FSS430
Abstract: 2E12 3E12 FSS430R4 JANSR2N7402 Rad Hard in Fairchild for MOSFET J-112
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 02 /Subject (3A, 500V, 2.70 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3A, 500V, 2.70
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JANSR2N7402
FSS430R4
R2N74
FSS430
2E12
3E12
FSS430R4
JANSR2N7402
Rad Hard in Fairchild for MOSFET
J-112
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B20NM50FD
Abstract: P20NM50FD F20NM50D P20NM50 STP20NM50FD B20NM50 STB20NM50FD STF20NM50D ZVS phase-shift converters
Text: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STF20NM50D STB20NM50FD 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC
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STP20NM50FD
STF20NM50D
STB20NM50FD
O-220/TO-220FP/D2PAK
STF20NM50D
B20NM50FD
P20NM50FD
F20NM50D
P20NM50
STP20NM50FD
B20NM50
STB20NM50FD
ZVS phase-shift converters
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20nm50
Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP V435
Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A
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STP20NM50
STP20NM50FP
STB20NM50
STB20NM50-1
O-220/FP/D2PAK/I2PAK
STP20NM50/FP
STB20NM50
20nm50
STB20NM50-1
STP20NM50FP
V435
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20NM50
Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A
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STP20NM50
STP20NM50FP
STB20NM50
STB20NM50-1
O-220/FP/D2PAK/I2PAK
STP20NM50/FP
STB20NM50
20NM50
STB20NM50-1
STP20NM50FP
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Untitled
Abstract: No abstract text available
Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A
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O-220/FP/D2PAK/I2PAK
STP20NM50/FP
STB20NM50
STB20NM50-1
STP20NM50
STP20NM50FP
O-220
O-220FP
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STP20NM50FP
Abstract: 20nm50 STB20NM50 STB20NM50-1 STP20NM50
Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A 20 A
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STP20NM50
STP20NM50FP
STB20NM50
STB20NM50-1
O-220/FP/D2PAK/I2PAK
STP20NM50/FP
STB20NM50
STP20NM50FP
20nm50
STB20NM50-1
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DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
DM t 96 10a 250v
IRFY11N50CMA
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4167A
O-257AA)
IRFY11N50CMA
O-257AA
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Untitled
Abstract: No abstract text available
Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
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FQPF10N50CF
Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQP10N50CF
FQPF10N50CF
FQPF10N50CF
FQPF Series
mosfet 500v 10A
mosfet 10a 500v
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Untitled
Abstract: No abstract text available
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP
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STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O220-TO220FP-D2PAK
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
O-220
O-220FP
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P11NK40Z
Abstract: P11NK40 P11NK40ZFP STP11NK40Z
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO220-TO220FP-D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK50Z 500V <0.55Ω 10A 110W STP11NK50Z 500V <0.55Ω 10A 110W 3 3 1 STP11NK50ZFP
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STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O220-TO220FP-D2PAK
STB11NK50Z
STP11NK50Z
STP11NK50ZFP
O-220
O-220FP
P11NK40Z
P11NK40
P11NK40ZFP
STP11NK40Z
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P channel MOSFET 1A
Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
P channel MOSFET 1A
2E12
3E12
FRM450D
FRM450H
FRM450R
Rad Hard in Fairchild for MOSFET
250V 10A TF 106
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Untitled
Abstract: No abstract text available
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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20nm50
Abstract: N-Channel mosfet 400v to220 STB20NM50-1 STP20NM50 STP20NM50FP
Text: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I²PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω
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STP20NM50
STP20NM50FP
STB20NM50-1
O-220/TO-220FP/I
STP20NM50/FP
20nm50
N-Channel mosfet 400v to220
STB20NM50-1
STP20NM50FP
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2E12
Abstract: 3E12 FSL430R4 JANSR2N7398
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7398
FSL430R4
2E12
3E12
FSL430R4
JANSR2N7398
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2E12
Abstract: 3E12 FSS430R4 JANSR2N7402 relay 12v 300 ohm FSS430
Text: JANSR2N7402 Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7402
FSS430R4
2E12
3E12
FSS430R4
JANSR2N7402
relay 12v 300 ohm
FSS430
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20nm50
Abstract: No abstract text available
Text: STP20NM50 - STP20NM50FP STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/TO-220FP/I PAK MDmesh Power MOSFET TARGET DATA TYPE • ■ ■ ■ ■ ■ VDSS RDS on ID STP20NM50/FP 500V <0.230Ω 20 A STB20NM50-1 500V <0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω
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O-220/TO-220FP/I
STP20NM50/FP
STB20NM50-1
STP20NM50
STP20NM50FP
O-220
O-220FP
20nm50
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BUZ45B
Abstract: TA17435 BUZ-45B BUZ45 transistor BUZ45 500V N-Channel MOSFET ID 29A
Text: BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.500Ω (BUZ45 field effect transistor designed for applications such as
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BUZ45B
BUZ45
TA17435.
BUZ45B
TA17435
BUZ-45B
transistor BUZ45
500V N-Channel MOSFET ID 29A
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250V 10A TF 106
Abstract: No abstract text available
Text: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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FRM450D,
FRM450R,
FRM450H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-204AA
250V 10A TF 106
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRFY11N50CMA
O-257AA
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Untitled
Abstract: No abstract text available
Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I 2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP20NM50FD STB20NM50FD-1 • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V 500V <0.25Ω <0.25Ω 20 A 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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O-220/I
STP20NM50FD
STB20NM50FD-1
O-220
O-220)
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PDF
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Untitled
Abstract: No abstract text available
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
FSL430R4
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mosfet 20A 500V
Abstract: FDP20N50 "Power Diode" 500V 20A FDPF20N50
Text: TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP20N50
FDPF20N50
FDPF20N50
mosfet 20A 500V
"Power Diode" 500V 20A
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