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Rochester Electronics LLC MJE200STU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200STU	Bulk	99,932		1,665	1 - 10 - 100 - 1000 - 10000 $0.18	Buy Now
onsemi MJE200G TRANS NPN 40V 5A TO126
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200G	Bulk	6,271		1	1 $0.87 10 $0.755 100 $0.5227 1000 $0.37168 10000 $0.29038	Buy Now
Avnet Americas	MJE200G	Bulk		8 Weeks, 4 Days	1	1 $0.814 10 $0.711 100 $0.557 1000 $0.373 10000 $0.373	Buy Now
	MJE200G	Bulk		7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.322	Buy Now
Mouser Electronics	MJE200G		1,014			1 $0.84 10 $0.718 100 $0.523 1000 $0.331 10000 $0.329	Buy Now
Verical	MJE200G		200		22	1 - 10 - 100 $0.8383 1000 $0.8383 10000 $0.8383	Buy Now
Arrow Electronics	MJE200G		200	7 Weeks	1	1 $0.8383 10 $0.7166 100 $0.522 1000 $0.3303 10000 $0.3283	Buy Now

Bristol Electronics	MJE200G		334			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MJE200G		24			1 $0.6414 10 $0.5345 100 $0.5345 1000 $0.5345 10000 $0.5345	Buy Now
	MJE200G		389			1 $1.069 10 $1.069 100 $0.5345 1000 $0.4276 10000 $0.4276	Buy Now
Rochester Electronics	MJE200G		184,531		1	1 $0.3354 10 $0.3354 100 $0.3153 1000 $0.2851 10000 $0.2851	Buy Now
Chip1Stop	MJE200G	Bulk	1			1 $0.544 10 $0.544 100 $0.544 1000 $0.544 10000 $0.544	Buy Now
New Advantage Corporation	MJE200G		1,000		1	1 - 10 - 100 - 1000 $0.4478 10000 $0.4478	Buy Now
onsemi MJE200STU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200STU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MJE200STU		99,932		1	1 $0.182 10 $0.182 100 $0.1711 1000 $0.1547 10000 $0.1547	Buy Now
Flip Electronics	MJE200STU		2,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MJE200TSTU TRANS NPN 25V 5A TO126-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MJE200TSTU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MJE200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MJE200		900			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MJE200		380			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MJE200		395			1 $0.39 10 $0.39 100 $0.26 1000 $0.182 10000 $0.182	Buy Now
	MJE200		30			1 $0.525 10 $0.525 100 $0.42 1000 $0.42 10000 $0.42	Buy Now
	MJE200		3			1 $0.525 10 $0.525 100 $0.525 1000 $0.525 10000 $0.525	Buy Now
	MJE200		720			1 $0.65 10 $0.65 100 $0.65 1000 $0.26 10000 $0.26	Buy Now

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MJE20 Datasheets (151)

Part	Manufacturer	Description	Type	PDF
MJE200	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Original	PDF
MJE200	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor	Original	PDF
MJE200	Motorola	5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS	Original	PDF
MJE200	On Semiconductor	Bipolar Power C77 NPN 5A 25V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500	Original	PDF
MJE200	On Semiconductor	Complementary Silicon Power Plastic Transistors	Original	PDF
MJE200	Central Semiconductor	Silicon Power Transistors, TO-126 Case	Scan	PDF
MJE200	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR	Scan	PDF
MJE200	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Motorola	European Master Selection Guide 1986	Scan	PDF
MJE200	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJE200	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
MJE200	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

MJE200	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJE200	Unknown	Transistor Replacements	Scan	PDF
MJE200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
MJE200	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MJE200	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
MJE200	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

