MMBT2222
Abstract: MMBT2222A MMBT2222A SOT23
Text: MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75
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MMBT2222
MMBT2222A
OT-23
MMBT2222
MMBT2222A
MMBT2222A SOT23
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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Untitled
Abstract: No abstract text available
Text: MMBT2222 MMBT2222A 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain
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MMBT2222
MMBT2222A
OT-23
15mAdc)
50mAdc)
MMBT2222A
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MMBT2222A
Abstract: PMBT2907A
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA
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MMBT2222A
PMBT2907A.
MAM255
SCA76
R75/02/pp7
MMBT2222A
PMBT2907A
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BP317
Abstract: MMBT2222A PMBT2907A
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).
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M3D088
MMBT2222A
PMBT2907A.
MAM255
603506/01/pp8
BP317
MMBT2222A
PMBT2907A
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MMBT2222
Abstract: MMBT2222A mmbt2222 datasheet SOT23 transistor mmbt2222A
Text: MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Value Symbol Unit MMBT2222 MMBT2222A Collector Base Voltage VCBO 60 75
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MMBT2222
MMBT2222A
OT-23
MMBT2222
MMBT2222A
mmbt2222 datasheet
SOT23 transistor mmbt2222A
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MMBT2222
Abstract: MMBT2222A
Text: MMBT2222 / MMBT2222A NPN Silicon General Purpose Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage VCEO 30 40 V Emitter Base Voltage VEBO 5 6
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MMBT2222
MMBT2222A
OT-23
MMBT2222
100MHz
150mA,
MMBT2222A
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SOT-23 marking r1p
Abstract: k1p sot-23 PN2222 SOT23 R1P marking K1P SOT-23 sot-23 1p MMBT2222A SOT23 sot-23 1P F sot-23 Marking k1p PN2222A
Text: PN2222A / MMBT2222A NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT2222A Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Types Available
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PN2222A
MMBT2222A
PN2907A/MMBT2907A)
OT-23
PN2222A
O-92/SOT-23,
MIL-STD-202,
100kHz,
100MHz
SOT-23 marking r1p
k1p sot-23
PN2222
SOT23 R1P
marking K1P SOT-23
sot-23 1p
MMBT2222A SOT23
sot-23 1P F
sot-23 Marking k1p
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k1P transistor sot 23
Abstract: K1p TRANSISTOR sot-23 Marking k1p k1p sot-23 NPN K1P K1P DIODES marking code k1p sot-23 k1p sot 23
Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · ·
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MMBT2222A
MMBT2907A)
OT-23
OT-23,
J-STD-020A
MIL-STD-202,
DS30041
k1P transistor sot 23
K1p TRANSISTOR
sot-23 Marking k1p
k1p sot-23
NPN K1P
K1P DIODES
marking code k1p sot-23
k1p sot 23
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Untitled
Abstract: No abstract text available
Text: MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc)
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MMBT2222
MMBT2222A
OT-23
15mAdc)
50mAdc)
MMBT2222A
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transistor M22 marking
Abstract: No abstract text available
Text: MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A
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MMBT2222A
OT-23
MMBT2907A
OT-23
transistor M22 marking
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transistor M22 marking
Abstract: marking M22 MMBT2222A MMBT2907A marking BS SOT-23
Text: MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A
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MMBT2222A
OT-23
MMBT2907A
OT-23
transistor M22 marking
marking M22
MMBT2222A
MMBT2907A
marking BS SOT-23
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k1P transistor sot 23
Abstract: No abstract text available
Text: SPICE MODEL: MMBT2222A MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction SOT-23 Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching A Lead Free/RoHS Compliant (Note 2)
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MMBT2222A
MMBT2907A)
OT-23
J-STD-020C
MIL-STD-202,
DS30041
k1P transistor sot 23
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
BCW66
SMBT2907AW
MARKING s1P
smbt2222a sot23 marking code
S1p MARKING
BCW66
77 ic marking code
transistor marking code 24
24 marking code transistor
transf
SMBT2222A SOT23
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k1P transistor sot 23
Abstract: K1p TRANSISTOR sot-23 Marking k1p
Text: SPICE MODEL: MMBT2222A MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction SOT-23 Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching A Available in Lead Free/RoHS Compliant Version (Note 2)
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MMBT2222A
MMBT2907A)
OT-23
J-STD-020C
MIL-STD-202,
DS30041
k1P transistor sot 23
K1p TRANSISTOR
sot-23 Marking k1p
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h22e
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
h22e
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K1p TRANSISTOR
Abstract: k1p sot-23 k1P transistor sot 23 marking k1p J-STD-020A MMBT2222A MMBT2222A-7 MMBT2222A-7-F MMBT2907A sot-23 Marking k1p
Text: MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features • · · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907A Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version
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MMBT2222A
MMBT2907A)
OT-23
OT-23,
J-STD-020A
DS30041
K1p TRANSISTOR
k1p sot-23
k1P transistor sot 23
marking k1p
J-STD-020A
MMBT2222A
MMBT2222A-7
MMBT2222A-7-F
MMBT2907A
sot-23 Marking k1p
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
npn 2222 transistor
MMBT2222A
SMBT2222A
SMBT2907A
MARKING s1P
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Untitled
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).
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MMBT2222A
PMBT2907A.
MAM255
R75/02/pp7
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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Untitled
Abstract: No abstract text available
Text: MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC=0.1 mAdc, VCE=10 Vdc)
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MMBT2222
MMBT2222A
OT-23
15mAdc)
50mAdc)
MMBT2222A
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MMBT2222A
Abstract: PMBT2907A transistor mmbt2222a
Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN
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MMBT2222A
PMBT2907A.
MAM255
R75/02/pp7
MMBT2222A
PMBT2907A
transistor mmbt2222a
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MMBT2222
Abstract: MMBT2709 MMBT2222A MMBT2709A marking M1P
Text: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse
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MMBT2222
MMBT2222A
OT-23
O-236)
UL94V-0
MMBT2222
MMBT2709
MMBT2222A
MMBT2709A
marking M1P
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