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    Rochester Electronics LLC NVTP2955G

    MOSFET 60V 12A 196
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    DigiKey NVTP2955G Bulk 3,974 650
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    onsemi MJF2955G

    TRANS PNP 90V 10A TO-220FP
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    onsemi MJ2955G

    TRANS PNP 60V 15A TO204
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    DigiKey MJ2955G Tray 170 1
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    Newark MJ2955G Bulk 116 1
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    IBS Electronics MJ2955G 3,400 100
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    Master Electronics MJ2955G 100
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    New Advantage Corporation MJ2955G 200 1
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    onsemi MJD2955G

    TRANS PNP 60V 10A DPAK
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    DigiKey MJD2955G Tube 135 1
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    Rochester Electronics MJD2955G 75 1
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    TME MJD2955G 32 1
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    Ameya Holding Limited MJD2955G 248
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    Chip-Germany GmbH MJD2955G 248
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    onsemi NTD2955G

    MOSFET P-CH 60V 12A DPAK
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    2955G Datasheets Context Search

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    PDF

    2955g

    Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    NTF2955, NVF2955, NVF2955P OT-223 NTF2955/D 2955g NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    NTF2955, NVF2955, NVF2955P OT-223 AEC-Q101 NTF2955/D PDF

    NTF2955T1G

    Abstract: No abstract text available
    Text: NTF2955, NVF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC−Q101 Qualified − NVF2955 These Devices are Pb−Free and are RoHS Compliant


    Original
    NTF2955, NVF2955 NTF2955/D NTF2955T1G PDF

    nt 2955g

    Abstract: 2955g
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NVD2955 NTD2955/D nt 2955g 2955g PDF

    2955G

    Abstract: NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10
    Text: NTF2955, NTF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Packages are Available Applications • • • • Power Supplies


    Original
    NTF2955, NTF2955P OT-223 NTF2955/D 2955G NTF2955P NTF2955T1G NTF2955 NTF2955T1 MS10 PDF

    nt2955g

    Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01
    Text: NTD2955, NTD2955P, STD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, STD2955 NTD2955/D nt2955g NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01 PDF

    nt2955g

    Abstract: nt 2955g
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g PDF

    Untitled

    Abstract: No abstract text available
    Text: , f il e COPY 2 955-<2096 NOTES: 1. M A TIN G : Interface dimensions per Mil-C-39012/SMA series and Solitron/Microwave M D - 1 0 7 . 2. MATERIAL: Coupling Nut and Body: - - - - - - Stainless Steel per ASTM-A582, Type 303, Cond. A. Contact and Lock R i n g :— Beryllium Copper per QQ-C-530,


    OCR Scan
    Mil-C-39012/SMA ASTM-A582, QQ-C-530, Mil-P-19468 L-P-403, ZZ-R-765, Mil-G-45204, Mil-C-26074, Mil-C-14550, PDF

    2955G

    Abstract: NTF2955T1G NTF2955 NTF2955T1
    Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V


    Original
    NTF2955 OT-223 NTF2955/D 2955G NTF2955T1G NTF2955 NTF2955T1 PDF

    nt2955g

    Abstract: nt 2955g 2955G
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G PDF

    nt2955g

    Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T
    Text: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G ntd2955g NTP2955G NVD2955T4G NTD2955T PDF

    2955g

    Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D
    Text: NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge


    Original
    NTD2955, NTD2955P NTD2955/D 2955g nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power


    Original
    NTD2955, NVD2955 NTD2955/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant


    Original
    NTF2955, NVF2955, NVF2955P NTF2955/D PDF