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    Micro Commercial Components MJD122-TP

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122-TP Reel 27,500 2,500
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    onsemi MJD117T4G

    TRANS PNP DARL 100V 2A DPAK
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    DigiKey MJD117T4G Cut Tape 8,702 1
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    MJD117T4G Digi-Reel 8,702 1
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    MJD117T4G Reel 7,500 2,500
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    Mouser Electronics MJD117T4G 10,440
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    Newark MJD117T4G Cut Tape 1,468 5
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    RS MJD117T4G Bulk 2 Weeks 2
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    Onlinecomponents.com MJD117T4G 2,500
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    Rochester Electronics MJD117T4G 182 1
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    ComSIT USA MJD117T4G 2,295
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    Avnet Asia MJD117T4G 10,000 11 Weeks 2,500
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    New Advantage Corporation MJD117T4G 47,500 1
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    Win Source Electronics MJD117T4G 12,000
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    onsemi MJD128T4G

    TRANS PNP DARL 120V 8A DPAK
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    DigiKey MJD128T4G Digi-Reel 5,219 1
    • 1 $1.56
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    MJD128T4G Cut Tape 5,219 1
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    MJD128T4G Reel 2,500 2,500
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    Avnet Americas MJD128T4G Reel 10 Weeks 2,500
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    Mouser Electronics MJD128T4G 5,756
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    Onlinecomponents.com MJD128T4G
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    Avnet Silica MJD128T4G 11 Weeks 2,500
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    onsemi MJD122T4G

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122T4G Reel 5,000 2,500
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    Avnet Americas MJD122T4G Reel 62,500 10 Weeks 2,500
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    MJD122T4G Ammo Pack 36 Weeks, 1 Days 1
    • 1 $0.497
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    Mouser Electronics MJD122T4G 8,231
    • 1 $1.15
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    Newark MJD122T4G Cut Tape 5,000 1
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    Onlinecomponents.com MJD122T4G 5,000
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    Bristol Electronics MJD122T4G 2,207
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    TME MJD122T4G 1,567 1
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    Ameya Holding Limited MJD122T4G 3,441
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    ComSIT USA MJD122T4G 809
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    Chip 1 Exchange MJD122T4G 35,822
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    Avnet Asia MJD122T4G 10 Weeks 5,000
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    Avnet Silica MJD122T4G 5,000 11 Weeks 2,500
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    Chip-Germany GmbH MJD122T4G 430
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    EBV Elektronik MJD122T4G 12 Weeks 2,500
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    IBS Electronics MJD122T4G 120 120
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    Master Electronics MJD122T4G 5,000
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    Win Source Electronics MJD122T4G 74,999
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    onsemi NJVMJD128T4G

    TRANS PNP DARL 120V 8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD128T4G Digi-Reel 4,779 1
    • 1 $1.19
    • 10 $0.746
    • 100 $1.19
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    NJVMJD128T4G Cut Tape 4,779 1
    • 1 $1.19
    • 10 $0.746
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    • 1000 $0.34573
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    NJVMJD128T4G Reel 2,500 2,500
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    Avnet Americas NJVMJD128T4G Reel 8 Weeks 2,500
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    MJD1 Datasheets (187)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJD112 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    MJD112 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    MJD112 Korea Electronics TRANS DARLINGTON NPN 100V 2A 3DPACK Original PDF
    MJD112 Motorola SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Original PDF
    MJD112 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD112 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original PDF
    MJD112 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original PDF
    MJD112 Korea Electronics Darlington Transistor Scan PDF
    MJD112 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJD112 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MJD112 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 2A, 100V, Pkg Style DPAK Scan PDF
    MJD112-001 On Semiconductor Power 2A 100V Darlington NPN Original PDF
    MJD112-001 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD112-001G On Semiconductor TRANS DARLINGTON NPN 100V 2A 3DPAK(Case 369D) RAIL Original PDF
    MJD112-001G On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 369D-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD1121 Motorola SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Original PDF
    MJD112-1 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112-1 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF
    ...

