AN569
Abstract: MTW10N100E
Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW10N100E
r14525
MTW10N100E/D
AN569
MTW10N100E
|
PDF
|
adc 0808 internal circuit diagram
Abstract: TB-547 AN569 MTW6N100E MTW6N100
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW6N100E
r14525
MTW6N100E/D
adc 0808 internal circuit diagram
TB-547
AN569
MTW6N100E
MTW6N100
|
PDF
|
AN569
Abstract: MTW10N100E
Text: MTW10N100E Preferred Device Power MOSFET 10 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW10N100E
O-247
r14525
MTW10N100E/D
AN569
MTW10N100E
|
PDF
|
adc 0808 internal circuit diagram
Abstract: No abstract text available
Text: MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW6N100E
O-247
MTW6N100E/D
adc 0808 internal circuit diagram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000
|
Original
|
5N100
5N100A
O-204
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
|
PDF
|
5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
|
OCR Scan
|
N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
|
PDF
|
IXTH5N100A
Abstract: gs 1117 ax
Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000
|
OCR Scan
|
5N100
5N100A
to150
O-247
O-204
O-204
O-247
IXTH5N100
IXTM5N100
IXTH5N100A
gs 1117 ax
|
PDF
|
24N100
Abstract: 23N10 125OC
Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
24N100
23N100
24N100
23N100
OT-227
E153432
125oC
23N10
125OC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM
|
Original
|
01N100
100mA
O-251
728B1
|
PDF
|
MTC3N100E
Abstract: SHD218414 SHD218414A SHD218414B
Text: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
MTC3N100E
SHD218414
SHD218414A
SHD218414B
|
PDF
|
01n100
Abstract: 4506v iXTY01N100
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20
|
Original
|
01N100
100mA
728B1
01n100
4506v
iXTY01N100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20
|
Original
|
01N100
01N100
100mA
O-251
O-252
405B2
|
PDF
|
1N100
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM
|
Original
|
1N100
O-263
O-220AB
1N100
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM
|
Original
|
1N100
O-263
O-220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
|
Original
|
SHD218414
SHD218414A
SHD218414B
MTC3N100E
|
PDF
|
IRFAG50
Abstract: SHD218508 SHD218508A SHD218508B shd2188
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching
|
Original
|
SHD218508
SHD218508A
SHD218508B
SHD2188/A/B
IRFAG50
IRFAG50
SHD218508
SHD218508A
SHD218508B
shd2188
|
PDF
|
shd2188
Abstract: sensitron
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
|
Original
|
SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
shd2188
sensitron
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
|
Original
|
SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000
|
Original
|
IXFL44N100P
300ns
44N100P
9-20-07-C
|
PDF
|
IXFX32N100P
Abstract: ixfk32n100p PLUS247
Text: PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V
|
Original
|
IXFK32N100P
IXFX32N100P
300ns
O-264
32N100P
3-28-08-C
IXFX32N100P
ixfk32n100p
PLUS247
|
PDF
|
527 39a
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
|
Original
|
SHD226408
O-257
250mA
SHD226408
527 39a
|
PDF
|
1000 volt mosfet
Abstract: shd226801
Text: SENSITRON SEMICONDUCTOR SHD226801 TECHNICAL DATA DATA SHEET 4341, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 4 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
|
Original
|
SHD226801
O-257
1000 volt mosfet
shd226801
|
PDF
|
