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    MOBIL IC CODE Search Results

    MOBIL IC CODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    MOBIL IC CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA1305 equivalent

    Abstract: Dream SAM97XX IC 4804 reverb Processor IC SAM9755 TDA1311 MIDI Dream MOBIL 33 dream sam
    Text: SAM9755 Mobil Phone Synthesizer OVERVIEW The SAM9755 integrates into a single chip a SAM97xx core 64 slots DSP + 16bit processor , a 32k x 16 RAM and glue logic. With addition of an external ROM or FLASH and a stereo DAC, a complete MIDI sound unit can be built, including reverb


    Original     		PDF SAM9755 SAM9755 SAM97xx 16bit 28MHz 16Mega TDA1305 equivalent Dream IC 4804 reverb Processor IC TDA1311 MIDI Dream MOBIL 33 dream sam

    Untitled

    Abstract: No abstract text available
    Text: SG572 I2C Frequency Clock Generator w/ EMI Reduction SST for Mobil Applications. Preliminary PRODUCT FEATURES S S S S S S S S S S S S S FREQUENCY TABLE Supports Pentium & Pentium® II CPUs. 2 CPU and 2 AGP clocks. 6 SDRAM clocks for 3 Mobil SO DIMMs. Power Management hardware support.


    Original     		PDF SG572 IMISG572AYB SG572AYB IMISG572AYB

    opb 3902

    Abstract: esis power ups RCA Solid State amplifier TETRA TETRA radio HT-200R RCA SOLID STATE sds ts2 TETRA monitoring audi mmi
    Text: 3900 Series Digital Radio Test Set TETRA Option Manual 1002-4401-3P0 Issue-8 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign


    Original     		PDF 1002-4401-3P0 syst91] 1002-4401-3P0* opb 3902 esis power ups RCA Solid State amplifier TETRA TETRA radio HT-200R RCA SOLID STATE sds ts2 TETRA monitoring audi mmi

    RFID Entry Door Lock Access Control System

    Abstract: TRELLEBORG TIRIS glass Transponder how to make ic copier Automatic Railway Gate Control system, ULTRASONIC parking system Car security system seminar RFID Proximity Entry Door Lock Access Control System Automated Guided Vehicles NISSAN
    Text: INTERNATIONAL NEWSLETTER OF THE TI RFID GROUP ISSUE NO. 20, 2000 Baggage Direct –Uses Tag-it The World’s First RFID-based Baggage Delivery System aggage Direct took off at Heathrow Airport on July 27th. Developed by systems integrator KTP Ltd using Texas


    Original     		PDF 56MHz RFID Entry Door Lock Access Control System TRELLEBORG TIRIS glass Transponder how to make ic copier Automatic Railway Gate Control system, ULTRASONIC parking system Car security system seminar RFID Proximity Entry Door Lock Access Control System Automated Guided Vehicles NISSAN

    Untitled

    Abstract: No abstract text available
    Text: BFR193L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain amplifiers up to 2 GHz 3  For linear broadband amplifiers  fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR193L3

    ua 722 fc

    Abstract: BCR847BF MARKING rks BFR94
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F ua 722 fc BCR847BF MARKING rks BFR94

    BFR340T

    Abstract: No abstract text available
    Text: BFR340T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  Transition frequency of 14 GHz  High insertion gain 2  Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T VPS05996 BFR340T

    Untitled

    Abstract: No abstract text available
    Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR183F

    E 94733

    Abstract: marking p1S E 94733 3
    Text: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR92W BFT92W OT323 E 94733 marking p1S E 94733 3

    infineon marking code L2

    Abstract: No abstract text available
    Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340T infineon marking code L2

    BFP420F

    Abstract: BFP520F
    Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability


    Original     		PDF BFP520F BFP420F BFP520F

    BFP183W

    Abstract: BGA420 marking rhs
    Text: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP183W OT343 BFP183W BGA420 marking rhs

    DIN 6784 c1

    Abstract: BCR108T BFR380T E6327 SC75
    Text: BFR380T NPN Silicon RF Transistor 3 Preliminary data  High current capability and low figure for wide dynamic range application  Low voltage operation 2  Ideal for low phase noise oscillators up to 3.5 GHz 1  Low noise figure: 1.1 dB at 1.8 GHz VPS05996


    Original     		PDF BFR380T VPS05996 DIN 6784 c1 BCR108T BFR380T E6327 SC75

    marking FA

    Abstract: No abstract text available
    Text: BFR340L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  Transition frequency of 14 GHz  High insertion gain 1  Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR340L3 marking FA

    transistor marking RHs

    Abstract: transitor RF 98 BFR183F
    Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183F transistor marking RHs transitor RF 98 BFR183F

    BCR108T

    Abstract: BFR183T SC75
    Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T BCR108T BFR183T SC75

    BCR108T

    Abstract: BFR182T SC75
    Text: BFR182T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182T BCR108T BFR182T SC75

    BCR108W

    Abstract: BFR182W
    Text: BFR182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR182W OT323 BCR108W BFR182W

    BFP181R

    Abstract: marking code RFs
    Text: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP181R OT143R BFP181R marking code RFs

    BFP193W

    Abstract: BGA420
    Text: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFP193W OT343 BFP193W BGA420

    BFP196

    Abstract: BFP181 transistor bfp196
    Text: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz


    Original     		PDF BFP196 OT143 BFP196 BFP181 transistor bfp196

    828 npn

    Abstract: BCR108W BFR193W
    Text: BFR193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193W OT323 828 npn BCR108W BFR193W

    C4814

    Abstract: No abstract text available
    Text: C4814 Low EM I Clock Generator with f C for M obil Pentium System Boards A p p ro ve d P roduct PRODUCT FEA TURES FREQU ENCYSELECTUON TABLE CPU • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock


    OCR Scan     		PDF C4814 48-pin C4814EYB IMIC4814EYB C4814

    Untitled

    Abstract: No abstract text available
    Text: ËÊÊË •ir « ^ C4814 mm « Low EMI Clock Generator with f C for Mobil Pentium System Boards Approved Product PRODUCT FEA TURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock Up to 8 SDRAM clocks for 4 mobile SO DIMMs.


    OCR Scan     		PDF C4814 C4814EYB IMIC4814EYB