrated with all control functions for GHz CPU VRM. The RT9248 controls 2 or 3 buck switching stages operating
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RT9248
RT9248
28-Lead
DS9248-04
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125EU
AGR21125EF
AGR21125End
sm 4500
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TH 2190 HOT Transistor
Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
AGR21180EF
DS04-167RFPP
DS04-124RFPP)
TH 2190 HOT Transistor
TH 2190 mosfet
JESD22-C101A
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C15B material sheet
Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access
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AGR21125E
AGR21125E
AGR21125EU
AGR21125EF
DS04-166RFPP
DS04-108RFPP)
C15B material sheet
C14A
AGR21125EF
AGR21125EU
C10A
C11A
C12A
C12D
JESD22-C101A
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TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
TH 2190 HOT Transistor
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J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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AGR045010
Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
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AGRA10E
AGRA10E
IS-95
DS04-096RFPP
DS03-161RFPP)
AGR045010
AGRA10EU
JESD22-C101A
RF MOSFET CLASS AB
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PE4140
Abstract: PE4140-02 617DB-1024 ETC1-1-13 PE4140-00 PE4140-01 PE4140-EK
Text: PRODUCT SPECIFICATION PE4140 Ultra-High Linearity Broadband Quad MOSFET Array Product Description The PE4140 is an ultra-high linearity, passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array
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PE4140
PE4140
PE4140-02
617DB-1024
ETC1-1-13
PE4140-00
PE4140-01
PE4140-EK
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0203S
Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Text: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz
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AGRA10XM
AGRA10
IS-95
DS04-139RFPP
DS03-127RFPP)
0203S
AGRA10XM
JESD22-C101A
J162
j507
MOSFET J147
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617DB-1024
Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
617DB-1024
ETC1-1-13
PE4140-06DFN
PE4140-EK
PE4140G-06DFN
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AGRB10E
Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
Text: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)
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AGRB10E
AGRB10E
DS04-097RFPP
DS03-164RFPP)
AGRB10E equivalent
JESD22-C101A
1661 mhz
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