Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MJE13005 ON SEMICONDUCTOR Search Results

    MJE13005 ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE13005 ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE130

    Abstract: 2N2222 NPN Transistor features 2N2905 equivalent 2N2905 MOTOROLA MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching


    Original     		PDF MJE13005/D* MJE13005/D MJE130 2N2222 NPN Transistor features 2N2905 equivalent 2N2905 MOTOROLA MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005

    equivalent mje13005

    Abstract: transistor 2n222 1N493 1N4933 1N5820 2N222 2N2905 MJE13005 MJE200 MJE210
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 r14525 MJE13005/D equivalent mje13005 transistor 2n222 1N493 1N4933 1N5820 2N222 2N2905 MJE13005 MJE200 MJE210

    MJE130

    Abstract: 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210 MR826 core ferroxcube
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching


    Original     		PDF MJE13005/D* MJE13005/D MJE130 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210 MR826 core ferroxcube

    transistor mje13005

    Abstract: equivalent mje13005 MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005 MJE200 MJE210
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching


    Original     		PDF

    equivalent mje13005

    Abstract: No abstract text available
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 equivalent mje13005

    equivalent mje13005

    Abstract: transistor mje13005 application notes MJE13005 2n222 TRANSISTOR mje13005 application notes 1N493 MJE13005 on semiconductor 1N5820 2N222 MJE13005
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 r14525 MJE13005/D equivalent mje13005 transistor mje13005 application notes MJE13005 2n222 TRANSISTOR mje13005 application notes 1N493 MJE13005 on semiconductor 1N5820 2N222 MJE13005

    MJE13005 TRANSISTOR

    Abstract: circuit based on MJE13005 MJE13005 transistor mje13005 mje130
    Text: SEMICONDUCTOR MJE13005 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. F E A R S P Q D B FEATURES ᴌExcellent Switching Times


    Original     		PDF MJE13005 MJE13005 TRANSISTOR circuit based on MJE13005 MJE13005 transistor mje13005 mje130

    equivalent mje13005

    Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
    Text: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13005 MJE13005/D equivalent mje13005 transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G

    MJE13004

    Abstract: MJE1300 MJE13005 056J
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Sustaining Voltage


    Original     		PDF MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E MJE1300 MJE13005 056J

    MJE13004

    Abstract: mje13005 equivalent mje13005 application notes MJE13005
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Sustaining Voltage


    Original     		PDF ISO/TS16949 MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E mje13005 equivalent mje13005 application notes MJE13005

    BD140 application circuits circuits

    Abstract: equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    Original     		PDF MJE13005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BD140 application circuits circuits equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA

    MJE13004

    Abstract: application notes MJE13005 equivalent mje13005 MJE13005
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS


    Original     		PDF MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E application notes MJE13005 equivalent mje13005 MJE13005

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS MJE13004 MJE13005 TO-220 Plastic Package Switchmode Series NPN Silicon Power Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Sustaining Voltage


    Original     		PDF MJE13004 MJE13005 O-220 C-120 MJE13004 MJE13005Rev240402E

    MJE3055 to247

    Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix


    Original     		PDF MJD2955 MJD3055 MJE2955 MJE3055 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJE3055 to247 Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original     		PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    MJ15023 EQUIVALENT

    Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15023 MJ15025 MJ15025 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15023 EQUIVALENT MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    BU108

    Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15022 MJ15024 MJ15024 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100

    JE1300

    Abstract: JE13005 mje130
    Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching


    OCR Scan     		PDF MJE13005/D JE13005* 21A-06 O-220AB JE1300 JE13005 mje130

    MJE13005

    Abstract: No abstract text available
    Text: K EC . SEMICONDUCTOR MJE13005 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. A


    OCR Scan     		PDF MJE13005 MJE13005

    JE13005

    Abstract: E13005 transistor E13005 E1300 transistor hh 004 e13005 2 MJE13005
    Text: SEMICONDUCTOR T E C H N IC A L D A T A MJE13005 tr ip le d iffu s e d n p n t r a n s i s t o r SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES • Excellent Switching Times


    OCR Scan     		PDF JE13005 MJE13005 JE13005 E13005 transistor E13005 E1300 transistor hh 004 e13005 2 MJE13005

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 15E D J - t 3 t 7 S S M 000530*! S | T - 3 3 -J 3 MOTOROLA MJE13004 MJE13005 SEMICONDUCTOR TECHNICAL DATA 4 AM PERE I o s i { » 'n o r s D a t a S h e e t NPN SILICON POWER TRANSISTORS SWITCHMODE S E R IE S NPN SILICO N POWER T R A N SIST O R S


    OCR Scan     		PDF MJE13004 MJE13005

    MJE1300S

    Abstract: JE13005
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13005* Designer’s Data Sheet ‘Motorola Pr»f*rr*d Dcvie« SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    OCR Scan     		PDF JE13005* MJE1300S JE13005