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    MJ1400 Price and Stock

    onsemi MJ14002G

    Bipolar Transistors - BJT 60A 80V 300W NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MJ14002G 100
    • 1 $18.74
    • 10 $13.83
    • 100 $10.93
    • 1000 $10.74
    • 10000 $10.74
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    Onlinecomponents.com MJ14002G 100
    • 1 -
    • 10 $13.05
    • 100 $11
    • 1000 $10.4
    • 10000 $10.4
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    ComSIT USA MJ14002G 7
    • 1 -
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    Avnet Silica MJ14002G 7 Weeks 100
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    Chip1Stop MJ14002G 270
    • 1 $39.3
    • 10 $39.3
    • 100 $23.7
    • 1000 $23.7
    • 10000 $23.7
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    EBV Elektronik MJ14002G 8 Weeks 100
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    Wuhan P&S MJ14002G 270 1
    • 1 $29.98
    • 10 $29.98
    • 100 $19.14
    • 1000 $14.51
    • 10000 $14.51
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    New Jersey Semiconductor Products Inc MJ14001

    Bipolar Junction Transistor, PNP Type, TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ14001 1,942
    • 1 $19.6
    • 10 $19.6
    • 100 $19.6
    • 1000 $10.29
    • 10000 $10.29
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    New Jersey Semiconductor Products Inc MJ14002

    Bipolar Junction Transistor, NPN Type, TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ14002 1,661
    • 1 $13.728
    • 10 $13.728
    • 100 $13.728
    • 1000 $11.088
    • 10000 $10.56
    		Buy Now

    National Semiconductor Corporation MJ14002

    Bipolar Junction Transistor, NPN Type, TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ14002 200
    • 1 $13.5
    • 10 $13.5
    • 100 $10.5
    • 1000 $9.6
    • 10000 $9.6
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    MIX MJ14003

    Bipolar Junction Transistor, PNP Type, TO-204AE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MJ14003 92
    • 1 $14.625
    • 10 $14.625
    • 100 $11.375
    • 1000 $11.375
    • 10000 $11.375
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    Find more MJ1400 price and stock on Findchips.com

    MJ1400 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJ14000 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=15 / fT(Hz)=- / Pwr(W)=300 Original PDF
    MJ14000 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ14000 Diode Transistor Transistor Short Form Data Scan PDF
    MJ14000 Motorola European Master Selection Guide 1986 Scan PDF
    MJ14000 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ14000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ14000 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ14000 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ14000 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF
    MJ14001 Motorola 60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300 Original PDF
    MJ14001 On Semiconductor MJ14001 - TRANSISTOR 60 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA, CASE 197A-05, TO-3, TO-204, 2 PIN, BIP General Purpose Power Original PDF
    MJ14001 On Semiconductor High Current Complementary Silicon Power Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300 Original PDF
    MJ14001 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=70 / Hfe=100typ / fT(Hz)=- / Pwr(W)=300 Original PDF
    MJ14001 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ14001 Diode Transistor Transistor Short Form Data Scan PDF
    MJ14001 Motorola European Master Selection Guide 1986 Scan PDF
    MJ14001 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ14001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ14001 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ14001 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    MJ1400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ14002

    Abstract: MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT
    Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes


    Original     		PDF MJ14001/D* MJ14001/D MJ14002 MJ14001 MJ14003 COMPLEMENTARY SILICON POWER TRANSISTORS 200CT

    2n1243

    Abstract: 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 20 Ic Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max (Oe) Package Style >= 50 A, (Cont'd) SDT3901 SDT3602 SDT3602 SDT3902 SDT3902 SDT3902 MJ14001 SDT3603


    Original     		PDF 10uAxial 220AB 2n1243 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239

    MJ14001

    Abstract: No abstract text available
    Text: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14001 O204AE) 1-Aug-02 MJ14001

    Untitled

    Abstract: No abstract text available
    Text: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14000 O204AE) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14003 O204AE) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14003 O204AE) 18-Jun-02

    mj14002

    Abstract: mj14003
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •


    Original     		PDF MJ14001 MJ14002* MJ14003* mj14002 mj14003

    MJ14002

    Abstract: No abstract text available
    Text: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14002 O204AE) 1-Aug-02 MJ14002

    MJ14003

    Abstract: MJ14001 MJ14002 mj1400x transistor pnp 3015
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors http://onsemi.com Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • •


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14001/D MJ14003 MJ14001 MJ14002 mj1400x transistor pnp 3015

    MJ14003 equivalent

    Abstract: BU108 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes


    Original     		PDF MJ14002* MJ14001 MJ14003* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ14003 equivalent BU108 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D

    Untitled

    Abstract: No abstract text available
    Text: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14001 O204AE) 18-Jun-02

    MJ14000

    Abstract: No abstract text available
    Text: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14000 O204AE) 18-Jun-02 MJ14000

    1000 volt npn

    Abstract: MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003
    Text: MJ14001 PNP , MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes


    Original     		PDF MJ14001 MJ14002* MJ14003* MJ14002/03 MJ14001/D 1000 volt npn MJ14001 equivalent MJ14002G MJ14001 MJ14001G MJ14002 MJ14003

    MJ14003

    Abstract: No abstract text available
    Text: MJ14003 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14003 O204AE) 1-Aug-02 MJ14003

    Untitled

    Abstract: No abstract text available
    Text: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14002 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ14002 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14002 O204AE) 17-Jul-02

    mj14000

    Abstract: No abstract text available
    Text: MJ14000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14000 O204AE) 1-Aug-02 mj14000

    MJ14002

    Abstract: MJ14003 MJ14003 equivalent MJ14001 Mj140
    Text: ON Semiconductort NPN High-Current Complementary Silicon Power Transistors MJ14002 * . . . designed for use in high–power amplifier and switching circuit applications, MJ14003 * PNP MJ14001 • High Current Capability — • • *ON Semiconductor Preferred Device


    Original     		PDF MJ14002 MJ14003 MJ14001 r14525 MJ14001/D MJ14002 MJ14003 MJ14003 equivalent MJ14001 Mj140

    Untitled

    Abstract: No abstract text available
    Text: MJ14001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF MJ14001 O204AE) 17-Jul-02

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    mj14003

    Abstract: mj14002 J14002
    Text: MOTOROLA Order this document by MJ14001/D SEMICONDUCTOR TECHNICAL DATA NPN M J1 4 002* PNP High-C urrent Com plem entary Silicon Power Transistors M J14001 M J1 4 003* . . . designed for use in high-pow er amplifier and switching circuit applications, •


    OCR Scan     		PDF MJ14001/D J14001 MJ14001 97A-05 O-204AE mj14003 mj14002 J14002

    J14002

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ14002* PNP MJ14001 MJ14003* High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications, • • • High Current Capability — lc Continuous = 60 Amperes


    OCR Scan     		PDF MJ14002* MJ14001 MJ14003* MJ14002 MJ14003 10tol00 J14002

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB 37E LTD 0133167 » SEMELAB J U L 0 6 1988 MJ14000 MJ14002 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for switching applications and high power amplifier circuits M E C H A N IC A L D A T A Dim ensions in mm FEATURES « -1 6 • 15 A lo w v ce|sat,


    OCR Scan     		PDF MJ14000 MJ14002 MJ14000 00002E7