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    R6020 Price and Stock

    TAIYO YUDEN NR6020T3R3N

    FIXED IND 3.3UH 2.6A 48 MOHM SMD
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    DigiKey NR6020T3R3N Reel 47,500 2,500
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    Newark NR6020T3R3N Reel 67,500 2,500
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    TTI NR6020T3R3N Reel 5,000 2,500
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    Master Electronics NR6020T3R3N 9,710
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    TAIYO YUDEN NR6020T2R2N

    FIXED IND 2.2UH 2.7A 40.8MOHM SM
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    DigiKey NR6020T2R2N Cut Tape 2,514 1
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    Newark NR6020T2R2N Reel 90,000 2,500
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    NR6020T2R2N Cut Tape 5 1
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    Bristol Electronics NR6020T2R2N 2,713
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    TTI NR6020T2R2N Reel 5,000 2,500
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    Master Electronics NR6020T2R2N 54
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    ROHM Semiconductor R6020JNJGTL

    MOSFET N-CH 600V 20A LPTS
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    DigiKey R6020JNJGTL Cut Tape 1,787 1
    • 1 $4.71
    • 10 $3.953
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    Avnet Americas R6020JNJGTL Reel 1,000
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    Verical R6020JNJGTL 100 23
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    R6020JNJGTL 100 23
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    Newark R6020JNJGTL Cut Tape 43 1
    • 1 $3.81
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    Quest Components R6020JNJGTL 160
    • 1 $6.63
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    • 100 $4.0885
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    Avnet Silica R6020JNJGTL 26 Weeks 1,000
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    Chip1Stop R6020JNJGTL Cut Tape 6
    • 1 $3.27
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    CoreStaff Co Ltd R6020JNJGTL 100
    • 1 $6.578
    • 10 $3.618
    • 100 $2.584
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    R6020JNJGTL 100
    • 1 $6.578
    • 10 $3.618
    • 100 $2.584
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    Arlitech Electronic Corp ATNR6020220MT

    SMD POWER INDUCTORS 6020 22UH 20
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    DigiKey ATNR6020220MT Cut Tape 1,603 1
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    ROHM Semiconductor R6020FNJTL

    MOSFET N-CH 600V 20A LPT
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    DigiKey R6020FNJTL Cut Tape 958 1
    • 1 $3.72
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    Bristol Electronics R6020FNJTL 986
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    Quest Components R6020FNJTL 788
    • 1 $5.391
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    R6020FNJTL 398
    • 1 $5.166
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    • 100 $3.1857
    • 1000 $2.8413
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    Ameya Holding Limited R6020FNJTL 100 1
    • 1 $5.4404
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    • 100 $4.48033
    • 1000 $3.20024
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    CoreStaff Co Ltd R6020FNJTL 498
    • 1 $1.851
    • 10 $1.801
    • 100 $1.733
    • 1000 $1.722
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    Find more R6020 price and stock on Findchips.com

    R6020 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Type PDF
    R60200-1CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R60200-1CRQ Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R60200-3CR Cooper Bussmann Fuseholders, Circuit Protection, FUSE BLOK CART 600V 200A CHASSIS Original PDF
    R6020120CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020120EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020120FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020125FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020210FJWA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020220CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020220EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020222PSYA Powerex 200V, 220A fast recovery single diode Scan PDF
    R6020225CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225FJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020225HSYA Powerex 200V, 250A fast recovery single diode Scan PDF
    R6020235ESYA Powerex 200V, 350A fast recovery single diode Scan PDF
    R6020325CJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    R6020325EJYA Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    R6020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R6020ENX

    Abstract: No abstract text available
    Text: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6020ENX O-220FM R1102A R6020ENX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Transistors 10V Drive Nch MOSFET R6020ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020420CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.8


    Original     		PDF R6020420CJYA Current200 Voltage400 Current50m

    R6020FNJ

    Abstract: No abstract text available
    Text: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).


    Original     		PDF R6020FNJ R6020FNJ

    R6020ANZ

    Abstract: R6020
    Text: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.


    Original     		PDF R6020ANZ R6020ANZ R1120A R6020

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020725HSYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time1.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0


    Original     		PDF R6020725HSYA Current800 Voltage700 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		PDF R6020ENJ SC-83) R1102A

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		PDF R6020ANJ R0039A

    Untitled

    Abstract: No abstract text available
    Text: R6020FNX Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed.


    Original     		PDF R6020FNX O-220FM R6020FNX R1120A

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ R1102A

    R6020

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0


    Original     		PDF R6020ANZ R6020ANZ R1120A R6020

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.


    Original     		PDF R6020ANJ R0039A

    R6020ENZ

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A R6020ENZ

    R6020-ANX

    Abstract: No abstract text available
    Text: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A R6020-ANX

    Untitled

    Abstract: No abstract text available
    Text: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R6020ENZ1 O-247 R1102A

    Untitled

    Abstract: No abstract text available
    Text: R6020625CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current250 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.6


    Original     		PDF R6020625CJYA Current250 Voltage600 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020635ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5


    Original     		PDF R6020635ESYA Current800 Voltage600 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020435ESYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5


    Original     		PDF R6020435ESYA Current800 Voltage400 Current50m

    Untitled

    Abstract: No abstract text available
    Text: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6020ANX O-220FM R1120A

    Untitled

    Abstract: No abstract text available
    Text: Silicon Dual Power fRectifier S "F SI r6020 r A^ ¥ B aseplate A=Common Anode X. V Baseplate Common Cathode °-V r I -W -o Baseplate D=Doubler 601 0 0 Dim . Inch es M illim e te r M inim um M axim um M inim um _ A B C D E F G H J .875 .450 -.063 1.197


    OCR Scan     		PDF r6020