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    MOSFET 6 GHZ Search Results

    MOSFET 6 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and


    Original     		PDF P4525-ND P5782-ND 1-877-GOLDMOS 1301-PTF

    smd transistor marking j2

    Abstract: Transistor z1
    Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 smd transistor marking j2 Transistor z1

    455 mhz if transformer

    Abstract: ETK42T marking acom PE4120 E-Series transformer 412-021
    Text: Preliminary Datasheet PE4120 High Linearity MOSFET Quad Mixer Features • High linearity: IIP3 +28 dBm through 2 GHz +20 dBm LO • Low conversion loss: 6 dB through 2 GHz (+20 dBm LO) • Passive operation • Broadband performance • Low Cost Product Description


    Original     		PDF PE4120 PE4120 455 mhz if transformer ETK42T marking acom E-Series transformer 412-021

    smd transistor marking z3

    Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2

    PHILIPS capacitors 0.1 mf

    Abstract: Transistor t 2 smd motorola
    Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 PHILIPS capacitors 0.1 mf Transistor t 2 smd motorola

    3A412

    Abstract: nippon capacitors 2508051107Y0 MRF9210 MRF9210R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 6, 9/2008 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210 MRF9210R3 3A412 nippon capacitors 2508051107Y0 MRF9210 MRF9210R3

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9210 Rev. 3, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210 MRF9210R3 MRF9210 nippon capacitors

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    BG5120K

    Abstract: BCR108S
    Text: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range


    Original     		PDF BG5120K OT363 BG5120K BCR108S

    KYS 30-40

    Abstract: BG5130R BCR108S FW-50
    Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners 1 with 3V up to 5V supply voltage 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction


    Original     		PDF BG5130R OT363 KYS 30-40 BG5130R BCR108S FW-50

    KYS 30-40

    Abstract: BG5130R BCR108S
    Text: BG5130R DUAL - N-Channel MOSFET Tetrode • Low noise gain controlled input 4 5 6 stages of UHF-and VHF - tuners with 3V up to 5V supply voltage 1 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction


    Original     		PDF BG5130R OT363 KYS 30-40 BG5130R BCR108S

    Untitled

    Abstract: No abstract text available
    Text: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction


    Original     		PDF BG5120K OT363

    PTF10026

    Abstract: U016 10026 IEC-68-2-54
    Text: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF IEC-68-2-54 Std-002-A P4917-ND P5276 5701-PC 20AWG, PTF10026 U016 10026

    ATC 1084

    Abstract: pte10011
    Text: ERICSSON $ PTE 10011* 6 Watts, 1.5 GHz LDMOS Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF IEC-68-2-54 Std-002-A Po200 P4917-ND P5276 G-200 ATC 1084 pte10011

    transistor 0882

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 10111* 6 Watts, to 1.5 GHz LDMOS Field Effect Transistor Description The 10111 is a com mon source n-channel enhancem ent-m ode lateral MOSFET intended for large signal am plifier applications to 1,5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P5276 G-200 transistor 0882

    PTE10026

    Abstract: No abstract text available
    Text: E R IC SSO N í PTE 10026* 6 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF Tota20/97 5801-PC P4917-ND P5276 5701-PC PTE10026

    Transistor AC 51 0865 75 834

    Abstract: ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson
    Text: E R IC SSO N í PTE 10011* 6 Watts, H F - 1 . 5 GHz L D M O S Field Effect Transistor Description The 10011 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.5 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation


    OCR Scan     		PDF P4917-ND P5276 GI-200 Transistor AC 51 0865 75 834 ATC 1084 fe 5571 AC 51 0865 Transistor AC 51 0865 75 730 ic atc 1084 PTE 10011 Ericsson

    re 10019

    Abstract: 10019
    Text: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum


    OCR Scan     		PDF P5276 P4917-ND ber1997 re 10019 10019

    transistor D 1666

    Abstract: PTE10021 bq 726
    Text: E R IC SSO N í PTE 10021* 30 Watts, 1 . 4 - 1 . 6 GHz L D M O S Field Effect Transistor Description The 10021 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applica­ tions in the 1.4 to 1.6 GHz range. It is rated at 30 watts minimum output


    OCR Scan     		PDF

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


    OCR Scan     		PDF BB515 p270k2 transistor Bs 998

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Dual-gate MOS-FET BF1100WR PINNING FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz


    OCR Scan     		PDF BF1100WR OT343R OT343R.

    TRANSISTOR mosfet BF998

    Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
    Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet