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    MO CHIP TRANSISTOR Search Results

    MO CHIP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MO CHIP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELECTRONIC circuit diagram of digital hearing aid

    Abstract: IL2533D automatic lift control system for energy saving circuit diagram of digital hearing aid IL2533 IL2533N VD10 circuit diagram of hearing aid hearing aid chip Lift Controller Circuit
    Text: IL2533N, IL2533D IL2533N, IL2533D Multistandard CMOS IC of single chip phone with double soft limitation LS MFL RO VDD AGND STB CI MO LLC HS/DP OSC MODE C4 C3 01 28 02 27 03 26 04 25 05 24 06 23 07 22 08 21 09 20 10 19 11 18 12 17 13 16 14 15 RI LI VSS CS


    Original     		PDF IL2533N, IL2533D IL2533D 28pin MS-013AE. IL2533N 28pin MS011AB. ELECTRONIC circuit diagram of digital hearing aid automatic lift control system for energy saving circuit diagram of digital hearing aid IL2533 VD10 circuit diagram of hearing aid hearing aid chip Lift Controller Circuit

    BT8032

    Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803
    Text: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor


    Original     		PDF BT8032 16-pin BT8032 transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803

    BT8040N

    Abstract: Melody Generator BT8032 BT8040 MO chip Transistor
    Text: TECHNICAL DATA BT8040N Melody Generator with Accompaniment FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor


    Original     		PDF BT8040N 16-pin BT8040 BT8032 BT8040 001BB) BT8040N Melody Generator BT8032 MO chip Transistor

    feature of ic UM 66

    Abstract: siemens SH100 SH100 ck SH100G IC UM 66 APD 10ghz APD -25dbm 10ghz CPGA APD Arrays SH100
    Text: Custom ICs B6HF - Bipolar Technology for all HF Applications • 6 inch wafers • 17 mask layers max. • 3 layer metallization: TiN/AlSiCu/TiN sandwich with thungsten plugs • 0.4 micron minimum effective emitter width • Double poly selfaligned emitter/base complex:


    Original     		PDF 25GHz, 10GHz, feature of ic UM 66 siemens SH100 SH100 ck SH100G IC UM 66 APD 10ghz APD -25dbm 10ghz CPGA APD Arrays SH100

    ding dong

    Abstract: MO chip Transistor bt8031 melody ding dong Elise BT8031-XX BT803
    Text: TECHNICAL DATA BT8031-XX FEATURES FUNCTIONS • 127-note ROM memory • 2.0V to 5.0V power supply and low power consumption • RC oscillator on chip • One shot or level hold mode mask option • Sound range: 2.5 octaves, 2 series • Tempo: 16 kinds (presto-largo)


    Original     		PDF BT8031-XX 127-note BT8031-XX 001BA) ding dong MO chip Transistor bt8031 melody ding dong Elise BT803

    ding dong

    Abstract: MO chip Transistor Elise F r Elise KK8031-XX 127-note
    Text: TECHNICAL DATA KK8031-XX FEATURES FUNCTIONS • 127-note ROM memory • 2.0V to 5.0V power supply and low power consumption • RC oscillator on chip • One shot or level hold mode mask option • Sound range: 2.5 octaves, 2 series • Tempo: 16 kinds (presto-largo)


    Original     		PDF KK8031-XX 127-note KK8031-XX 001BA) ding dong MO chip Transistor Elise F r Elise

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10

    2C2907AHV

    Abstract: m21 transistor
    Text: MOTOROW Order this dooument by 2C2W7AHVID SEMICONDUCTORTECHNICALDATA @ 2C2907AHV Chip PNP Silicon Smal14ignal Transistor .11 ~+ “~ [ . . designed for dc to VHF amplifier and generaburpose witching applications. Technaloglw Opl muon MMIMUM RATINGS Value symbol


    Original     		PDF 2C2907AHV Smal14ignal 2C2907AHVID 1PHX24101 m21 transistor

    AgCu28

    Abstract: No abstract text available
    Text: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors


