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    MOSFET 500V 18A Search Results

    MOSFET 500V 18A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 500V 18A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDPF18N50T

    Abstract: No abstract text available
    Text: UniFETTM FDP18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50T FDPF18N50T PDF

    fdp18n50

    Abstract: FDPF18N50
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 PDF

    FDP18N50

    Abstract: FDPF18N50T FDPF18N50
    Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50T FDPF18N50T PDF

    18N50T

    Abstract: fdpf18n50t
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 FDPF18N50T 18N50T PDF

    FDPF18N50T

    Abstract: FDP18N50
    Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50T FDPF18N50T PDF

    fdp18n50

    Abstract: FDPF18N50 MOSFET 500V 18A
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 MOSFET 500V 18A PDF

    FDPF

    Abstract: FDP18N50 FDPF18N50 MOSFET 500V 18A
    Text: TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 FDPF MOSFET 500V 18A PDF

    Mosfet

    Abstract: SSF18N50F
    Text: SSF18N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.22ohm(typ.) ID 18A TO- 220F Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and


    Original     		SSF18N50F 22ohm O220F O-220F Mosfet SSF18N50F PDF

    ISD18A

    Abstract: MOSFET 500V 18A 18n50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		18N50 18N50 QW-R502-477 ISD18A MOSFET 500V 18A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		18N50 18N50 O-220F1 O-220F2 QW-R502-477 PDF

    FQA18N50AV2,18N50,AV218N50,FDA18N50

    Abstract: 18N50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1   TO-230 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


    Original     		18N50 O-230 18N50 O-220F1 O-220F2 O-220 QW-R502-477 FQA18N50AV2,18N50,AV218N50,FDA18N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 500V / 18A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY18N50W 500V, RDS(ON)=0.32W@VGS=10V, ID=9A


    Original     		HY18N50W 2002/95/EC MIL-STD-750 2026oted) 250mA 125oC -55oC 11-Jan-2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSM18N50V2/KSMF18N50V2 500V N-Channel MOSFET TO-220F TO-220 Features • • • • • • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		KSM18N50V2/KSMF18N50V2 O-220F O-220 54TYP 00x45Â PDF

    18N50

    Abstract: 18n50 mosfet 477 diode 18N50G-TF1-T 18N50G-TF2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche


    Original     		18N50 18N50 O-220F1 O-220F2 O-263 QW-R502-477 18n50 mosfet 477 diode 18N50G-TF1-T 18N50G-TF2-T PDF

    18N50

    Abstract: 18N50L
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche


    Original     		18N50 O-220F1 18N50 O-220F2 QW-R502-477 18N50L PDF

    18n50

    Abstract: 18N50G 18n50 mosfet 477 diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche


    Original     		18N50 O-220F1 18N50 O-220F2 QW-R502-477 18N50G 18n50 mosfet 477 diode PDF

    FQA18N50AV2,18N50,AV218N50,FDA18N50,FQA18N50V2

    Abstract: MDP18N50,18N50 FQA18N50AV2,18N50,AV218N50,FDA18N50 18N50+equivalent 18n50 mosfet 18n50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1  DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the


    Original     		18N50 18N50 O-220F1 O-220F2 O-263 O-220F QW-R502-477 FQA18N50AV2,18N50,AV218N50,FDA18N50,FQA18N50V2 MDP18N50,18N50 FQA18N50AV2,18N50,AV218N50,FDA18N50 18N50+equivalent 18n50 mosfet PDF

    S18A

    Abstract: No abstract text available
    Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available


    OCR Scan     		2N7218 2N7219 2N7221 2N7222 O-254AA S18A PDF

    TRANSISTOR PEC 545

    Abstract: 2N7221 transistor 2Fn 1256C 2N7218 2N7219 2N7222
    Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Ceramic Feedthroughs Available


    OCR Scan     		2N7218 2N7221 2N7219 2N7222 O-254AA 534-5776FAX t1073 TRANSISTOR PEC 545 transistor 2Fn 1256C 2N7222 PDF

    2N7218

    Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
    Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated


    Original     		2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, 2N7218 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219 PDF

    9528

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		IRFY430 IRFY430M O-257AB O220M O-257AB) IRFY430M 9528 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		IRFY430 IRFY430M O-257AB 280mJ O220M O-257AB) IRFY430 PDF

    luo24

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 O UTLINE DRAWING Dimensions in mm 4.5 r~ ! ! •i 1.5 j . 500V • TDS ON (MAX) .0.50Q.


    OCR Scan     		FK18SM-10 150ns 5710e luo24 PDF

    400V to 12V DC Regulator

    Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
    Text: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		1741A IRHNB7460SE MIL-STD-750, MlL-STD-750, 400V to 12V DC Regulator IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh PDF