MOSFET,P,D PACKAGE Search Results

MOSFET,P,D PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance
XPH2R106NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF)
XPH3R206NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF)
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H
TPH4R008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N)

MOSFET,P,D PACKAGE Price and Stock

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Panduit Corp P10-38R-D Ring Terminal, 14 – 10 AWG, 3/8" stud size, non-insulated, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	P10-38R-D		3,503			1 - 10 - 100 - 1000 $0.3111 10000 $0.2888	Buy Now
Panduit Corp PS12-D Parallel Splice, non-insulated, 14 – 12 AWG, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PS12-D		2,650			1 - 10 - 100 - 1000 $0.252 10000 $0.2351	Buy Now
Panduit Corp PSN12-D Parallel Splice, 14 – 12 AWG, nylon insulated, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PSN12-D		2,010			1 - 10 - 100 - 1000 $0.373 10000 $0.336	Buy Now
Panduit Corp ACC62-A-D Adhesive backed cord clip, .62" (15.8mm) bundle, natural, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	ACC62-A-D		2,007			1 - 10 - 100 - 1000 $0.814 10000 $0.633	Buy Now
Panduit Corp PV10-14F-D Fork Terminal, vinyl insulated, funnel entry, 14- 10 AWG, 1/4 stud size, bulk package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	PV10-14F-D		1,507			1 - 10 - 100 - 1000 $0.37 10000 $0.334	Buy Now

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MOSFET,P,D PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Diode SMD ED 9a Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp Text: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier	Original	IRLMS6702 Diode SMD ED 9a RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp	PDF
Untitled Abstract: No abstract text available Text: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q	OCR Scan	IRF7606	PDF
IRF7319 Abstract: 49AA Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch	OCR Scan	IRF7319 IRF7319 49AA	PDF
6x marking sot-23 p-channel Abstract: IRLMS4502 IRLMS6702 Text: PD- 93759A IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 2 5 3 4 A D VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier	Original	3759A IRLMS4502 OT-23. boaS4502 6x marking sot-23 p-channel IRLMS4502 IRLMS6702	PDF
irlms4502 Abstract: No abstract text available Text: PD- 93759 IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω T o p V ie w Description These P-Channel MOSFETs from International Rectifier	Original	IRLMS4502 OT-23. irlms4502	PDF
Untitled Abstract: No abstract text available Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)	OCR Scan	Si9407AEY S-57253â 24-Feb-98 S2SM735 DD17flflT	PDF
marking code FFD Abstract: IRF7604 Text: P D -9 .1 2 6 3 D International IQR Rectifier IRF7604 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss = -20V	OCR Scan	IRF7604 sEIA-481 EIA-541. marking code FFD IRF7604	PDF
40842 Abstract: SUM110P06-07L sum110p06-07l-e3 Text: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.0069 @ VGS = −10 V −110 0.0088 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS	Original	SUM110P06-07L O-263 SUM110P06-07L--E3 S-40842--Rev. 03-May-04 40842 SUM110P06-07L sum110p06-07l-e3	PDF
Untitled Abstract: No abstract text available Text: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology	OCR Scan	IRF7322D1	PDF
ir*526 Abstract: smd diode schottky code marking 2F Text: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode	OCR Scan	IRF7526D1 Rf7526d1 ir*526 smd diode schottky code marking 2F	PDF
S 0240 Abstract: No abstract text available Text: PAIRCHII-D November 1998 M IC D N D U C T Q R ! FDN340P Single P-Channel 2.5V Specified Pow erTrench MOSFET Features General D escription This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	OCR Scan	FDN340P S 0240	PDF
Si7485DP Abstract: Si7485DP-T1 Text: Si7485DP Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0073 @ VGS = - 4.5 V - 20 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.0090 @ VGS = - 2.5 V	Original	Si7485DP 07-mm Si7485DP-T1 S-31416--Rev. 07-Jul-03	PDF
40411 transistor Abstract: 40411 transistor 40411 Si7461DP Text: Si7461DP Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0145 @ VGS = −10 V −14.4 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.019 @ VGS = −4.5 V	Original	Si7461DP 07-mm Si7461DP-T1--E3 S-40411--Rev. 15-Mar-04 40411 transistor 40411 transistor 40411	PDF
Si7923DN Abstract: No abstract text available Text: Si7923DN New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.047 @ VGS = −10 V −6.4 0.075 @ VGS = −4.5 V −5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	Si7923DN Si7923DN-T1--E3 S-51129--Rev. 13-Jun-05	PDF

