IRFS460 Search Results

IRFS460 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IRFS460		Fairchild Semiconductor	Advance Power MOSFET		Scan	PDF
IRFS460		Fairchild Semiconductor	Advanced Power MOSFET		Scan	PDF

IRFS460 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFS460 Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFS460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.25Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 12.4 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V	Original	PDF	IRFS460 IRFS460
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	PDF	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Untitled Abstract: No abstract text available Text: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V	OCR Scan	PDF	IRFS460
IRFS460 Abstract: GS 069 HF Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 500V	OCR Scan	PDF	IRFS460 IRFS460 GS 069 HF
IRFS460 Abstract: GS 069 HF Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 500V	OCR Scan	PDF	IRFS460 IRFS460 GS 069 HF
Untitled Abstract: No abstract text available Text: IRFS460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 500V	OCR Scan	PDF	IRFS460