    MJD1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MJD122

    Abstract: TIP125-TIP127 mjd122g
    Text: MJD122, MJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES


    Original
    MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g PDF

    MJD122

    Abstract: TIP122
    Text: MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating


    Original
    MJD122 O-252) TIP122 13-Apr-07 O-252 MJD122 TIP122 PDF

    MJD122T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original
    MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 PDF

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original
    MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD122 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    MJD122 PDF

    1N5825

    Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 MJD117-1G
    Text: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,


    Original
    MJD112 MJD117 TIP31 TIP32 MJD112/D 1N5825 369D MJD112 MJD112G MJD117 MSD6100 MJD117-1G PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD117 MJD117 D-PACK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP117


    Original
    MJD117 TIP117 PDF

    1N5825

    Abstract: MJD112 MJD117 MSD6100 TIP110 TIP117 MJD112-D TIP110-TIP117
    Text: ON Semiconductort NPN MJD112* Complementary Darlington Power Transistors PNP MJD117* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,


    Original
    MJD112* MJD117* TIP110 TIP117 r14525 MJD112/D 1N5825 MJD112 MJD117 MSD6100 MJD112-D TIP110-TIP117 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127


    Original
    MJD127 TIP127 MJD122 MJD122 MJD127TF O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD117 MJD117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117


    Original
    MJD117 TIP117 TIP117 MJD117TF O-252 PDF

    MJD1222

    Abstract: mjd907
    Text: MJD907 MJD907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in a Damper Diode at E-C Darlington TR Complement to MJD1222 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original
    MJD907 MJD1222 MJD1222 mjd907 PDF

    J148G

    Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
    Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


    Original
    MJD148 MJD148/D J148G j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor PDF

    D112

    Abstract: MJD112 D-PAK package
    Text: SEMICONDUCTOR MJD112 MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D112 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D112 MJD112 3 hFE Grade 4 Lot No. 99.12.16 Revision No : Year 0 ~ 9 : 2000~2009


    Original
    MJD112 D112 MJD112 D-PAK package PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD112 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    MJD112 PDF

    MJD112

    Abstract: DIODE T4 symbol NPN Silicon Power Transistor DPAK MJD117 TIP112 TIP117
    Text: MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL


    Original
    MJD112 MJD117 O-252 TIP112 TIP117 MJD112 MJD117 DIODE T4 symbol NPN Silicon Power Transistor DPAK TIP117 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR(NPN) FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C


    Original
    O-251/TO-252-2L MJD122 O-251 O-252-2L TIP122 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    O-252 MJD127 TIP127 -100V -16mA -80mA PDF

    morocco tip122

    Abstract: TIP127 Application Note TO252 MJD122 MJD127 TIP122 TIP127 st morocco tip122
    Text: MJD122 MJD127  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL


    Original
    MJD122 MJD127 O-252 TIP122 TIP127 MJD122 MJD127 morocco tip122 TIP127 Application Note TO252 TIP127 st morocco tip122 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J D High DC Current Gain. Low Collector-Emitter Saturation Voltage. K Q Straight Lead IPAK, "L" Suffix


    Original
    MJD112/L MJD117/L. PDF

    j148g

    Abstract: No abstract text available
    Text: MJD148, MJD148T4G NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • High Gain Low Saturation Voltage High Current Gain − Bandwidth Product


    Original
    MJD148, NJVMJD148T4G AEC-Q101 MJD148/D j148g PDF

    MJD127T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS


    Original
    MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127 PDF

    TRANSISTOR tip122

    Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
    Text: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122


    Original
    MJD122 TIP122 MJD127 TRANSISTOR tip122 QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn PDF

    Untitled

    Abstract: No abstract text available
    Text: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    MJD122 O-251/TO-525-2L O-251 TIP122 O-252-2L PDF

    TS 4142

    Abstract: W1000 MJD127 TIP127
    Text: SAMSUNG ELECTRONICS INC MJD127 M2E D Bi 7=31,4142 000=1021, Ö Œ S M G K PNP SILICON DARLINGTON TRANSÌSTOR "T'33> -3' D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H ig h D C Current G ain Built-in a D am p e r D io d e at E-C L e ad F o rm e d tor S u rfa c e M o u n t A p p lic a tio n s N o Suffix


    OCR Scan
    MJD127 TIP127 -30VE le-250 TS 4142 W1000 TIP127 PDF