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    MOSFET 300V 10A TYPE Search Results

    MOSFET 300V 10A TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 300V 10A TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3502-01

    Abstract: No abstract text available
    Text: DATE CHECKED Apr.-02-'01 Device Name : Type Name : Spec. No. : Date : NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


    Original     		PDF 2SK3502-01MR H04-004-05 2SK3502-01MR O-220F 1x10-5 1x10-4 MS5F4981 H04-004-03 1x10-5 2SK3502-01

    Untitled

    Abstract: No abstract text available
    Text: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel


    Original     		PDF SCT2120AF O220AB R1102A

    mosfet 300V 10A

    Abstract: 300v 10 amp n-channel mosfet
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD225608 250mA SHD225608 O-254 mosfet 300V 10A 300v 10 amp n-channel mosfet

    mosfet 300v 10a

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60 VGS631) SHD239607 mosfet 300v 10a

    mos fet 120v 10A

    Abstract: No abstract text available
    Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3513-01L mos fet 120v 10A

    SMK1060

    Abstract: No abstract text available
    Text: SMK1060D2 Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code


    Original     		PDF SMK1060D2 SMK1060 KSD-T6S005-001 SMK1060

    SMK1060

    Abstract: No abstract text available
    Text: SMK1060P Semiconductor Advanced N-Ch Power MOSFET Features PIN Connection • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k in g


    Original     		PDF SMK1060P SMK1060 O-220AB-3L KSD-T0P023-000 SMK1060

    Untitled

    Abstract: No abstract text available
    Text: SMK1060FJ Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		PDF SMK1060FJ SMK1060 O-220F-3L SDB20D45 KSD-T0O069-000

    SMK1060F

    Abstract: SMK1060
    Text: SMK1060F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V Min. • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75Ω(Max.) Ordering Information Type NO.


    Original     		PDF SMK1060F SMK1060 O-220F-3L KSD-T0O030-000 SMK1060F SMK1060

    SMK1060

    Abstract: No abstract text available
    Text: SMK1060F Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code


    Original     		PDF SMK1060F SMK1060 O-220F-3L SDB20D45 KSD-T0O030-003 SMK1060

    Untitled

    Abstract: No abstract text available
    Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET 200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3513-01L

    IXTM20N60

    Abstract: SHD239607 mosfet 300V 10A type
    Text: SHD239607 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.35 Ohm MOSFET • Isolated and Hermetically Sealed • Surface Mount Package • Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60 IXTM20N60 SHD239607 mosfet 300V 10A type

    R6020ANZ

    Abstract: R6020
    Text: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.


    Original     		PDF R6020ANZ R6020ANZ R1120A R6020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD239607 TECHNICAL DATA DATA SHEET 623, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed œ Surface Mount Package œ Electrically equivalent to IXTM20N60 MAXIMUM RATINGS


    Original     		PDF SHD239607 IXTM20N60

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6010ANX O-220FM R6010ANX R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6010ANX O-220FM R6010ANX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6010ANX Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6010ANX O-220FM R6010ANX R1120A

    2SK1810

    Abstract: 2sk18
    Text: LVXS'U—X yt*7—MOSFET LVX SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK1810 F10V30 300V 10a • Æ fê S ï R A T IN G S A bsolute M axim u m R atings m Item s is S torag e Tem perature ■f-v Channel Tem perature • v —x £ Drain • Source V o lta ge


    OCR Scan     		PDF 2SK1810 F10V30) 2SK1810 2sk18

    FM15TF-9

    Abstract: JRC 062 gun diode bias symbol JRC FF 30
    Text: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A


    OCR Scan     		PDF FM15TF-9, E80276 E80271 FM15TF-9 JRC 062 gun diode bias symbol JRC FF 30

    Untitled

    Abstract: No abstract text available
    Text: ! FM20TF-1 OS I MITSUBISHI MOSFET MODULE ! MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTLINE DRAWING FM 20TF10S 90 6 1 1 6 1 1 6 13 . j> 5 . 5 16 I . * ~ T f' G j PS u PG v PS v PG w PS w P; r iÿ r tU lr ifjlr r ? & co i in ,—i CVI -GulM SuN GvNSi/NG wN SyvN 64


    OCR Scan     		PDF FM20TF-1 20TF10S FM20TF-10S

    mitsubishi MOSFET

    Abstract: FM30TF-10S fm30tf "MOSFET Module" full bridge inverter
    Text: MITSUBISHI MOSFET MODULE FM30TF-1 OS MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING Dim ensions in mm F M 3 0 T F -10 S _ 7.5 _ 2 '. 7.5 19! . ! I 1 I 28.5 I 21 _ 7.5 16. 5 , I 28.5 11 I M 2 - ip 5.5 21.5 11 / '5 3 :3 1 1 c o l § i- _ l T L+ 98


    OCR Scan     		PDF FM30TF-1 FM30TF-10S mitsubishi MOSFET FM30TF-10S fm30tf "MOSFET Module" full bridge inverter

    mosfet 20a 300v

    Abstract: S689
    Text: POWEREX m M 3=IE D INC E R E • TSTMbEl ODOMSSM 7 BI PRX JEF24502S JEF25002S X Powerex, Inc., Hillls Street, \bungwood, Pennsylvania 1569/7 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Mos FETMOD


    OCR Scan     		PDF JEF24502S JEF25002S Amperes/450-500 BP107, JEF24502S, 300VT mosfet 20a 300v S689