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    2SK18 Search Results

    2SK18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1832-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 10A 900Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK1837-E Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK1838STR-E Renesas Electronics Corporation Silicon N Channel MOSFET, LDPAK(S)-(1), /Embossed Tape Visit Renesas Electronics Corporation
    2SK1835-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1880STL-E Renesas Electronics Corporation Nch Mosfet For Switching Visit Renesas Electronics Corporation
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    2SK18 Price and Stock

    Toshiba America Electronic Components 2SK1828TE85LF

    MOSFET N-CH 20V 50MA SC59
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    DigiKey 2SK1828TE85LF Cut Tape 1,803 1
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    2SK1828TE85LF Digi-Reel 1,803 1
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    2SK1828TE85LF Reel 3,000
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    Renesas Electronics Corporation 2SK1859-E

    MOSFET N-CH 900V 6A TO3P
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    Renesas Electronics Corporation 2SK1835-E

    MOSFET N-CH 1500V 4A TO3P
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    DigiKey 2SK1835-E Tube 1
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    Avnet Americas 2SK1835-E Tube 18 Weeks 240
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    Mouser Electronics 2SK1835-E 127
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    Verical 2SK1835-E 22 3
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    Newark 2SK1835-E Bulk 31 1
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    Avnet Asia 2SK1835-E 18 Weeks 270
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    Avnet Silica 2SK1835-E 20 Weeks 30
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    Chip1Stop 2SK1835-E 46
    • 1 $18
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    2SK1835-E Tube 22
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    Toshiba America Electronic Components 2SK1829TE85LF

    MOSFET N-CH 20V 50MA SC70
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    DigiKey 2SK1829TE85LF Reel 3,000
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    2SK1829TE85LF Digi-Reel 1
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    2SK1829TE85LF Cut Tape 1
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    ComSIT USA 2SK1829TE85LF 12,000
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    onsemi 2SK1848-TB-E

    - Bulk (Alt: 2SK1848-TB-E)
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    Avnet Americas 2SK1848-TB-E Bulk 4 Weeks 2,004
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    Rochester Electronics 2SK1848-TB-E 6,000 1
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    Find more 2SK18 price and stock on Findchips.com

    2SK18 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK18 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK18 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK18 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK18 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK18 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK18 Unknown FET Data Book Scan PDF
    2SK18 Toshiba N-Channel FET, Similar to 2SK15 Scan PDF
    2SK18 Toshiba Japanese Transistor Data Book Scan PDF
    2SK180 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK180 Unknown FET Data Book Scan PDF
    2SK1803 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1803 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1803 Unknown FET Data Book Scan PDF
    2SK1804 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1804 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1804 Unknown FET Data Book Scan PDF
    2SK1805 Toshiba Original PDF
    2SK1805 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1805 Unknown FET Data Book Scan PDF
    ...

    2SK18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET REJ03G0982-0200 Previous: ADE-208-1329 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator


    Original     		PDF 2SK1862, 2SK1863 REJ03G0982-0200 ADE-208-1329) PRSS0003AD-A O-220FM) 2SK1862

    2SK1880S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK1880S O-252 2SK1880S

    2SK1828

    Abstract: No abstract text available
    Text: 2SK1828 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1828 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。


    Original     		PDF 2SK1828 O-236MOD SC-59 2SK1828

    2SJ342

    Abstract: 2SK1825
    Text: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825


    Original     		PDF 2SJ342 2SK1825 2SJ342 2SK1825

    2SJ347

    Abstract: 2SK1830
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830

    MV3000

    Abstract: RL5050 2SK1826
    Text: 2SK1826 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1826 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。


    Original     		PDF 2SK1826 SC-59 O-236MOD MV3000 RL5050 2SK1826

    2SJ345

    Abstract: 2SK1828
    Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking


    Original     		PDF 2SJ345 2SK1828 O-236MOD SC-59 2SJ345 2SK1828

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1


    Original     		PDF 2SK1880S O-252

    2SK1153

    Abstract: 2SK1154 2SK1862 2SK1863
    Text: 2SK1862, 2SK1863 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 1 1. Gate 2. Drain