Si7991DP Abstract: Si7991DP-T1 Text: Si7991DP Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.023 @ VGS = −10 V −10.2 0.035 @ VGS = −4.5 V −8.1 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package	Original	Si7991DP 07-mm Si7991DP-T1 S-32127--Rev. 27-Oct-03	PDF
03712 Abstract: Si7705DN Text: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile	Original	Si7705DN 07-mm S-03712--Rev. 14-May-01 03712	PDF
list of P channel power mosfet Abstract: si4563 SI4563DY Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested	Original	Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563	PDF
SC-89 Abstract: Si1039X S0476 Text: Si1039X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) –12 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.165 @ VGS = –4.5 V	Original	Si1039X SC-89 S-04765--Rev. 08-Oct-01 SC-89 S0476	PDF
SC-89 Abstract: Si1037X MARKING CODE N Text: Si1037X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) –20 TrenchFETr Power MOSFET Low Threshold Smallest LITTLE FOOTr Package: 1.6 mm x 1.6 mm Low 0.6-mm Profile rDS(on) (W) ID (A) 0.195 @ VGS = –4.5 V	Original	Si1037X SC-89 S-04766--Rev. 08-Oct-01 SC-89 MARKING CODE N	PDF
MS-012AA Abstract: Si4435DY Text: PD- 93768A Si4435DY HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from	Original	3768A Si4435DY MS-012AA	PDF
P-channel power mosfet irf Abstract: IRF5800 Text: PD - 93850 IRF5800 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier	Original	IRF5800 OT-23. P-channel power mosfet irf IRF5800	PDF
IRF4435 Abstract: IR*435 MS-012AA Text: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from	Original	IRF4435 IRF4435 IR*435 MS-012AA	PDF
mosfet Abstract: EIA-541 IRLMS4502 IRLMS6702 Text: PD- 93759B IRLMS4502 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 3 4 VDSS = -12V D G D S RDS on = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier	Original	93759B IRLMS4502 OT-23. mosfet EIA-541 IRLMS4502 IRLMS6702	PDF
IRLMS 4502 D Abstract: EIA-541 IRLMS6802 P-Channel mosfet 400v 400v p-channel mosfet integral 4502 Text: PD- 91848E IRLMS6802 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D A D 1 6 2 5 D 3 4 S VDSS = -20V D G RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier	Original	91848E IRLMS6802 OT-23. IRLMS 4502 D EIA-541 IRLMS6802 P-Channel mosfet 400v 400v p-channel mosfet integral 4502	PDF

MOSFET,P,D PACKAGE Search Results

MOSFET,P,D PACKAGE Result Highlights (5)

MOSFET,P,D PACKAGE Price and Stock

Panduit Corp P10-38R-D

Panduit Corp PS12-D

Panduit Corp PSN12-D

Panduit Corp ACC62-A-D

Panduit Corp PV10-14F-D

MOSFET,P,D PACKAGE Datasheets Context Search

Diode SMD ED 9a

Untitled

IRF7319

6x marking sot-23 p-channel

irlms4502

Untitled

marking code FFD

40842

Untitled

ir*526

S 0240

Si7485DP

40411 transistor

Si7923DN

Si7991DP

03712

list of P channel power mosfet

SC-89

SC-89

MS-012AA

P-channel power mosfet irf

IRF4435

mosfet

IRLMS 4502 D