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    MMBT3904 40V SOT23 Search Results

    MMBT3904 40V SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DIYAMP-SOT23-EVM Texas Instruments Universal Do-It-Yourself (DIY) Amplifier Circuit Evaluation Module Visit Texas Instruments Buy
    REF1112AIDBZRG4 Texas Instruments 1uA, SOT23-3 10ppm/C Shunt Voltage Reference 3-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM4132AQ1MFR3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LM4132CQ1MFT3.0 Texas Instruments Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125 Visit Texas Instruments Buy

    MMBT3904 40V SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number


    Original     		MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R MMBT3904L-AN3-R MMBT3904G-AN3-R OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 „ ORDERING INFORMATION Ordering Number


    Original     		MMBT3904 350mW MMBT3906 MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904L-AL3-R MMBT3904G-AL3-R OT-23 OT-323 QW-R206-012 PDF

    MMBT3906G-AE3-R

    Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G


    Original     		MMBT3906 350mW MMBT3904 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AE3-R VCE30V MMBT3904 MMBT3906 MMBT3906G MMBT3906L marking 2A PDF

    MMBT3904-AE3-R

    Abstract: MMBT3904G MMBT3904 MMBT3904-AL3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G


    Original     		MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904G-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R MMBT3904G MMBT3904 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L MMBT3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Normal


    Original     		MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:


    Original     		MMBT3906 350mW MMBT3904 MMBT3906G-AE3-R MMBT3906G-AL3-R MMBT3906G-AN3-R OT-23 OT-323 OT-523 QW-R206-013 PDF

    mmbt3904 complementary

    Abstract: MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 *Pb-free plating product number: MMBT3904L „


    Original     		MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904-AE3-R MMBT3904L-AE3-R MMBT3904-AL3-R MMBT3904L-AL3-R OT-23 OT-323 mmbt3904 complementary MMBT3904-AE3-R MMBT3904 MMBT3904-AL3-R MMBT3904L MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3906 PDF

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Lead Free


    Original     		MMBT3906 350mW MMBT3904 MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906L-AL3-R MMBT3906G-AL3-R MMBT3906L-AN3-R MMBT3906G-AN3-R OT-23 MMBT3906 UTC PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906  ORDERING INFORMATION Ordering Number


    Original     		MMBT3904 350mW MMBT3906 MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904G-AN3-R OT-23 OT-323 OT-523 QW-R206-012 PDF

    MMBT3904G-AE3-R

    Abstract: MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 Lead-free: MMBT3904L Halogen-free: MMBT3904G


    Original     		MMBT3904 350mW MMBT3906 MMBT3904L MMBT3904G MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904L-AE3-R MMBT3904L-AL3-R MMBT3904G-AE3-R MMBT3904G-AE3-R MMBT3904G-AL3-R MMBT3904L-AE3-R MMBT3904 MMBT3904-AE3-R MMBT3904-AL3-R MMBT3904G MMBT3904L MMBT3904L-AL3-R MMBT3906 PDF

    MMBT3906

    Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS


    Original     		MMBT3906 MMBT3904) -100mA) OT-23 BL/SSSTC062 MMBT3906 MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23 PDF

    sot23 marking 1AM

    Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
    Text: BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free MMBT3906 . z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V.


    Original     		MMBT3904 MMBT3906) 200mA. OT-23 BL/SSSTC061 sot23 marking 1AM sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor PDF

    MMBT3904

    Abstract: K1N diodes MMBT3904Q-7-F sot23 marking C1N k1n sot-23 marking
    Text: MMBT3904 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching


    Original     		MMBT3904 MMBT3906) AEC-Q101 J-STD-020 MIL-STD-202, DS30036 MMBT3904 K1N diodes MMBT3904Q-7-F sot23 marking C1N k1n sot-23 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		MMBT3904 MMBT3906) AEC-Q101 J-STD-020 MIL-STD-202, DS30036 PDF

    MMBT3906

    Abstract: No abstract text available
    Text: MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •         Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complementary NPN Type: MMBT3904 Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


    Original     		MMBT3906 MMBT3904 AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 PDF

    MARKING 2A

    Abstract: MMBT3904 SOT-23 MMBT3906-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R MMBT3906L MMBT3906L-AE3-R MMBT3904 40V SOT23
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION 3 1 FEATURES 2 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 SOT-23 3 2 1 SOT-323 *Pb-free plating product number: MMBT3906L


    Original     		MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906L MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MARKING 2A MMBT3904 SOT-23 MMBT3906-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R MMBT3906L MMBT3906L-AE3-R MMBT3904 40V SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, PDF

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION 3 FEATURES 1 2 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3906 SOT-23 3 2 1 SOT-323 *Pb-free plating product number: MMBT3904L


    Original     		MMBT3904 350mW MMBT3906 OT-23 OT-323 MMBT3904L MMBT3904-AE3-6-R MMBT3904-AL3-6-R PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V.


    Original     		MMBT3904 OT-23 200mA 17-Dec-2009 PDF

    MMBT3904

    Abstract: No abstract text available
    Text: MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES • • SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V.


    Original     		MMBT3904 OT-23 200mA 30-Aug-2010 MMBT3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA


    Original     		MMBT3904-AU OT-23 200mA 300MHz 10mAdc, 20Vdc 100MHz TS16949 AEC-Q101 2002/95/EC PDF

    2A marking MMBT3906

    Abstract: MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ 3 FEATURES 1 2 SOT-23 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 3 2 1 SOT-323 Lead-free: MMBT3906L Halogen-free:MMBT3906G


    Original     		MMBT3906 OT-23 350mW MMBT3904 OT-323 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906L-AE3-R 2A marking MMBT3906 MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3904 MMBT3906 MMBT3906-AL3-R PDF

    MMBT3906

    Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
    Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		MMBT3906 MMBT3904) AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F PDF