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    MOSFET 500V Search Results

    MOSFET 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H5N5001FM-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 5A 1.5Mohm To-220Fm Visit Renesas Electronics Corporation
    H5N5006DL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1832-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK2408-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 7A 900Mohm To-220Ab Visit Renesas Electronics Corporation

    MOSFET 500V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFM460

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500 IRFM460 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90727B POWER MOSFET THRU-HOLE TO-254AA IRFM460 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM460 0.27 Ω 19A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    90727B O-254AA) IRFM460 O-254AA. MIL-PRF-19500 PDF

    IRFMA450

    Abstract: No abstract text available
    Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    IRFMA450 O-254AA) O-254AA. MIL-PRF-19500 IRFMA450 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    IRFMA450 O-254AA) O-254AA. MIL-PRF-19500 PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


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    FDA16N50 PDF

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


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    IRF820 IRF82 O220AB IRF820 irf-82 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


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    UF830 O-220 UF830L UF830-TA3-T UF830es QW-R502-046 PDF

    ISD18A

    Abstract: MOSFET 500V 18A 18n50
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


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    18N50 18N50 QW-R502-477 ISD18A MOSFET 500V 18A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.


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    18N50 18N50 O-220F1 O-220F2 QW-R502-477 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


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    UF830 UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F UF830L-TF1-T QW-R502-046 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching


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    UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612 PDF

    specifications of power mosfet

    Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


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    UF840 O-220 O-220F1 O-220F2 O-220F O-262 O-263 QW-R502-047 specifications of power mosfet N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A PDF

    UF840

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


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    UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840G-TF3-T UF840L-TF3T-T UF840 PDF

    SMD TRANSISTOR 12a

    Abstract: IRFN450 JANTX2N7228U JANTXV2N7228U 400V Single N-Channel HEXFET Power MOSFET
    Text: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International


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    90418C IRFN450 JANTX2N7228U JANTXV2N7228U MIL-PRF-19500/592 SMD TRANSISTOR 12a IRFN450 JANTX2N7228U JANTXV2N7228U 400V Single N-Channel HEXFET Power MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 90418C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International


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    90418C IRFN450 JANTX2N7228U JANTXV2N7228U MIL-PRF-19500/592 PDF

    MOSFET 50V 100A TO-220

    Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    UF840 O-220 O-220F UF840L UF840-TA3-T UF840L-TA3-T QW-R502-047 MOSFET 50V 100A TO-220 UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T PDF

    fda16n50_f109

    Abstract: FDA16N50-F109
    Text: FDA16N50_F109 N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 m Features Description • RDS on = 380 m (Max.) @ VGS = 10, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDA16N50 fda16n50_f109 FDA16N50-F109 PDF

    IRFM440

    Abstract: JANTX2N7222 JANTXV2N7222 JANTX2N7222 spice
    Text: PD - 90492D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM440 JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International


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    90492D O-254AA) IRFM440 JANTX2N7222 JANTXV2N7222 MIL-PRF-19500/596 O-254AA. MIL-PRF-19500 IRFM440 JANTX2N7222 JANTXV2N7222 JANTX2N7222 spice PDF

    UF830L

    Abstract: UF830G UF830 max3103
    Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    UF830 O-220 O-220F O-262 O-251 O-252 UF830L-TA3-T UF830G-TA3-Tt QW-R502-046 UF830L UF830G UF830 max3103 PDF

    IRFN440

    Abstract: JANTX2N7222U JANTXV2N7222U
    Text: PD - 91552C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN440 JANTX2N7222U JANTXV2N7222U REF:MIL-PRF-19500/596 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN440 0.85 Ω 8.0A HEXFET® MOSFET technology is the key to International


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    91552C IRFN440 JANTX2N7222U JANTXV2N7222U MIL-PRF-19500/596 IRFN440 JANTX2N7222U JANTXV2N7222U PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


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    UF840 UF840L-TA3-T UF840G-TA3-T UF840L-TF1-T UF840G-TF1-T UF840L-TF2-T UF840G-TF2-T UF840L-TF3-T UF840Gat QW-R502-047 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15NM50 Preliminary Power MOSFET 15A, 500V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 15NM50 is an Super Junction MOSFET Structure . It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state


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    15NM50 15NM50 QW-R205-043 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N50K-MT Power MOSFET 11A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N50K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,


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    11N50K-MT 11N50K-MT QW-R502-B25 PDF