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    MMBT3906G Search Results

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    MMBT3906G Price and Stock

    Rochester Electronics LLC MMBT3906-G

    TRANS PNP 40V 0.2A SOT23-3
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    DigiKey MMBT3906-G Bulk 105,000 11,539
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    Comchip Technology Corporation Ltd MMBT3906-G

    TRANS PNP 40V 0.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3906-G Cut Tape 19,012 1
    • 1 $0.12
    • 10 $0.081
    • 100 $0.12
    • 1000 $0.03668
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    MMBT3906-G Digi-Reel 19,012 1
    • 1 $0.12
    • 10 $0.081
    • 100 $0.12
    • 1000 $0.03668
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    MMBT3906-G Reel 18,000 3,000
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    • 10000 $0.03084
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    Mouser Electronics MMBT3906-G 42,874
    • 1 $0.12
    • 10 $0.081
    • 100 $0.041
    • 1000 $0.031
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    Verical MMBT3906-G 60,000 3,000
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    • 10000 $0.0855
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    Bristol Electronics MMBT3906-G 3,400 89
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    Quest Components MMBT3906-G 21,600
    • 1 $0.28
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    MMBT3906-G 2,720
    • 1 $0.075
    • 10 $0.075
    • 100 $0.075
    • 1000 $0.025
    • 10000 $0.0075
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    Karl Kruse GmbH & Co KG MMBT3906-G 60,000
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    NAC MMBT3906-G 60,000 1
    • 1 $0.05
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    • 10000 $0.021
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    Chip 1 Exchange MMBT3906-G 60,000
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    Vishay Intertechnologies MMBT3906-GS08

    Bipolar Junction Transistor, PNP Type, SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MMBT3906-GS08 9,000
    • 1 $0.064
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    Fairchild Semiconductor Corporation MMBT3906-G

    MMBT3906 - PNP General Purpose Amplifier '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MMBT3906-G 105,000 1
    • 1 $0.025
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    • 100 $0.0235
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    Others MMBT3906-G

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    PUI MMBT3906-G 60,000
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    MMBT3906G Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT3906-G Comchip Technology Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 40V 0.2A SOT-23 Original PDF
    MMBT3906G Unknown SMD, General Purpose Transistor, -40V -0,2A 225mW, Silicon PNP-transistor Original PDF
    MMBT3906-G Comchip Technology GENERAL PURPOSE TRANSISTORS Scan PDF
    MMBT3906GS08 Vishay XSTR,PNP,40V,SOT23 Original PDF

    MMBT3906G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N916

    Abstract: MMBT3906GH
    Text: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT3906GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO


    Original     		PDF MMBT3906GH OT-23 1N916 MMBT3906GH

    MMBT3906-2A

    Abstract: 1N916 MMBT3906 MMBT3906G
    Text: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product COLLECTOR 3 3 MMBT3906G BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage


    Original     		PDF MMBT3906G OT-23 MMBT3906-2A 1N916 MMBT3906 MMBT3906G

    MMBT3906G-AE3-R

    Abstract: VCE30V MMBT3904 MMBT3906 MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R marking 2A
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 Lead-free: MMBT3906L Halogen-free: MMBT3906G


    Original     		PDF MMBT3906 350mW MMBT3904 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R MMBT3906G-AE3-R VCE30V MMBT3904 MMBT3906 MMBT3906G MMBT3906L marking 2A

    Untitled

    Abstract: No abstract text available
    Text: Zowie Technology Corporation General Purpose Transistor PNP Silicon Lead free product COLLECTOR 3 3 MMBT3906G BASE 1 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage


    Original     		PDF MMBT3906G OT-23

    MMBT3906 vishay

    Abstract: No abstract text available
    Text: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor NPN MMBT3904-G (RoHS Device) NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906-G) Ideal for Medium Power Amplification and switching SOT-23 .122 (3.1) .110 (2.8) Circuit Schematic


    Original     		PDF MMBT3904-G MMBT3906-G) OT-23 MDS0306001A

    TRANSISTOR SMD MARKING CODE p1

    Abstract: TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 2


    Original     		PDF MMBT3906-G OT-23 MMBT3904-G XXX2-02 XXX1-03 XXX2-03 XXX1-04 XXX2-04 XXX1-05 XXX2-05 TRANSISTOR SMD MARKING CODE p1 TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23

    smd 2N3906

    Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
    Text: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )