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MJE20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE200 Abstract: 1N5825 MJE210 MSD6100 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D MJE200 1N5825 MJE210 MSD6100
MJE210 Abstract: No abstract text available Text: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE210 65MHz -100mA MJE200 O-126 MJE210
MJE 813 Abstract: MJE205 Text: <^£.mL-C.onaactoi ^Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJE205 (SILICON) MJE205K MEDIUM-POWER NPN SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers	Original	PDF	MJE205 MJE205K 20-Watts MJE105K MJE205-Case MJE205K-Case MJE 813 MJE205
1N5825 Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100 Text: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D 1N5825 MJE200G MJE210G MJE210T MJE210TG MSD6100
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
Untitled Abstract: No abstract text available Text: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON	Original	PDF	MJE200 MJE210 MJE200/D
MJE200G Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225 Text: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS	Original	PDF	MJE200 MJE210 MJE200G MJE210G MJE210T MJE210TG to225
MJE200 Abstract: MJE210 Text: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	PDF	MJE200 65MHz 100mA MJE210 O-126 MJE200 MJE210
Untitled Abstract: No abstract text available Text: MJE2091 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200mÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750	Original	PDF	MJE2091
MJE200 Abstract: MJE210 Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 MJE200 MJE210
MJE200 Abstract: MJE210 NA180 Text: MJE210 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC= -100mA TO-126 • Complement to MJE200 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Collector-Emitter Voltage	Original	PDF	MJE210 65MHz -100mA O-126 MJE200 MJE200 MJE210 NA180
1N5825 Abstract: MJE200 MJE210 MSD6100 Text: ON Semiconductort NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —	Original	PDF	MJE200 MJE210 r14525 MJE200/D 1N5825 MJE200 MJE210 MSD6100
IDA1012 Abstract: 2SA10120 IDA1307 2SA12440 bd94 SOLITRON Text: POWER SILICON PNP Item Number Part Number I C 5 - 10 >= 5 A, SDT3716 SDT3752 SDT3752 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 SDT3703 ~~H~~~ 15 20 SDT3712 SDT3715 SDT3715 SDT3715 SDT3775 SDT3775 SDT3775 SDT3305 ~gH~g~ 25 30 SDT3325 SDT3325 SDT3325 MJE2010	Original	PDF	SDT3716 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 IDA1012 2SA10120 IDA1307 2SA12440 bd94 SOLITRON
bot64 Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091	Original	PDF	MJE1091 MJE2090 MJE2091 BOW64A BOW24A 220AB bot64 B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2

Untitled Abstract: No abstract text available Text: MJE205K Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	MJE205K
Untitled Abstract: No abstract text available Text: MJE2011 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)400u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	MJE2011
Untitled Abstract: No abstract text available Text: MJE205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	MJE205
MJE2160 Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications	OCR Scan	PDF	MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Untitled Abstract: No abstract text available Text: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec	OCR Scan	PDF	7R5R537 MJE200 MJE210 O-126 MJE200-MJE210
MJE200 Abstract: MJE210 Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo	OCR Scan	PDF	MJE200 65MHz 100mA MJE210 O-126 500mA, 200mA 100mA, 10MHz MJE200 MJE210
MJE200 Abstract: MJE210 JE230 Text: MJE200, MJE210 continued ELECTRICAL CH ARACTERISTICS ( T q * 2 5 ° C u nless o th erw ise n oted) C ha rac teristic Sym bol O F F C H A R A C T E R IS T IC S C olle cto r*?:m itter S u s t a in in g V o lt a g e U ) (I q - 10 m A d c , I b = 0) v C E O is u s )	OCR Scan	PDF	MJE200, MJE210 MJE200 MJE210 JE230
MJE200 Abstract: MJE210 Text: MJE200, MJE210 continued PNP MJE210 NPN MJE200 h FE< °C CURRENT G A IN F IG U R E 8 - D C C U R R E N T G A I N lc , C O L L E C T O R C U R R E N T (A M P) y, V O LT AG E (VO LTS) F IG U R E 9 - " O N " V O L T A G E 1C, C O L L E C T O R C U R R E N T (A M P)	OCR Scan	PDF	MJE200, MJE210 MJE200 J-150Â MJE200 MJE210
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO	OCR Scan	PDF	MJE200 65MHz 100mA MJE210
la 4142 Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer Text: SAMSUNG S EM I C ONDU C T OR INC MJE210 14E O J j 71134142 QQGVbTfl 3 \| PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=-100m A Complementary to MJE200	OCR Scan	PDF	MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 MJE200 MJE350 300V transistor pnp 2a 3V to 300V transformer

MJE20 Search Results

MJE20 Price and Stock

Rochester Electronics LLC MJE200STU

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onsemi MJE200STU

onsemi MJE200TSTU

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MJE20 Datasheets (151)

MJE20 Datasheets Context Search

MJE200

MJE210

MJE 813

1N5825

MJE200

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MJE200G

MJE200

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MJE200

MJE200

1N5825

IDA1012

bot64

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MJE2160

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MJE200

MJE200

MJE200

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la 4142