    Original     		PDF 2SK1862, 2SK1863 220FM 2SK1862 2SK1153 2SK1154 2SK1862 2SK1863

    k1832

    Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
    Text: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2


    Original     		PDF 2SK1831, 2SK1832 2SK1831 sou150 k1832 K1831 2SK1157 2SK1158 2SK1831 2SK1832

    2SK1808

    Abstract: 2SK1340 DSA003639
    Text: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original     		PDF 2SK1808 ADE-208-1322 O-220FM 2SK1808 2SK1340 DSA003639

    2SK1340

    Abstract: 2SK1807 DA40
    Text: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate


    Original     		PDF 2SK1807 O-220AB 2SK1340 2SK1807 DA40

    TOP-220

    Abstract: TOP220 top 220 2SK1834 2SK183
    Text: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0


    Original     		PDF 2SK1834 SC-67 OP-220 TOP-220 TOP220 top 220 2SK1834 2SK183

    2SK1846

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 20mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.4±0.3 8.5±0.2 6.0±0.5 ● Contactless relay


    Original     		PDF 2SK1846 2SK1846

    Untitled

    Abstract: No abstract text available
    Text: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.


    OCR Scan     		PDF 2SK1891 2SK1891-applied 10//S, 51193TH AX-8377

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SK1830

    2SJ344

    Abstract: 2SK1827
    Text: TOSHIBA 2SJ344 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ344 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1827


    OCR Scan     		PDF 2SJ344 2SK1827 SC-70

    2SK1848

    Abstract: No abstract text available
    Text: O rdering num ber: E N 4 50 0 _ 2SK1848 N-Channel MOS Silicon FET No.4500 Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF EN4500 2SK1848 10/iS,

    2SK1840

    Abstract: No abstract text available
    Text: Ordering number: E N 4635 No.4635 I 2SK1840 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Features • Large I Vfs I . • Enhancement type. • Low ON resistance. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage


    OCR Scan     		PDF EN4635 2SK1840 10a/A 2SK1840

    2SK1823-01

    Abstract: DDQ3114 2sk mosfet
    Text: 2SK1823-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ . _ - _ _ _ _ _ _ FAP-IIIA SERIES • Features Outline Drawings • High cu rren t • L ow o n-resistance • N o secondary b reakd ow n


    OCR Scan     		PDF 2SK1823-01 2SK1823-01 DDQ3114 2sk mosfet

    te 1819

    Abstract: 2SK1819-01M
    Text: 2SK1819-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET • Features ■ O u tlin e Drawings • Include fast recovery diode • High voltage • Low driving power • Avalanche-proof ■ Applications Gate • M otor controllers


    OCR Scan     		PDF 2SK1819-01M SC-67 223A7T2 A2-252 te 1819

    EN4114

    Abstract: q 4114 2SK180 2SK1806 N1593 2sk18
    Text: I Òr d e rin g n u m b e r : EN 4 1 1 4 2SK1806 No.4114 N -Channel Junction Silicon FET SAiYO Low-Frequency G eneral-Purpose Amp Applications Im pedance conversion i Z f / / à JlC • . s . F e a tu re s / / / / •Low frequency am plifiers, impedance conversion, ideal for p o te n ti/r p fe te r s |a n a l^ s w itc h ^ , and


    OCR Scan     		PDF EN4114 2SK1806 EN4114 q 4114 2SK180 2SK1806 N1593 2sk18

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 829 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 2.1 ± 0.1 1.25 ± 0.1 EE- 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V 2 High Speed


    OCR Scan     		PDF 2SK1829 SC-70

    Untitled

    Abstract: No abstract text available
    Text: 2SK1817-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ T¥T - F - lll • Features r p n i r o E R o I E b Outline Drawings • High current • Low no-resistance • No secondary b reakd ow n


    OCR Scan     		PDF 2SK1817-M 1817-M