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    MOSFET 10063 Search Results

    MOSFET 10063 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10063 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PVY117

    Abstract: PVY117-T
    Text: Data Sheet No. PD 10063 Series PVY117 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 PVY117-T PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD 10063 revA Series PVY117 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 PDF

    PVY117

    Abstract: PVY117-T
    Text: Data Sheet No. PD 10063 revB Series PVY117 & PbF Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 frequencY117 PVY117-T PDF

    PVY117

    Abstract: PVY117-T
    Text: Data Sheet No. PD 10063 revC Series PVY117 & PbF Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 frequencVY117 PVY117-T PDF

    PVY117

    Abstract: PVY117-T
    Text: Not Recommended for new designs Data Sheet No. PD 10063 revD Series PVY117 & PbF Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 sVY117 PVY117-T PDF

    PVY117

    Abstract: PVY117-T PVY1
    Text: This part is now OBSOLETE 1/22/2009 Not Recommended for new designs Data Sheet No. PD 10063 revE Series PVY117 & PbF Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 470mA General Description The PVY117 Series Photovoltaic Relay is a singlepole, normally-open solid-state relay that can replace


    Original     		PVY117 470mA PVY117 FVY117 PVY117-T PVY1 PDF

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC PDF

    12c5a

    Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.


    Original     		NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC PDF

    GL 7812

    Abstract: ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812
    Text: PRELIMINARY DATA SHEET 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +24.5 dBm TYP at VDS = 3 V 1.5 ± 0.2 4.2 Max


    Original     		NE552R479A GL 7812 ta 8264 NE55xx 7564 ROHM 7818 voltage ATC 2603 LDMOS NEC NEC 7812 PDF

    2052-5636-02 100pf

    Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION


    Original     		NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS PDF

    NEC 718

    Abstract: LDMOS NEC
    Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz


    Original     		NE5520379A 24-Hour NEC 718 LDMOS NEC PDF

    4069 NOT GATE IC

    Abstract: NEC LDMOS
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS PDF

    J50 mosfet

    Abstract: LDMOS NEC
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC PDF

    J50 mosfet

    Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec
    Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz


    Original     		NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec PDF

    LDMOS NEC

    Abstract: No abstract text available
    Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ������������� ����


    Original     		NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC PDF

    tektronix 576 curve tracer

    Abstract: 10063 mosfet 4b application circuits of IRF330 drive motor 10A with transistor P channel MOSFET AN-558 C1995 IRF330 IRF450 n mosfet depletion
    Text: INTRODUCTION The high voltage power MOSFETs that are available today are N-channel enhancement-mode double diffused MetalOxide-Silicon Field Effect Transistors They perform the same function as NPN bipolar junction transistors except the former are voltage controlled in contrast to the current


    Original     		PDF

    10063

    Abstract: siemens MOSFET 14 mosfet 10063 AN-558 IRF330 IRF450 siemens mosfet TI mosfet RRD-B30M115 10063
    Text: ெࡔࡔॆӷ‫ິࠅ༹ڞ‬ ᆌᆩጀ๥558 RalphLocher 1988౎12ሆ ᆅჾ āāణമ၄๳‫ߛڦ‬უࠀ୲MOSFET๟ᅃዖN-ࠏ‫ڢ‬Ăሺഽ႙Ă ມકොĂূຌᄟࣅࡂ‫ׇ‬ၳᆌৗ༹࠶ă໲்ࢅNPNມट႙ৗ༹ ࠶ਏᆶ၎ཞ‫ీࠀڦ‬Lj‫ڍ‬മኁ๟֑ᆩ‫ۉ‬უ੦዆‫ڦ‬ഗॲLjܸࢫኁ


    Original     		TL/G/10063 AN-558 TL/G/10063 RRD-B30M115/Printed CSP-9-111C2 10063 siemens MOSFET 14 mosfet 10063 AN-558 IRF330 IRF450 siemens mosfet TI mosfet RRD-B30M115 10063 PDF

    Untitled

    Abstract: No abstract text available
    Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options


    Original     		OT223/SOT89 2N7002* PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008 PDF

    Aromat relay lr42758

    Abstract: lr26550 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet lr44444 Aromat lR44444 relays E43149
    Text: Panasonic Electric Works Corp. of America 629 Central Avenue, New Providence, NJ 07974-1526 Tel: 908 464-3550 Standards Chart Standards Chart Mechanical Relays Item SX (ASX) UL/C-UL (Recognized) CSA (Certified) File No. Contact rating File No. Contact rating


    Original     		LR26550 E43149 E43149 Aromat relay lr42758 lr26550 LR42758 Aromat lr26550 LR68004 Aromat lr44444 Aromat lr26550 datasheet lr44444 Aromat lR44444 relays PDF

    BS170V

    Abstract: to-92 mosfet
    Text: Mutt LEAD MOUNTED TRANSISTORS PNP TRAN SISTORS - EUROPEAN TYPES / TO-92 'y Type ^CÉÛ Number œ ;a w Volts EHU = C0B@VC8 r^NS-V-L:':. i :i- • V/mA max.V mA/mA max.nA V/mA max.pF V BC327 45 100-630 1/100 .07 500/50 100 45 100 5/10 typ-12 10 BC327-16 45 100-250


    OCR Scan     		typ-12 BC327 BC327-16 BC327-25 BC327-40 BC557A BC557B BC557C BS170V to-92 mosfet PDF

    MPSA08

    Abstract: No abstract text available
    Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number VCEO Volts hfE @ ^ ce/Ic V/mA Cqb @ Vcb max pF V Pin Diagram See Page 45 V/mA 4.0 5 10 — 20/10 — — 10 10 Fig. 1 Fig. 3 Fig. 1 20/20 20/10 10/20 8.0 10 5 5 Fig. 1 Fig. 1 Fig. 1 50/5 300 — 5/1


    OCR Scan     		Transistors/TO-92 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 PSA08/ITTA06 2N5551 MPSA08 PDF

    2N6782

    Abstract: c0366 diode sv 0367
    Text: □1 E SOLID STATE DE I 3 fi7 S □ fl1 Q01Û 4DÔ fi f - — - Z aianaarcfl'ower M O S F E T s 2N6782 File Number 1592 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		2N6782 2N6782 1A41E c0366 diode sv 0367 PDF

    SBMT2222A

    Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
    Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)


    OCR Scan     		100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A PDF