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    2N435 Search Results

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    2N435 Price and Stock

    Interconnect Devices Inc 2N4355

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    Bristol Electronics 2N4355 290 2
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    • 10 $2.912
    • 100 $2.0908
    • 1000 $1.8368
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    Motorola Mobility LLC 2N4351

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    Bristol Electronics 2N4351 139 1
    • 1 $6.272
    • 10 $4.0768
    • 100 $2.7177
    • 1000 $2.7177
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    Calogic Inc 2N4352

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    Bristol Electronics 2N4352 5
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    Quest Components 2N4352 4
    • 1 $7.5
    • 10 $5.5
    • 100 $5.5
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    NAC 2N4352 500
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    • 10000 $5.89
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    . 2N4357

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    Bristol Electronics 2N4357 3
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    Motorola Mobility LLC 2N4352

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    Bristol Electronics 2N4352 3 2
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    • 10 $4.48
    • 100 $4.48
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    Find more 2N435 price and stock on Findchips.com

    2N435 Datasheets (151)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N4350 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4350 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4350 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4350 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4350 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4350 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4350 Semitronics Silicon Power Transistors Scan PDF
    2N4351 Calogic N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Original PDF
    2N4351 Linear Integrated Systems N-channel Mosfet Enhancement Mode Original PDF
    2N4351 On Semiconductor TRANS MOSFET N-CH 25V 30A 3TO-18 Original PDF
    2N4351 Digitron MOS FET SWITCHING Scan PDF
    2N4351 General Instrument Short Form Data 1976 Short Form PDF
    2N4351 Intersil N-channel enhancement mode MOSFET general purpose amplifier/switch. Scan PDF
    2N4351 Intersil Shortform Data Book 1983/4 Short Form PDF
    2N4351 Intersil Data Book 1981 Scan PDF
    2N4351 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4351 Motorola The European Selection Data Book 1976 Scan PDF
    2N4351 Motorola European Master Selection Guide 1986 Scan PDF
    2N4351 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4358

    Abstract: No abstract text available
    Text: 2N4358 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 240V 0.41 (0.016)


    Original     		PDF 2N4358 O205AD) 10/1m 1-Aug-02 2N4358

    2N4356

    Abstract: 50no25 bjt 147 222AB
    Text: 2N4356 Si PNP Lo-Pwr BJT 5.90 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N4356 Online Store 2N4356 Diodes Si PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N4356 com/2n4356 2N4356 O-222AB 50no25 bjt 147 222AB

    mosfet 2n4351

    Abstract: No abstract text available
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C


    Original     		PDF 2N4351 350mW 25-year-old, mosfet 2n4351

    Untitled

    Abstract: No abstract text available
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated G 2 3 D S 1 4 C Maximum Temperatures


    Original     		PDF 2N4351 100mA 375mW 300ms.

    Untitled

    Abstract: No abstract text available
    Text: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V


    Original     		PDF 2N4352 2N4341 -65oC 200oC -55oC 150oC 140MHz 140kHz -10Vdc

    Untitled

    Abstract: No abstract text available
    Text: 2N4350 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.200


    Original     		PDF 2N4350 Freq300M Code3-12

    2N4352

    Abstract: 2N4341 DS005 X2N4352
    Text: P-Channel Enhancement Mode MOSFET Amplifier/Switch LLC 2N4352 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted FEATURES • • • • Low ON Resistance Low Capacitance High Gain P-Channel Complement to 2N4341 Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V


    Original     		PDF 2N4352 2N4341 -65oC 200oC -55oC 150oC 10sec) 140MHz 140kHz 2N4352 2N4341 DS005 X2N4352

    2N4351

    Abstract: mosfet 2n4351
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF 2N4351 100mA 375mW 300ms. 2N4351 mosfet 2n4351

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF 2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2N4355 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N4355 Freq100M

    2N4351

    Abstract: mosfet 2n4351 X2N4351
    Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise noted • Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage


    Original     		PDF 2N4351 100mA -65oC 200oC -55oC 150oC 10sec) 300oC 300ms. 2N4351 mosfet 2n4351 X2N4351

    2N4355

    Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
    Text: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233


    Original     		PDF 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 2N4355 KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M

    2N4351

    Abstract: mosfet 2n4351 2N435
    Text: 2N4351 25 V - N-Channel Enhancement Mode MOSFET General Purpos. 1 of 2 Home Part Number: 2N4351 Online Store 2N4351 Diodes 25 Transistors V - N- C hannel Enhanc em ent M o de M O SFET Purpo s e Am plifier/ s w it c h


