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    MMIC AMPLIFIER S5 Search Results

    MMIC AMPLIFIER S5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    MMIC AMPLIFIER S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor S710 diagram

    Abstract: No abstract text available
    Text: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for


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    PDF SKY65135: IEEE802 SKY65135 20-pin, 200436C transistor S710 diagram

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for


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    PDF SKY65135: IEEE802 SKY65135 20-pin, 200436B

    S413

    Abstract: SKY65135 SKY65135-21 C1222 transistor c1222 S414 FR4-12
    Text: DATA SHEET SKY65135: WLAN Power Amplifier Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65135 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65135 ideal for


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    PDF SKY65135: IEEE802 SKY65135 200436D S413 SKY65135-21 C1222 transistor c1222 S414 FR4-12

    103106F

    Abstract: SKY65131-21 S106 S107 S324 S580 SKY65131
    Text: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal


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    PDF SKY65131: IEEE802 SKY65131 103106F 103106F SKY65131-21 S106 S107 S324 S580

    103252F

    Abstract: C2330 s415 S413 S414 SKY65132 power amplifier 5 ghz mcm 750 AC1222 C1222 transistor
    Text: DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for


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    PDF SKY65132: IEEE802 SKY65132 103252F 103252F C2330 s415 S413 S414 power amplifier 5 ghz mcm 750 AC1222 C1222 transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal


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    PDF SKY65131: IEEE802 SKY65131 103106D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for


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    PDF SKY65132: IEEE802 SKY65132 20-pin, 103252C

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal


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    PDF SKY65131: IEEE802 SKY65131 103106E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65131: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal


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    PDF SKY65131: IEEE802 SKY65131 103106F

    2417 "cross reference"

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for


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    PDF SKY65132: IEEE802 SKY65132 20-pin, 103252E 2417 "cross reference"

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65132: WLAN Power Amplifier Module Applications Description • IEEE802.11 b/g WLAN Skyworks SKY65132 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65132 ideal for


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    PDF SKY65132: IEEE802 SKY65132 20-pin, 103252D

    RF AMPLIFIER marking S5

    Abstract: SNA586 mmic AMPLIFIER marking S5
    Text: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation


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    PDF SNA-586 SNA-586 SNA-500) EDS-101397 RF AMPLIFIER marking S5 SNA586 mmic AMPLIFIER marking S5

    SNA-586

    Abstract: RF AMPLIFIER marking S5
    Text: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a GaAs HBT MMIC Amplifier housed in a low-cost, surface-mountable plastic package. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation


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    PDF SNA-586 AN-018 SNA-586 SNA-500) EDS-101397 RF AMPLIFIER marking S5

    SNA-586

    Abstract: ECB-100330 Sirenza Microdevices sna586 DC-5GHZ SOT-86 NGA-586 Sirenza Microdevices, Inc
    Text: Preliminary Preliminary SNA-586 Product Description Sirenza Microdevices’ SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage


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    PDF SNA-586 SNA-586 NGA-586 ECB-100330 OT-86 EDS-101397 Sirenza Microdevices sna586 DC-5GHZ SOT-86 Sirenza Microdevices, Inc

    FMA3050

    Abstract: No abstract text available
    Text: FMA3050 Pilot Datasheet v2.1 6-8.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 34 dB Gain 30 dBm P1dB Output Power at 6 V, 1.4 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5.1 x 3 sq. mm die D1 D2 D3 D4


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    PDF FMA3050 FMA3050 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3051

    Abstract: FMA3051-000
    Text: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4


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    PDF FMA3051 FMA3051 22-A114. MIL-STD-1686 MILHDBK-263. FMA3051-000

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 50 GaAs MMIC Single-stage monolithic microwave 1C MMIC-amplifier Cascadable 50 i l gain block Application range: 100 MHz to 3 GHz IP3 30 dBm typ. @ 1.8 GHz Gain 8.5 dB typ. @ 1.8 GHz Low noise figure: 3.0 dB typ @ 1.8 GHz Gain control dynamic range 20 dB


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    PDF Q68000A8370 OT-143 23SbOS

    mmic e3

    Abstract: dg s22
    Text: e3 Stanford Microdevices Product Description SNA-300 Stanford Microdevices' SNA-300 is a GaAs monolithic broad­ band amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency


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    PDF SNA-300 SNA-376, SNA-300 84-1LMIT1 mmic e3 dg s22

    Siemens C

    Abstract: GY0819 diode 1N 0403 "1u0 1206"
    Text: SIEMENS CGY0819 GaAs MMIC • • • • • • Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones Dual band operation 31.5 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Two independent amplifier chains


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    PDF CGY0819 Q62702G0076 577ms Siemens C GY0819 diode 1N 0403 "1u0 1206"

    CGY2021G

    Abstract: LQFP48 PCA5075 SMD0603
    Text: Philips Semiconductors Objective specification DCS/PCS 2 W power amplifier CGY2021G FEATURES G EN ER A L DESCRIPTION • Pow er Amplifier PA overall efficiency 48% (DCS) The C G Y 2 0 2 1 G is a D C S /P C S cla ss 1 G a A s Monolithic M icrowave Integrated Circuit (MMIC) power amplifier


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    PDF CGY2021G 48-pin PCA5075 UBA1710. CGY2021G DlD1fl71 LQFP48 SMD0603

    Siemens pulse sequence

    Abstract: power supply siemens s5 Siemens diode Ssi
    Text: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match


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    PDF 62702G Siemens pulse sequence power supply siemens s5 Siemens diode Ssi

    Untitled

    Abstract: No abstract text available
    Text: Wfinl H EW LETT m L rJk PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features • Ultra-Miniature Package • Internally Biased, Single 5 V Supply 12 mA • 20.5 dB Gain • 3 dB NF • Unconditionally Stable Applications • Amplifier for Cellular,


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    PDF INA-51063 OT-363 SC-70) INA-51063 INA-51063-TR1 INA-51063-BLK OT-363/SC-70) 001Eb3b

    Untitled

    Abstract: No abstract text available
    Text: What mifiM HEWLETT PACKARD Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01170 Features • Cascadable 50 Q Gain Block • Low Noise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth: DC to 500 MHz


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    PDF INA-01170 5965-9562E 44475A4 0Glfl34S

    IK-120

    Abstract: No abstract text available
    Text: fT Jf HEWLETT •321 PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical P t dB at -1 .0 GHz • Unconditionally Stable


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    PDF MSA-0311 Available111 MSA-0311 OT-143 IK-120