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    MOSFET 300A 400V Search Results

    MOSFET 300A 400V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 300A 400V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bridge rectifier 24V AC to 24v dc

    Abstract: 1N5408 smd diodes GSIB1560
    Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4


    Original     		PDF 250ns; DO-204AL DO-41) DO-220AA V-540V; V-440V bridge rectifier 24V AC to 24v dc 1N5408 smd diodes GSIB1560

    ZVT full bridge

    Abstract: diode bridge 8A 220V 220v 25a diode bridge DIODE T25 4 H5 switching power supply 3kw pcb ZVT full bridge for welding 3kw mosfet power supply
    Text: APTLM50H10FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 37A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply


    Original     		PDF APTLM50H10FRT 20V/240V 100kHz ZVT full bridge diode bridge 8A 220V 220v 25a diode bridge DIODE T25 4 H5 switching power supply 3kw pcb ZVT full bridge for welding 3kw mosfet power supply

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF840 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D


    Original     		PDF O-220 IRF840 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF830 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D


    Original     		PDF O-220 IRF830 O-220 Fig13

    Untitled

    Abstract: No abstract text available
    Text: SSFP9N80 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 800V Simple Drive Requirement ID25 = 7.5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP9N80 00A/s di/dt300A/S width300S;

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    IGBT MODEL BIDIRECTIONAL SW 600V 60A,ROHS

    Abstract: NTE2970
    Text: NTE2970 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Lower RDS ON Applications:


    Original     		PDF NTE2970 IGBT MODEL BIDIRECTIONAL SW 600V 60A,ROHS NTE2970

    HFS730

    Abstract: hfs7
    Text: BVDSS = 400 V RDS on typ = 0.8 Ω HFS730 ID = 5.5 A 400V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFS730 O-220F 47max 54typ HFS730 hfs7

    HFP730

    Abstract: No abstract text available
    Text: BVDSS = 400 V RDS on typ = 0.8 Ω HFP730 ID = 5.5 A 400V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFP730 O-220 54typ HFP730

    Untitled

    Abstract: No abstract text available
    Text: APTLM50HM75FRT Phase Shift Operation MOSFET Power Module VDSS = 500V RDSon = 75mΩ Ω max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • • • • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies High frequency Power Supply


    Original     		PDF APTLM50HM75FRT

    SSH22N50A

    Abstract: No abstract text available
    Text: SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 0.25 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µA (Max.) @ VDS = 500V


    Original     		PDF SSH22N50A SSH22N50A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF830 MOSFET N-Channel TO-220 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D


    Original     		PDF O-220 IRF830 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF830 MOSFET N-Channel TO-220 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D


    Original     		PDF O-220 IRF830 O-220

    IRFB830

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET N-Channel TO-263 1. G FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 2. D


    Original     		PDF O-263 IRFB830 O-263 IRFB830

    1038 MOSFET

    Abstract: No abstract text available
    Text: SSF22N50A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 500V


    OCR Scan     		PDF SSF22N50A 1038 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: SSF22N50A A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF SSF22N50A

    Untitled

    Abstract: No abstract text available
    Text: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS460

    Untitled

    Abstract: No abstract text available
    Text: IRFP460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP460

    IRFS460

    Abstract: GS 069 HF
    Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS460 IRFS460 GS 069 HF

    IRFS460

    Abstract: GS 069 HF
    Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFS460 IRFS460 GS 069 HF

    SSF22N50A

    Abstract: GS 069 HF
    Text: SSF22N50A A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF SSF22N50A SSF22N50A GS 069 HF

    500V 25A Mosfet

    Abstract: SSH22N50A
    Text: SSH22N50A A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF SSH22N50A 500V 25A Mosfet SSH22N50A

    irfp460 mosfet

    Abstract: MOSFET IRFP460 irfp460 30v IRFP460 DIODE 3d IRFP460 FAIRCHILD
    Text: IRFP460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 22 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP460 irfp460 mosfet MOSFET IRFP460 irfp460 30v IRFP460 DIODE 3d IRFP460 FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN TSM1N50 SEMICONDUCTOR 500V N-Channel Power MOSFET bl RoHS C O M P L IA N C E PRODUCT SUMMARY Pin D efinition; 1. G ate 2. Drain 3. S ou rce Vos V RüS(on){ß) 500 5.5 @ V«s =10V Id (A) 0.5 1 23 General Description The TSM1N50 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    OCR Scan     		PDF TSM1N50 TSM1N50