    Original     		PDF SC-74 OT457 representiveSOT23 FeNi42 SnPb20 AgCu28

    PJ41

    Abstract: CBA112 diode SKN 100 1P40 HD68POIMO-I Y22V
    Text: H D68P01V07, H D68P01V07-1 HD68P01 MO ,HD68P01 MO-1 IVI O U M icrocom pu ter Unit The HD68P01 is an 8-bit single chip microcomputer unit (M C U ) which significantly enhances the capabilities o f the HM CS6800 family o f parts. It can be used in production sys­


    OCR Scan     		PDF D68P01V07, D68P01V07-1 HD68P01 HMCS6800 HD680I HD6800 PJ41 CBA112 diode SKN 100 1P40 HD68POIMO-I Y22V

    K777 EQUIVALENT

    Abstract: K777
    Text: Optical disc ICs 3-phase motor driver BA6840BFS/BA6840BFP-Y/BA6840BFP/ BA6842BFS The BA6840BFS, BA6840BFP-Y, BA6840BFP, and BA6842BFS are one-chip ICs designed for driving CD-ROM mo­ tors. They are high performance-ICs with a 3-phase, full-wave, pseudo-linear drive system.


    OCR Scan     		PDF BA6840BFS/BA6840BFP-Y/BA6840BFP/ BA6842BFS BA6840BFS, BA6840BFP-Y, BA6840BFP, BA6842BFS BA6840BFS/B A6840BFP-Y /BA6840BFP/BA6842BFS BA6840BFS. K777 EQUIVALENT K777

    RTS58

    Abstract: 002E4
    Text: MITSUBISHI M ICRO CO M PUTERS 3800 Group SING LE-CHIP 8-BIT CM O S M IC R O C O M P U T E R FEATURES DESCRIPTION The 3800 group is the 8-bit microcomputer based on the Basic machine-language instructions. 71 MO family core technology.


    OCR Scan     		PDF

    HD68P01V05

    Abstract: 68P01M HD68PO1MO HD68P01M HD14053B HD68P01 HN462716 hd68p01v07 hd68po1 hd14053
    Text: HD68P01 S0,HD68P01 V05, HD68P01 V07,HD68P01 MO M C U M icro co m p u ter Unit The HD68P01 is an 8-bit single chip microcomputer unit (MCU) which significantly enhances the capabilities of the HMCS6800 family of parts. It can be used in production sys­ tems to allow for easy firmware changes with minimum delay or


    OCR Scan     		PDF HD68P01 HMCS6800 HD6801 HD6800 HD68P01V05 68P01M HD68PO1MO HD68P01M HD14053B HN462716 hd68p01v07 hd68po1 hd14053

    M37733EHBFP

    Abstract: ded 7516
    Text: MITSUBISHI MICROCOMPUTERS M37733EHBXXXFP M37733EHBFS MO*0 a«»10 So«'eV P R O M V E R S IO N O F M 3 7 7 3 3 M H B X X X F P DESCRIPTION •S in g le power s u p p ly . 5 V - 10% The M 37733EHBXXXFP is a single-chip m icrocom puter using the


    OCR Scan     		PDF M37733EHBXXXFP M37733EHBFS 16-bit 10-bit M37733EHBFP ded 7516

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR MRF1015MA MRF1015MB TECHNICAL DATA The RF Line 16 W R E A K 9 6 0 -1 2 1 6 MHz MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS . . designed for C la s s B and C com m on b a se am p lifier applications in short and long p ulse TA C A N , IFF, D M E, and radar tran sm itte rs.


    OCR Scan     		PDF MRF1015MA MRF1015MB 1015M MRF1015MA,

    capacitor 10mf 16v

    Abstract: capacitor 10MF
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3009 TP3009S The RF Line UHF Power Transistors 0.75 W — 900 HMz UHF POW ER T R A N SIS T O R S NPN SILICO N The TP3009/S is designed for 12.5 V, 900 MHz common-emitter amplifier operating in the 820-960 M Hz frequency region.


