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    MOSFET 2N4351 Search Results

    MOSFET 2N4351 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2N4351 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet 2n4351

    Abstract: 2N4351
    Text: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		2N4351 2N4351 100mA mosfet 2n4351 PDF

    bare Die mosfet

    Abstract: No abstract text available
    Text: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		LS4351 2N4351 100mA bare Die mosfet PDF

    2n4351

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage


    OCR Scan     		2N4351 100mA 300ms. 2n4351 PDF

    mosfet 2n4351

    Abstract: No abstract text available
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C


    Original     		2N4351 350mW 25-year-old, mosfet 2n4351 PDF

    2N4351

    Abstract: mosfet 2n4351 X2N4351
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage


    Original     		2N4351 100mA -65oC 200oC -55oC 150oC 10sec) 300oC 300ms. DS002 2N4351 mosfet 2n4351 X2N4351 PDF

    mosfet 2n4351

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage


    OCR Scan     		2N4351 100mA 10jiA 300ms. mosfet 2n4351 PDF

    2N4351

    Abstract: mosfet 2n4351 X2N4351
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage


    Original     		2N4351 100mA -65oC 200oC -55oC 150oC 10sec) 300oC 300ms. 2N4351 mosfet 2n4351 X2N4351 PDF

    2N4351

    Abstract: mosfet 2n4351
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		2N4351 100mA 375mW 300ms. 2N4351 mosfet 2n4351 PDF

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated G 2 3 D S 1 4 C Maximum Temperatures


    Original     		2N4351 100mA 375mW 300ms. PDF

    2N4351

    Abstract: X2N4351
    Text: _l _ _ N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CQ IO O IC CO RPO RATIO N m y j M mt m *• t 2N4351 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain


    OCR Scan     		100mA 10sec) 375mW 300ms. 16M4322 2N4351 X2N4351 PDF

    2N4351

    Abstract: mosfet 2n4351 2N435
    Text: 2N4351 25 V - N-Channel Enhancement Mode MOSFET General Purpos. 1 of 2 Home Part Number: 2N4351 Online Store 2N4351 Diodes 25 Transistors V - N- C hannel Enhanc em ent M o de M O SFET Purpo s e Am plifier/ s w it c h


    Original     		2N4351 com/2n4351 2N4351 mosfet 2n4351 2N435 PDF

    2N4351

    Abstract: No abstract text available
    Text: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V


    OCR Scan     		2N4351 D01CH77 100mA 10sec) 300ms. 2N4351 PDF

    2n4351

    Abstract: mosfet 2n4351
    Text: SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- 3875081 G E SOLID STATE D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V


    OCR Scan     		D010T77 2N4351 100mA 10sec) 300ms. 2n4351 mosfet 2n4351 PDF

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


    Original     		AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET PDF

    2n4416 transistor spice

    Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		3N190 3N191 3N190 3N191 300mW 525mW 2n4416 transistor spice low noise dual P-Channel JFET P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power PDF

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice PDF

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor PDF

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice PDF

    2N4351 MOTOROLA

    Abstract: mosfet equivalent mosfet 2n4351 2N4351
    Text: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 TO-206AF Drain MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Draln-Gate Voltage Vd G 30 Vdc Gate-Source Voltage* Rating \ fj n Gate \ 4 J Cas«


    OCR Scan     		2N4351 O-206AF) 2N4351 MOTOROLA mosfet equivalent mosfet 2n4351 2N4351 PDF

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice PDF

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF