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    IRFS460 Search Results

    IRFS460 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS460 Fairchild Semiconductor Advance Power MOSFET Scan PDF
    IRFS460 Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    IRFS460 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFS460

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFS460 FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.25Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 12.4 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V


    Original
    PDF IRFS460 IRFS460

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    Untitled

    Abstract: No abstract text available
    Text: IRFS460 A d van ced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 É 2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFS460

    IRFS460

    Abstract: GS 069 HF
    Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan
    PDF IRFS460 IRFS460 GS 069 HF

    IRFS460

    Abstract: GS 069 HF
    Text: IRFS460 A dvanced Power MOSFET FEATURES B V = 500 V ^D S o n = 0 .2 5 Í2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan
    PDF IRFS460 IRFS460 GS 069 HF

    Untitled

    Abstract: No abstract text available
    Text: IRFS460 Advanced Power MOSFET FEATURES B V = 500 V ^ D S o n = 0 .2 5 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 2 .4 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan
    PDF IRFS460