    OCR Scan     		PDF TP3009 TP3009S TP3009/S L-20m L-28m capacitor 10mf 16v capacitor 10MF

    "sense amplifier" voltage control current precharge memory

    Abstract: No abstract text available
    Text: Application 2. Dynamic RAM DRAM 2.1 Features of DRAM DRAM has a simple two-element memory structure, consisting o f a single transistor and a single capacitor. Due to this feature, DRAM is suitable for a higher degree of chip integration and can implement low-price


    OCR Scan     		PDF 25MHz) 40MHz) 15nsi 66MHz) "sense amplifier" voltage control current precharge memory

    2N2586

    Abstract: transistor KC 2
    Text: TYPE 2N2S86 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 5 2 9 8 7 , A U G U S T 1 9 6 2 - R E V I S E D S E P T E M B E R 1 9 6 5 FO R E X T R E M E L Y L O W -L E V E L , LOW -N O ISE, A M P L IF IE R A P P LIC A T IO N S • Guaranteed Very-Low-Current hp E •• ■80 min at 1 ¿uA


    OCR Scan     		PDF 2N2S86 2N2586 transistor KC 2

    2N911

    Abstract: 2N910 2N912 6/18/2N911
    Text: TYPES 2N910, 2N911, 2N912. 2N1973. 2N1S74, 2N1975 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 5 6 1 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 HIGHLY RELIABLE, VERSATILE DEVICES CHARACTERIZED ESPECIALLY FOR SMALL-SIGNAL APPLICATIONS


    OCR Scan     		PDF 2N910, 2N911, 2N912. 2N1973. 2N1S74, 2N1975 2N910 2N911 2N912 2N1975 6/18/2N911

    2N2537

    Abstract: 2n2540 2N2537 texas 2M253 2N2538 2n2539
    Text: TYPES 2N2537 THRU 2N2540 N-P-N SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 9 4 1 3 0 , A U G U S T 1 9 6 3 -R E V IS E D J A N U A R Y 1969 D ESIG N ED FOR MEDIUM-POWER SWITCHING AND G EN ERA L PURPOSE A M P LIF IER APPLICATIONS • Total Switching Time . 80 nsec max at 150 ma


    OCR Scan     		PDF 2N2537 2N2540 2N2538 2N2537 texas 2M253 2N2538 2n2539

    VOICE RECORDER IC

    Abstract: No abstract text available
    Text: Features • • • • • • • Stores Voice and Data Complete Recorder with External Microphone and Speaker 2-megabit of Flash Memory Directly Accessible via 2-wire Interface Automatic Message Management in Stand-alone Mode Mixed Mode Usage in CPU Mode


    OCR Scan     		PDF AT72AV020 AT72AV020 VOICE RECORDER IC

    RNW transistor

    Abstract: 2n3486a 2N3485
    Text: TYPES 2N3485, 2N3485A, 2N3486. 2N3486A P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 5 7 8 8 5 , J U L Y 1 965 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • Electrically Identical to 2N2906, 2N2906A, 2N2907, and 2N2907A in


    OCR Scan     		PDF 2N3485, 2N3485A, 2N3486. 2N3486A 2N2906, 2N2906A, 2N2907, 2N2907A 2N3485 2N3486 RNW transistor

    2N929

    Abstract: No abstract text available
    Text: TYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 S 3 S 6 3 , M A Y 1 9 6 3 - R E V I S E D S E P T E M B E R 1 9 6 5 FOR 10W-LEVU, 10W-N0ISE, HIGH-GAIN, AMPURER APPLICATIONS * Guarani—d hFE at 10 pa, T* = — 55°C and 25*C * GuarantMd low-Nois* Choroctwisttc at 10 pa


    OCR Scan     		PDF 2N929, 2N930 2N929

    SDB520

    Abstract: SDB-520 2SC1884 line diagram of three phase motor SDB520A 1BZ61 three phase pulse generator single phase motor circuit diagram OPERATIONS excitation system 4-Phase Stepping Motor Driver
    Text: Stepping Motor Drive 1C IMC Magnetics Corp., Western Division, proudly introduces its new SDB-520 A stepping-motor drive 1C chip which is intended for a wide variety of applications. This chip can control three and four phase stepping-motors in either 1, 2, or 1-2 phase excitation-mode operations.


    OCR Scan     		PDF SDB-520 SDB520 SDB-520 2SC1884 line diagram of three phase motor SDB520A 1BZ61 three phase pulse generator single phase motor circuit diagram OPERATIONS excitation system 4-Phase Stepping Motor Driver