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    MMC VERSION 4.0 Search Results

    MMC VERSION 4.0 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    10067847-601RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions
    10067847-511RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions
    10067847-201RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions

    MMC VERSION 4.0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 103 250v

    Abstract: Lbn45.75 PM1-M1.75 BT-N51KRI-LC4.75 capacitor+63v+1000+micro+f
    Text: MMC Dimensions MMC Character NISSEI METALLIZED POLYESTER FILM CAPACITOR Type MMC Features Smaller version of MMH type. Very small size, achieved by our unique manufacturing method. Highly reliable because of its self-healing performance. Uniform flame retardant epoxy resin coating through the latest resin technology.


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    PDF 1000hr capacitor 103 250v Lbn45.75 PM1-M1.75 BT-N51KRI-LC4.75 capacitor+63v+1000+micro+f

    DIM200PHM33-A000

    Abstract: No abstract text available
    Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces October 2001, version DS5464-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS


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    PDF DIM200PHM33-A000 DS5464-4 DS5464-5 DIM200PHM33-A000

    emmc 4.4 standard jedec

    Abstract: GLS85VM1008A-M-I-LFWE-ND200 Specification eMMC 4.0 emmc bga eMMC data retention BGA EMMC
    Text: GLS85VM1008A / 1016A / 1032A Industrial Temp eMMC NANDrive Fact Sheet 01.000 March 2013 Features • Industry Standard Embedded MultiMediaCard eMMC Host Interface - JEDEC/MMC Standard Version 4.4 JESD84-A44 compliant - Backward compatible with eMMC 4.3


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    PDF GLS85VM1008A JESD84-A44 52MHz 180mA GLS85VM1032A) 150mA GLS85VM1016A) 120mA GLS85VM1008A) S71425-F emmc 4.4 standard jedec GLS85VM1008A-M-I-LFWE-ND200 Specification eMMC 4.0 emmc bga eMMC data retention BGA EMMC

    IC 7800

    Abstract: diode current 1200A DIM1200ESM33-A000
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003


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    PDF DIM1200ESM33-A000 DS5492-4 DS5492-5 IC 7800 diode current 1200A DIM1200ESM33-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces December 2001, version DS5495-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-4.0 May 2002


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    PDF DIM400GDM33-A000 DS5495-3 DS5495-4 DIM400GDlity

    ic 7494

    Abstract: DIM400GDM33-A000
    Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Replaces May 2002, version DS5495-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5495-4.1 June 2002


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    PDF DIM400GDM33-A000 DS5495-4 ic 7494 DIM400GDM33-A000

    DIM1200ESM33-A000

    Abstract: No abstract text available
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces May 2002, version DS5492-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-4.0 June 2002


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    PDF DIM1200ESM33-A000 DS5492-3 DS5492-4 DIM1200ESM33-A000

    IC 7800

    Abstract: DIM1200ESM33-A000
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces June 2002, version DS5492-4.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5492-5.0 February 2003


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    PDF DIM1200ESM33-A000 DS5492-4 DS5492-5 IC 7800 DIM1200ESM33-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM1200ESM33-A000 DS5492-5 DS5492-6 DIM1200ESM33y

    AN4505

    Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
    Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF GP800DDM18 DS5364-2 DS5364-3 3300y AN4505 GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram

    AN4502

    Abstract: AN4503 GP1200ESM33 DS5308-1
    Text: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001


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    PDF GP1200ESM33 DS5308-1 DS5308-2 GP1200ESM33 AN4502 AN4503

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v
    Text: GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES • High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF GP800DDM12 DS5291-1 DS5291-2 AN4502 AN4503 AN4505 AN4506 GP800DDM12 dynex igbt 1200v

    Untitled

    Abstract: No abstract text available
    Text: DIM1200ESM33-A000 DIM1200ESM33-A000 Single Switch IGBT Module Replaces February 2003, version DS5492-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM1200ESM33-A000 DS5492-5 DS5492-6 DIM1200ESM33y

    bi-directional switches IGBT

    Abstract: H BRIDGE inverters circuit diagram using igbt inverter power 12v dc to 220 dc circuit diagram 125 diode Material Handling Systems power recovery diode DIM200PHM33-A000
    Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces June 2002, version DS5464-6.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS


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    PDF DIM200PHM33-A000 DS5464-6 DIM200PHM33-A000 bi-directional switches IGBT H BRIDGE inverters circuit diagram using igbt inverter power 12v dc to 220 dc circuit diagram 125 diode Material Handling Systems power recovery diode

    bi-directional switches IGBT

    Abstract: DIM200PHM33-A000
    Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS


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    PDF DIM200PHM33-A000 DS5464-6 DS5464-7 DIM200PHM33-A000 bi-directional switches IGBT

    Untitled

    Abstract: No abstract text available
    Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces November 2002, version DS5464-6.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS


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    PDF DIM200PHM33-A000 DS5464-6 DS5464-7 DIM200PHM33-A000

    DIM200PHM33-F000

    Abstract: No abstract text available
    Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability


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    PDF DIM200PHM33-F000 PDS5606-2 PDS5606-3 DIM200PHM33-F000

    DIM800NSM33-F000

    Abstract: PDS5615-2 4800 8 PIN IC
    Text: DIM800NSM33-F000 DIM800NSM33-F000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5615-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability


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    PDF DIM800NSM33-F000 PDS5615-2 PDS5615-3 DIM800NSM33-F000 4800 8 PIN IC

    DIM200PHM33-A000

    Abstract: tc 2608
    Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Replaces May 2002, version DS5464-5.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates APPLICATIONS


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    PDF DIM200PHM33-A000 DS5464-5 DS5464-6 DIM200PHM33-A000 tc 2608

    mj power transistor

    Abstract: PDS5615-2 DIM800NSM33-F000
    Text: DIM800NSM33-F000 DIM800NSM33-F000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5615-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability


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    PDF DIM800NSM33-F000 PDS5615-2 PDS5615-3 1050g mj power transistor DIM800NSM33-F000

    723 ic internal diagram

    Abstract: DIM400GDM33-A000
    Text: DIM400GDM33-A000 DIM400GDM33-A000 Dual Switch IGBT Module Preliminary Information Replaces September 2001, version DS5495-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM400GDM33-A000 DS5495-1 723 ic internal diagram DIM400GDM33-A000

    DIM800DCM12-A000

    Abstract: 4E26
    Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS


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    PDF DIM800DCM12-A000 DS5548-2 DS5548- DIM800DCM12-A000 4E26

    K1p TRANSISTOR

    Abstract: AN4502 AN4503 AN4505 GP1600FSM18
    Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001


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    PDF GP1600FSM18 DS5361-1 DS5361-2 GP1600FSM18 K1p TRANSISTOR AN4502 AN4503 AN4505

    bi-directional switches IGBT

    Abstract: DIM800DCM12-A000
    Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS


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    PDF DIM800DCM12-A000 DS5548-2 DS5548- DIM800DCM12-A000 bi-directional switches IGBT