FSS430
Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70
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JANSR2N7402
FSS430R4
R2N74
FSS430
2E12
3E12
FSS430R4
JANSR2N7402
Rad Hard in Fairchild for MOSFET
J-112
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D4NK5
Abstract: D4NK50ZD P4NK50ZD P4NK50Z D4NK50Z F4NK50ZD STD4NK50ZD STD4NK50ZD-1 STF4NK50ZD STP4NK50ZD
Text: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W
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STD4NK50ZD
STD4NK50ZD-1
STF4NK50ZD
STP4NK50ZD
O-220
O-220FP-
STD4NK50ZD
STF4NK50ZD
D4NK5
D4NK50ZD
P4NK50ZD
P4NK50Z
D4NK50Z
F4NK50ZD
STD4NK50ZD-1
STP4NK50ZD
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D4NK5
Abstract: P4NK50ZD D4NK50ZD-1 d4nk50zd F4NK50ZD F 25.1 A zener diode D4NK P4NK50Z D4NK50Z *D4NK5
Text: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-CHANNEL 500V - 2.4Ω - 3A - TO-220 /FP- DPAK - IPAK Fast Diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W STF4NK50ZD
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STD4NK50ZD
STD4NK50ZD-1
STF4NK50ZD
STP4NK50ZD
O-220
O-220
D4NK5
P4NK50ZD
D4NK50ZD-1
d4nk50zd
F4NK50ZD
F 25.1 A zener diode
D4NK
P4NK50Z
D4NK50Z
*D4NK5
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D4NK5
Abstract: P4NK50Z
Text: STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw 3 1 STD4NK50ZD-1 500V <2.7Ω 3A 45W STD4NK50ZD 500V <2.7Ω 3A 45W
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STD4NK50ZD
STD4NK50ZD-1
STF4NK50ZD
STP4NK50ZD
O-220
O-220FP-
STD4NK50ZD
STF4NK50ZD
D4NK5
P4NK50Z
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Untitled
Abstract: No abstract text available
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD3NM50
STD3NM50-1
O-252
O-251
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diode circuit diagram
Abstract: No abstract text available
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V < 3Ω < 3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD3NM50
STD3NM50-1
O-252
O-251
diode circuit diagram
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STD3NM50
Abstract: STD3NM50-1
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD3NM50 STD3NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V <3Ω <3Ω 3A 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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STD3NM50
STD3NM50-1
STD3NM50
STD3NM50-1
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2E12
Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7402
FSS430R4
2E12
3E12
FSS430R4
JANSR2N7402
relay 12v 300 ohm
FSS430
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p12nm50
Abstract: STB12NM50FD STB12NM50FD-1 STP12NM50FD STP12NM50FDFP STW14NM50FD
Text: STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STB12NM50FD 500V <0.4Ω 12A 160W STB12NM50FD-1 500V <0.4Ω
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STB12NM50FD
STB12NM50FD-1
STP12NM50FD/FP
STW14NM50FD
O-220/FP
O-247
STB12NM50FD
STP12NM50FDFP
p12nm50
STB12NM50FD-1
STP12NM50FD
STP12NM50FDFP
STW14NM50FD
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p12nm50
Abstract: B12NM50 w14nm50 STB12NM50FD STB12NM50FD-1 STP12NM50FD STP12NM50FDFP STW14NM50FD 0118C
Text: STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STB12NM50FD 500V <0.4Ω 12A 160W STB12NM50FD-1 500V <0.4Ω
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STB12NM50FD
STB12NM50FD-1
STP12NM50FD/FP
STW14NM50FD
O-220/FP
O-247
STB12NM50FD
STP12NM50FDFP
p12nm50
B12NM50
w14nm50
STB12NM50FD-1
STP12NM50FD
STP12NM50FDFP
STW14NM50FD
0118C
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Untitled
Abstract: No abstract text available
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7402
FSS430R4
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2E12
Abstract: 3E12 FRS430D FRS430H FRS430R Rad Hard in Fairchild for MOSFET
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS430D
FRS430H
FRS430R
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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2E12
Abstract: 3E12 FRS430D FRS430H FRS430R 794V
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
2E12
3E12
FRS430D
FRS430H
FRS430R
794V
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Untitled
Abstract: No abstract text available
Text: STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM50 500V < 2.8 Ω 3A TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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STD3NM50
STD3NM50
STD3NM50-1
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N50K-MK Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
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3N50K-MK
3N50K-MK
QW-R205-036
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AOT3N50
Abstract: AOTF3N50
Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Features The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT3N50/AOTF3N50
AOT3N50
AOTF3N50
O-220
O-220F
AOTF3N50
AOT3N50
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FDD6N50
Abstract: No abstract text available
Text: FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)
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FDD6N50TM
FDD6N50
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FDD6N50
Abstract: No abstract text available
Text: FDD6N50TM_F085 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)
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FDD6N50TM
FDD6N50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N50 Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220F
O-252
QW-R502-530
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AOT3N50
Abstract: AOTF3N50
Text: AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT3N50/AOTF3N50
AOT3N50
AOTF3N50
AOT3N50L
AOTF3N50L
O-220
O-220F
AOT3N50
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VIVA
Abstract: No abstract text available
Text: FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.52Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRS430D,
FRS430R,
FRS430H
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
-257AA
VIVA
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Untitled
Abstract: No abstract text available
Text: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 3A, 500V, RDS on = 2.50S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRM430D,
FRM430R,
FRM430H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
desi45
O-204AA
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dioda BY 235
Abstract: DIODA SS 14
Text: IR FR /U 420A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ By* = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ Vos = 500V
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IRFR/U420A
dioda BY 235
DIODA SS 14
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