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    ML7XX11 Search Results

    ML7XX11 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ML7XX11 Mitsubishi Optoelectronics - Discrete Products Original PDF
    ML7XX11 Mitsubishi Network Processor, DFB-LDs for Trunk Line, Access Network and Data Communication Original PDF

    ML7XX11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ML7XX11

    Abstract: ML720J11S ML725B11F
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP DFB-LASER DIODES TYPE NAME ML725B11/ML720J11S/ML725J11F DESCRIPTION APPLICATION ML7XX11 series are DFB Distributed Feedback laser diodes emitting light beam around 1310nm. They are well suited for light source in long -distance


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    ML7XX11 ML725B11/ML720J11S/ML725J11F 1310nm. ML725B11F ML720J11S ML7XX11-01 ML7XX11-03 ML720J11S PDF

    ML720AA11S

    Abstract: ML720J11S ML725AA11F ML725B11F ML7XX11
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES Notice : Some parametric limits are subject to change TYPE NAME InGaAsP DFB LASER DIODES ML725B11F/ML720J11S ML725AA11F / ML720AA11S ML725J11F / ML720L11S DESCRIPTION ML7XX11series are DFB Distributed Feedback laser


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    ML7XX11 ML725B11F/ML720J11S ML725AA11F ML720AA11S ML725J11F ML720L11S ML7XX11series 1310nm. 25Gbps ML720AA11S ML720J11S ML725B11F PDF

    "Photo Diode"

    Abstract: ML7XX11 ML720J11S ML725B11F
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP DFB-LASER DIODES TYPE NAME ML725B11F / ML720J11S DESCRIPTION APPLICATION ML7XX11 series are DFB Distributed Feedback laser diodes emitting light beam around 1310nm. They are well suited for light source in long -distance


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    ML7XX11 ML725B11F ML720J11S 1310nm. ML720J11S ML7XX11-01 ML7XX11-03 ML725B11F "Photo Diode" PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    FU-456RDF

    Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


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    350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series PDF

    650nm laser diode 200mw

    Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


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    350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46 PDF

    laser diode DVD 300mw

    Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information


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    H-CP606-E laser diode DVD 300mw MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W +— DFB* • L o w threshold current typical laser diodes emitting 10mA •S ta b le single transverse mode oscillation light beam around 131Qnm.


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    ML7XX11 131Qnm. ML776H11F PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are MQW* —DFB* laser diodes emitting • L o w threshold current typical 10mA • S ta b le single transverse mode oscillation light beam around 1310nm.


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    ML7XX11 1310nm. ML776H11F PDF

    ML776H11F

    Abstract: ML7XX11
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W *—DFB* laser diodes emitting • L o w threshold current typical 10mA • S ta b le single transverse mode oscillation light beam around 1310nm.


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    ML7XX11 1310nm. ML776H11F 200ps/div PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W * — D F B * laser diod es em itting •L o w th resho ld cu rre n t typical 10m A • S t a b le single tra nsverse m ode oscillation


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    ML7XX11 L776H PDF

    ml976h6f

    Abstract: No abstract text available
    Text: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ


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    L4XX23 L601I5R ML60116R ML64116R ML60120R L61120 PD7006 PD7869 PD8933 ML7XX10 ml976h6f PDF

    MITSUBISHI SMALL SIGNAL DIODE

    Abstract: 1340KM
    Text: MITSUBISHI OPTICAL SEMICONDUCTOR DEVICES MEASURING PROCEDURES <Measuring Methods> 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. Page Optical output vs. forwardand monitoring c u rre n t. 1 - 1 7 Im pedance


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    L7XX11 ML7XX11 MITSUBISHI SMALL SIGNAL DIODE 1340KM PDF