    Original     		PDF 2N3906-G 2N3904-G OT-23 MMBT3906-G. 200uA QW-BTR05 smd 2N3906 2N3904 TRANSISTOR SMD 2N3906 SMD

    2A marking MMBT3906

    Abstract: MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3906L-AE3-R MMBT3904 MMBT3906 MMBT3906-AL3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION „ 3 FEATURES 1 2 SOT-23 * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC MAX =350mW * Complementary to MMBT3904 3 2 1 SOT-323 Lead-free: MMBT3906L Halogen-free:MMBT3906G


    Original     		PDF MMBT3906 OT-23 350mW MMBT3904 OT-323 MMBT3906L MMBT3906G MMBT3906-AE3-R MMBT3906-AL3-R MMBT3906L-AE3-R 2A marking MMBT3906 MARKING 2A MMBT3906-AE3-R MMBT3906G MMBT3906L MMBT3904 MMBT3906 MMBT3906-AL3-R

    MMBT3906-G

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector 3 2 0.079 (2.00)


    Original     		PDF MMBT3906-G OT-23 MMBT3904-G XXX2-02 XXX1-03 XXX2-03 XXX1-04 XXX2-04 XXX1-05 XXX2-05 MMBT3906-G

    2N3906-G

    Abstract: No abstract text available
    Text: General Purpose Transistor 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 ) 0. 0 14( 0. 36)


    Original     		PDF 2N3906-G 2N3904-G OT-23 MMBT3906-G. 200uA QW-BTR05 2N3906-G

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor 2N3906-G RoHS Device PNP Features TO-92 -PNP silicon epitaxial planar transistor for switching and amplifier application. 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. -This transistor is available in the SOT-23 0.055 (1. 14)


    Original     		PDF 2N3906-G OT-23 2N3904-G MMBT3906-G. 200uA QW-BTR05

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 Collector 3 0.079 (2.00)


    Original     		PDF MMBT3906-G OT-23 MMBT3904-G XXX2-02 XXX1-03 XXX2-03 XXX1-04 XXX2-04 XXX1-05 XXX2-05

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES „ * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904 „ ORDERING INFORMATION Ordering Number Normal


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 OT-323 MMBT3906-AE3-R MMBT3906L-AE3-R MMBT3906G-AE3-R MMBT3906-AL3-R MMBT3906L-AL3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES  * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD MAX =350mW * Complementary to UTC MMBT3904  ORDERING INFORMATION Ordering Number Note:


    Original     		PDF MMBT3906 350mW MMBT3904 MMBT3906G-AE3-R MMBT3906G-AL3-R MMBT3906G-AN3-R OT-23 OT-323 OT-523 QW-R206-013

    MMBT3906 vishay

    Abstract: No abstract text available
    Text: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case


    Original     		PDF MMBT3906 MMBT3904 2N3906. OT-23 MMBT3906 MMBT3906-GS18 MMBT3906-GS08 D-74025 19-May-04 MMBT3906 vishay

    smd transistor JE

    Abstract: 1c smd transistor j 6 smd transistor smd transistor b2 smd transistor LL smd transistor LL sot23 SMD Transistor 1c SMD SOT23 b21 QW-BTR02 transistor pnp 20v, 2.5a smd
    Text: COAtCHII’ General Purpose Transistor S M D D io d e s S p e c ia lis t MMBT3906-G p n p RoHS Device Features S O T -2 3 -Epitaxial p la n a rd ie construction - A s c o m p l e m e n t a r y t y p e, t h e N P N , 0.119 (3.00) 0.110 (2.80) t r a n s i s t o r M M B T 3 9 0 4 - G is r e c o m m e n d e d


    OCR Scan     		PDF MMBT3906-G MMBT3904-G OT-23 10-Voltagefeedback 12-Temperature QW-BTR02 smd transistor JE 1c smd transistor j 6 smd transistor smd transistor b2 smd transistor LL smd transistor LL sot23 SMD Transistor 1c SMD SOT23 b21 QW-BTR02 transistor pnp 20v, 2.5a smd