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    MJ 2955 Search Results

    MJ 2955 Result Highlights (6)

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    LTC2955CTS8-1#TRMPBF Analog Devices Pushbutton On/Off Cntr w/ Auto Visit Analog Devices Buy
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    MJ 2955 Price and Stock

    NTE Electronics Inc MJ2955

    TRANS PNP 60V 15A TO3
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    DigiKey MJ2955 Bag 123 1
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    onsemi MJ2955G

    TRANS PNP 60V 15A TO204
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    Avnet Americas MJ2955G Bulk 9 Weeks, 1 Days 1
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    Solid State Inc MJ2955

    TRANS PNP 60V 15A TO3
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    STMicroelectronics MJ2955

    TRANS PNP 60V 15A TO3
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    Central Semiconductor Corp MJ2955 PBFREE

    TRANS PNP 70V 15A TO3
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    MJ 2955 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJ2955 Motorola 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 On Semiconductor Complementary Silicon Power Transistors Original PDF
    MJ2955 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 STMicroelectronics Complementary power transistors Original PDF
    MJ2955 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 USHA PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 USHA Silicon power transistor. General purpose switching and amplifier applications. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, Ib = 7Adc. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 Various Russian Datasheets Transistor Original PDF
    MJ2955 Wing Shing Computer Components PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Original PDF
    MJ2955 Boca Semiconductor COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Scan PDF
    MJ2955 Central Semiconductor Leaded Power Transistor General Purpose, TO-3 Scan PDF
    MJ2955 Continental Device India TO-3 Power Package Transistors Scan PDF
    MJ2955 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    MJ2955 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ2955 Diode Transistor Transistor Short Form Data Scan PDF
    MJ2955 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    MJ2955 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    MJ2955 General Electric Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Scan PDF
    MJ2955 Mospec Complementary Silicon Power Transistor Scan PDF
    MJ2955 Mospec POWER TRANSISTORS(15A,50V,115W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20-70 / fT(Hz)=2.5M / Pwr(W)=115 Scan PDF

    MJ 2955 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPF12

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L SPF12

    Untitled

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L

    2sk3773

    Abstract: 2SK3773-01MR sd 2955
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F dV/d200 2sk3773 2SK3773-01MR sd 2955

    Untitled

    Abstract: No abstract text available
    Text: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3772-01 O-220AB

    300v 32a mosfet

    Abstract: No abstract text available
    Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F Repetitive200 300v 32a mosfet

    diode sj

    Abstract: 2SK3774-01L
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L diode sj

    2SK3772-01

    Abstract: No abstract text available
    Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3772-01 O-220AB 2SK3772-01

    2SK3772-01

    Abstract: No abstract text available
    Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3772-01 O-220AB 2SK3772-01

    2sk3773

    Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F 2sk3773 12/24 v dc-dc converter schematic 2SK3773-01MR

    2955 mos

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3774-01L 2955 mos

    2SK3775-01

    Abstract: No abstract text available
    Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3775-01 2SK3775-01

    fr 2955

    Abstract: 2SK3775-01
    Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3775-01 fr 2955 2SK3775-01

    Untitled

    Abstract: No abstract text available
    Text: StrongIRFET IRFP7718PbF Application  Brushed Motor drive applications  BLDC Motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches


    Original     		PDF IRFP7718PbF O-247 JESD47F) O-247AC

    a2955

    Abstract: 2955 mosfet 2955 SOT-223
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management


    Original     		PDF NTF2955 OT-223 OT-223 a2955 2955 mosfet 2955 SOT-223

    2955G

    Abstract: NTF2955T1G NTF2955 NTF2955T1
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V


    Original     		PDF NTF2955 OT-223 NTF2955/D 2955G NTF2955T1G NTF2955 NTF2955T1

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTF2955, NVF2955, NVF2955P OT-223 NTF2955/D 2955g NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G

    transistor mj 3055

    Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
    Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •


    OCR Scan     		PDF D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan     		PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


    OCR Scan     		PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    MJ15015

    Abstract: MJ15016 2N3055A 2N30 MJ 2n3055 2N3055 J15016 MJ2955 MJ2955A
    Text: ÆàMOSPEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS . Power Base complementary transistors designed for high power audio, stepping motor and other linear application. These devices can also be used in power switching circuits such as relay or solenoid drivers,inverter


    OCR Scan     		PDF 2N3055 MJ2955. 2N3055A MJ2955A MJ15015 MJ15016 J15016 2N30 MJ 2n3055 MJ2955

    P2955E

    Abstract: 2955E TP2955E TP2955 sped sipa
    Text: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES


    OCR Scan     		PDF MTP2955E/D 8S036. MTP2955BD P2955E 2955E TP2955E TP2955 sped sipa

    2955v

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 2955V TM OS V™ Pow er Field E ffect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF MTP2955V/D 2955v

    BTA08-600C equivalent

    Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
    Text: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B


    OCR Scan     		PDF Z0409ME Z0409MF Z0409NE Z0409NF Z0410BE Z0410BF Z0410DE Z0410DF Z0410ME Z0410MF BTA08-600C equivalent BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465