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Vishay Siliconix IRF820APBF MOSFET N-CH 500V 2.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF820APBF	Tube	4,204		1	1 $1.97 10 $1.97 100 $1.97 1000 $0.7 10000 $0.7	Buy Now
Vishay Siliconix IRF820PBF MOSFET N-CH 500V 2.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF820PBF	Tube	2,001		1	1 $1.95 10 $1.95 100 $1.95 1000 $0.60888 10000 $0.5065	Buy Now
RS	IRF820PBF	Bulk			1,000	1 - 10 - 100 - 1000 $1 10000 $0.95	Get Quote
Vishay Siliconix IRF820STRRPBF MOSFET N-CH 500V 2.5A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF820STRRPBF	Digi-Reel	1,536		1	1 $2.59 10 $1.669 100 $2.59 1000 $2.59 10000 $2.59	Buy Now
	IRF820STRRPBF	Cut Tape	1,536		1	1 $2.59 10 $1.669 100 $2.59 1000 $2.59 10000 $2.59	Buy Now
	IRF820STRRPBF	Reel	800		800	1 - 10 - 100 - 1000 $0.86835 10000 $0.74875	Buy Now
Vishay Siliconix IRF820ASPBF MOSFET N-CH 500V 2.5A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF820ASPBF	Tube	733		1	1 $2.22 10 $2.22 100 $2.22 1000 $0.70934 10000 $0.6075	Buy Now
Vishay Siliconix IRF820APBF-BE3 MOSFET N-CH 500V 2.5A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF820APBF-BE3	Tube	714		1	1 $2.47 10 $2.47 100 $2.47 1000 $0.79952 10000 $0.7	Buy Now

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IRF82 Datasheets (187)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF82	STMicroelectronics		Scan	PDF
IRF820	Bay Linear	POWER MOSFET	Original	PDF
IRF820	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF820	Intersil	2.5A, 500V, 3.000 ?, N-Channel Power MOSFET	Original	PDF
IRF820	STMicroelectronics	N-channel 500V - 2.5O - 4A - TO-220 PowerMESH II MOSFET	Original	PDF
IRF820	STMicroelectronics	N-CHANNEL 500V - 2.5 ? - 4A - TO-220 POWERMESH	Original	PDF
IRF820	STMicroelectronics	N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET	Original	PDF
IRF820	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF820	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 2.5A TO-220AB	Original	PDF
IRF820	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF820	Fairchild Semiconductor	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V	Scan	PDF
IRF820	FCI	POWER MOSFETs	Scan	PDF
IRF820	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF820	General Electric	Power Transistor Data Book 1985	Scan	PDF

IRF820	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A.	Scan	PDF
IRF820	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF820	International Rectifier	TO-220 Plastic Package HEXFETs	Scan	PDF
IRF820	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRF820	International Rectifier	TO-220 HEXFET Power MOSFET	Scan	PDF
IRF820	International Rectifier	HEXFET Power Mosfet	Scan	PDF

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IRF82 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF820PBF Abstract: No abstract text available Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements	Original	IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF	PDF
Untitled Abstract: No abstract text available Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF820S, SiHF820S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
D 92 M - 02 DIODE Abstract: No abstract text available Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements	Original	IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE	PDF
Untitled Abstract: No abstract text available Text: PD - 94979 IRF820PbF • Lead-Free Document Number: 91059 02/03/04 www.vishay.com 1 IRF820PbF Document Number: 91059 www.vishay.com 2 IRF820PbF Document Number: 91059 www.vishay.com 3 IRF820PbF Document Number: 91059 www.vishay.com 4 IRF820PbF Document Number: 91059	Original	IRF820PbF O-220AB 12-Mar-07	PDF
SiHF820AL Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3 Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration	Original	IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3	PDF
IRF820AS Abstract: AN-994 IRF820A IRF820AL diode SS 16 Text: PD- 93774A IRF820AS IRF820AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic	Original	3774A IRF820AS IRF820AL O-262 Di52-7105 IRF820AS AN-994 IRF820A IRF820AL diode SS 16	PDF
IRF820 Abstract: irf-82 Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()	Original	IRF820 IRF82 O220AB IRF820 irf-82	PDF
Untitled Abstract: No abstract text available Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements	Original	IRF820, SiHF820 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF820A Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V	Original	IRF820A O-220 IRF820A	PDF
Untitled Abstract: No abstract text available Text: PD - 95548 IRF820SPbF • Lead-Free www.irf.com 1 7/22/04 IRF820SPbF 2 www.irf.com IRF820SPbF www.irf.com 3 IRF820SPbF 4 www.irf.com IRF820SPbF www.irf.com 5 IRF820SPbF 6 www.irf.com IRF820SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations	Original	IRF820SPbF EIA-418.	PDF
Untitled Abstract: No abstract text available Text: IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 3.0 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 17 Qgs (nC)	Original	IRF820A, SiHF820A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRF820ASPBF Abstract: No abstract text available Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-262) O-263) 12-Mar-07 IRF820ASPBF	PDF
IRFS820B Abstract: IRF820B Text: IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF820B/IRFS820B IRFS820B IRF820B	PDF
Untitled Abstract: No abstract text available Text: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)	Original	IRF820S, SiHF820S IRF820L, SiHF820L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF

IRF820S Abstract: diode Rl 257 Text: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V	Original	IRF820S IRF820S diode Rl 257	PDF
IRF820 Abstract: No abstract text available Text: IRF820 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V	OCR Scan	IRF820 IRF820	PDF
IRFB22 Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode Text: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E	OCR Scan	IRF820R, IRF821R, IRF822R, IRF823R 50V-500V IRF822FI IIRF823R sF822R, IRFB22 IRF820R IRF821R IRF822R IRF823R thermal impedance GI 312 diode	PDF
Untitled Abstract: No abstract text available Text: IRF820A Advanced Power MOSFET FEATURES B ^D S S - 500 V ♦ Avalanche Rugged Technology r\D cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 3 .0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 500V	OCR Scan	IRF820A	PDF
IRF820 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	IRF820/821 O-220 IRF820 IRF821 IRF820	PDF
N-Channel mosfet 400v 25A Abstract: IRF820S n-channel 250V power mosfet Text: IRF820S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .5 A lD = ♦ Improved Gate Charge 3 .0 Î2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 500V	OCR Scan	IRF820S N-Channel mosfet 400v 25A IRF820S n-channel 250V power mosfet	PDF
IRF820 Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid	OCR Scan	IRF820 IRF821 IRF823 Gate-SourcF821, IRF823 IRF820 IRF820, P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET R 823 motorola IRF n CHANNEL MOSFET	PDF
IRF820 Abstract: IRF820.821 IRF822 Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	IRF820/821/822/823 IRF820 IRF821 IRF822 IRF823 IRF820.821	PDF
N 821 Diode Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821 Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822	OCR Scan	IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821	PDF
1rf830 Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820 Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*	OCR Scan	IRFQ20/Q21/822/823 IRF820R/821R/822R/823R IRF820, RF821, 1RF822, IRF823 IRF820R, IRF821R, IRF822R IRF823R 1rf830 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820	PDF

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Vishay Siliconix IRF820APBF

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IRF82 Datasheets (187)

IRF82 Datasheets Context Search

IRF820PBF

Untitled

D 92 M - 02 DIODE

Untitled

SiHF820AL

IRF820AS

IRF820

Untitled

IRF820A

Untitled

Untitled

IRF820ASPBF

IRFS820B

Untitled

IRF820S

IRF820

IRFB22

Untitled

IRF820

N-Channel mosfet 400v 25A

IRF820

IRF820

N 821 Diode

1rf830