    Original     		PDF 2N4351 com/2n4351 2N4351 mosfet 2n4351 2N435

    2N3644

    Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max


    OCR Scan     		PDF O-105 2N4356 2N3645 CIL296 CIL297 OL298 2N3638 2N3638A CIL591 C1L592 2N3644 2N4354 2N4355 CIL295

    GERMANIUM SMALL SIGNAL TRANSISTORS

    Abstract: AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 AU113 BSX29 sgs-ates transistors sgs-ates germanium transistor pnp
    Text: S G S -A T E S Sem iconductors Transistors - PNR/Germanium P N P High Voltage Transistors < O< 0.4 0.7 0.7 150 150 240 _ W BFW 43 BFW 44 2N4358 o CD U Code 5 > Max P t o t @ T a m b — 25 C o R E FE R E N C E T A B L E S 150 150 — (m A) Stock No. Outline


    OCR Scan     		PDF BFW43 19038e BFW44 19039c 2N4358 34787b BSX29 19080a BSX36 19084d GERMANIUM SMALL SIGNAL TRANSISTORS AD142 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS AU113 sgs-ates transistors sgs-ates germanium transistor pnp

    2N4351

    Abstract: No abstract text available
    Text: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V


    OCR Scan     		PDF 2N4351 D01CH77 100mA 10sec) 300ms. 2N4351

    2N3638

    Abstract: 2N3644 2N3645 2N3638A CIL297 2N4354 2N4355 2N4356 CIL295 CIL296
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M a x m u m P a t in g s 2N4356 V CBO V CEO V EBO (V) Min (V) Min (V) BO SO Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 5.0 45 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat)


    OCR Scan     		PDF O-105 2N4356 2N3645 CIL296 CIL297 OL298 2N3638 2N3638A CIL591 C1L592 2N3644 2N4354 2N4355 CIL295

    2n4351

    Abstract: mosfet 2n4351
    Text: SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- 3875081 G E SOLID STATE D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V


    OCR Scan     		PDF D010T77 2N4351 100mA 10sec) 300ms. 2n4351 mosfet 2n4351

    2N4351

    Abstract: X2N4351
    Text: _l _ _ N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CQ IO O IC CO RPO RATIO N m y j M mt m *• t 2N4351 ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise noted FEATURES • • • • • Low ON Resistance Low Capacitance High Gain


    OCR Scan     		PDF 100mA 10sec) 375mW 300ms. 16M4322 2N4351 X2N4351

    2n3638

    Abstract: No abstract text available
    Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)


    OCR Scan     		PDF O-105 2N4356 2N4354 2N4355 2N3644 OL298 2N3638 2N3638A CIL591 C1L592 2n3638

    2N4352

    Abstract: mosfet equivalent
    Text: MOTOROLA SC XSTRS/R F 15E D | b3b?a5»t OOabbaT 1 | 2N4352 CASE 20-03, STYLE 2 TO-72 TO-206AF MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vd s 25 Vdc Draln-Gate Voltage Vd g 30 Vdc Gate-Source Voltage VGS ±30 Vdc Rating Drain Current •d 30


    OCR Scan     		PDF 2N4352 O-206AF) T-37-J5 2N4352 mosfet equivalent

    2N4351 MOTOROLA

    Abstract: mosfet equivalent mosfet 2n4351 2N4351
    Text: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 TO-206AF Drain MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vos 25 Vdc Draln-Gate Voltage Vd G 30 Vdc Gate-Source Voltage* Rating \ fj n Gate \ 4 J Cas«


    OCR Scan     		PDF 2N4351 O-206AF) 2N4351 MOTOROLA mosfet equivalent mosfet 2n4351 2N4351

    2N4355

    Abstract: 2n4356 2N4354 MPS4355 MPS4354 2N4355+equivalent MPS4355 transistor MPS4356 T0-105 60-80V
    Text: MPS4354 MPS4355 MPS4356 2N4351» 2N4355 2N4356 certtfifi Sem iconductor Corp. Central sem iconductor Corp. ♦I JEDEC T O - 1 0 5 JEDEC T0-92 EBC SILICON PNP TRANSISTORS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N^35Z*, MPS4354 series types are Silicon PNP Small Signal T ra n s ­


    OCR Scan     		PDF 2N4354 MPS4354 2N4355 MPS4355 2N4356 MPSA356 O-105 2N4354, 2N4354 2N4355+equivalent MPS4355 transistor MPS4356 T0-105 60-80V

    2N4351 equivalent

    Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
    Text: D IG ^ R M ^ ELEC T R O N IC • gps COR 42E D ■ Bfl42L,0? OODCJOEO 5 1 1 ■ DGE/ - J / ' - ì r 1 9 9 1 HIGHWAY 2 8 W E S T BOUND BROO K, N E W J E R S E Y 0 8 8 0 5 k r 2N4351 TO-72 i»w ifc*S <t y u ? MN t 1 « jauPirc 0«tl OftAIN lUISflAtC «NO CASEUAO


    OCR Scan     		PDF 2fl42L 2N4351 Cdfsubl10 2N4351 equivalent 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42