Untitled
Abstract: No abstract text available
Text: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097
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SQM35N30-97
AEC-Q101
O-263
SQM35N30-97-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330
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SQD10N30-330H
AEC-Q101
O-252
SQD10N30-330H-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097
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Original
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PDF
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SQM35N30-97
AEC-Q101
O-263
SQM35N30-97-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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SQM35N30-97
Abstract: No abstract text available
Text: SQM35N30-97 www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.097
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Original
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PDF
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SQM35N30-97
AEC-Q101
O-263
O-263
SQM35N30-97-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
SQM35N30-97
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Untitled
Abstract: No abstract text available
Text: SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • Package with Low Thermal Resistance 300 RDS(on) () at VGS = 10 V • AEC-Q101 Qualifiedd 0.330
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SQD10N30-330H
AEC-Q101
O-252
SQD10N30-330H-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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HF Amplifier 300w
Abstract: hf amplifier 100w mosfet HF amplifier hf class AB power amplifier mosfet 300-0130M MRF151G mrf151g date MRF151G hf amplifier mrf151g 300 GR00166
Text: HF 300-0130M 300 W HF Amplifier Designed for HF band, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 1 ÷ 30 MHz 50 Volts Input / Output 50 Ohm Pout : 300 W min Gain : 22 dB typ.
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300-0130M
MRF151G
10ANY
GR00166
HF Amplifier 300w
hf amplifier 100w
mosfet HF amplifier
hf class AB power amplifier mosfet
300-0130M
mrf151g date
MRF151G hf amplifier
mrf151g 300
GR00166
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P7NK30Z
Abstract: STD7NK30Z STF7NK30Z STP7NK30Z p7nk
Text: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω
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STD7NK30Z,
STF7NK30Z
STP7NK30Z
O-220,
O-220FP,
STD7NK30Z
O-220
O-220FP
P7NK30Z
STD7NK30Z
STF7NK30Z
STP7NK30Z
p7nk
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Untitled
Abstract: No abstract text available
Text: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω
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STD7NK30Z,
STF7NK30Z
STP7NK30Z
O-220,
O-220FP,
STD7NK30Z
O-220
O-220FP
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P7NK30Z
Abstract: No abstract text available
Text: STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω
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STD7NK30Z,
STF7NK30Z
STP7NK30Z
O-220,
O-220FP,
STP7NK30Z
STD7NK30Z
O-220FP
P7NK30Z
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300w class ab amplifier
Abstract: 300w amplifier 10-degrees 300w power amplifier
Text: IS 300-1050 Distribuited by Richardson Electronics, Ltd 300 W Amplifier Designed for industrial bands, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 10 ÷ 50 MHz 50 Volts
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DS99007-00
145mm
300w class ab amplifier
300w amplifier
10-degrees
300w power amplifier
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fdd10n20
Abstract: No abstract text available
Text: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Features Description • RDS on = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDD10N20LZ
FDD10N20LZ
fdd10n20
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Untitled
Abstract: No abstract text available
Text: FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Features Description • RDS on = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDB38N30U
50nsec
200nsec
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Untitled
Abstract: No abstract text available
Text: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 m Features Description • RDS on = 240 m (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDP15N40
FDP15N40
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Untitled
Abstract: No abstract text available
Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA59N30
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TESTO10
Abstract: No abstract text available
Text: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDPF14N30
FDPF14N30
TESTO10
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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Untitled
Abstract: No abstract text available
Text: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA38N30
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Untitled
Abstract: No abstract text available
Text: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB14N30
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Untitled
Abstract: No abstract text available
Text: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDD10N20LZ
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Untitled
Abstract: No abstract text available
Text: FDP15N40 N-Channel UniFETTM MOSFET 400 V, 15 A, 300 mΩ Features Description • RDS on = 240 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP15N40
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Untitled
Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB28N30
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FDA59N30
Abstract: No abstract text available
Text: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 m Features Description • RDS on = 56 m (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA59N30
FDA59N30
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fdb14n30
Abstract: No abstract text available
Text: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB14N30
FDB14N30
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Untitled
Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 m Features Description • RDS on = 108 m (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB28N30
FDB28N30
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