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    MJE5851 TRANSISTOR Search Results

    MJE5851 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE5851 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pnp 222A

    Abstract: MJE5850 MJE5851G MJE5851 MJE5852G 1N4934 MJE15029 MJE5850G MJE5852
    Text: MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits


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    MJE5850, MJE5851, MJE5852 MJE5851 MJE5852 MJE5850/D pnp 222A MJE5850 MJE5851G MJE5852G 1N4934 MJE15029 MJE5850G PDF

    MJE5852G

    Abstract: MJE5850 MJE5852 MJE5850G MJE5851 MJE5851G MJE-5851 3003-50 MJE-5850
    Text: MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850, MJE5851, MJE5852 MJE5851 MJE5852 MJE5852G MJE5850 MJE5850G MJE5851G MJE-5851 3003-50 MJE-5850 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850, MJE5851, MJE5852 MJE5851 MJE5852 MJE5850/D PDF

    pnp 222A

    Abstract: No abstract text available
    Text: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850, MJE5851 MJE5852 MJE5850 MJE5851 MJE5852 pnp 222A PDF

    pnp 222A

    Abstract: MJE-5850 MJE5852 MJE5851 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE1502
    Text: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850 MJE5851 MJE5852 MJE5850, MJE5851 MJE5852 r14525 MJE5850/D pnp 222A MJE-5850 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE1502 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850, MJE5851, MJE5852 MJE5851 MJE13007G MJE5850/D PDF

    MJE5850

    Abstract: pnp 222A mje5852 mje5851 transistor mje150 MJE5852G equivalent MJE5851
    Text: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850, MJE5851, MJE5852 MJE5851 MJE5850/D MJE5850 pnp 222A mje5851 transistor mje150 MJE5852G equivalent PDF

    tektronix 475

    Abstract: pnp 222A 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE5851 MJE5852 tr 222a
    Text: ON Semiconductort MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated


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    MJE5850 MJE5851 MJE5852 MJE5850, MJE5851 MJE5852 r14525 MJE5850/D tektronix 475 pnp 222A 1N4934 1N4937 MJE15028 MJE15029 MJE5850 tr 222a PDF

    2sd880 equivalent

    Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They


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    MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100 PDF

    pnp 222A

    Abstract: MJE5850 MJE5851 MJE5852 1N4934 1N4937 MJE15028 MJE15029 mje5851 transistor Motorola AN222A
    Text: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE5850 MJE5851* MJE5852 *  Data Sheet SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS


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    MJE5850/D* MJE5850/D pnp 222A MJE5850 MJE5851 MJE5852 1N4934 1N4937 MJE15028 MJE15029 mje5851 transistor Motorola AN222A PDF

    tip1012

    Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
    Text: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching


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    O-220 221D-02) 340G-01) MJF122 MJF127 MJL3281A MJ14002 MJ14003 MJ10021 MJW16018 tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003 PDF

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


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    2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 PDF

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 PDF

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 PDF

    pnp 222A

    Abstract: JE5850 an222a mje5851 transistor W01 transistor JE5851 JE-15028 JE-1502 je15028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5Ö52* D esigner’s Data Sheet SW ITCHM ODE S e rie s PNP Silico n Pow er T ran sisto rs 8 AMPERE PNP SILICON POWER TRANSISTORS 300,350,400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-volt­


    OCR Scan
    MJE5850, MJE5851 MJE5852 pnp 222A JE5850 an222a mje5851 transistor W01 transistor JE5851 JE-15028 JE-1502 je15028 PDF

    222A Transistor

    Abstract: JE5852
    Text: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5852* D esigner’s Data Sheet S W IT C H M O D E S e rie s PNP S ilic o n P o w e r T ra n s is to rs ‘ Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS


    OCR Scan
    MJE5850/D MJE5850, MJE5851 MJE5852 21A-06 O-220AB 222A Transistor JE5852 PDF

    BOX53C

    Abstract: box54c BOX33C box53b transistor box54c box53a box54 box53 box34c b0808
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Sw itching lcCont V c E O (sus) Amps Max Volts Min 8 Device Type NPN PNP M in/M ax @ lc Am p ts t, US US Max Max fT @ lc Am p PD (Case) MHZ Watts Min @ 25°C 40 2N6386


    OCR Scan
    O-220AB 2N6386 k/20k BDX53 BDX54 BD895 BD896 BD895A BD896A BDX53A BOX53C box54c BOX33C box53b transistor box54c box53a box54 box53 box34c b0808 PDF

    BDX53D

    Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
    Text: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A


    OCR Scan
    2N6044 2N6041 TIP101 TIP106 1k/20k BDX53B BDX54B TIP131 TIP136 1k/15k BDX53D D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8 PDF

    ST-13002

    Abstract: mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009
    Text: SEMICONDUCTOR T EC H N O LO G Y , INC. SE MIC OND UC TO R TECHNOL OGY DSE D I fll3b45fl □ □ □ □ 2 3 3 5 I - 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS


    OCR Scan
    GDDD533 ST44TE5 D44TE5 O-220 ST-12007 MJE-12007 ST-13002 MJE-13002 mje 340 transistor transistor d 13009 transistor mje 13003 transistor d 13007 STH11 ST13003 MJE 5740 STH16006A transistor E 13009 PDF