Microwave Switch Technology: Part 2
Abstract: No abstract text available
Text: PAGE 34 • JUNE 2009 FEATURE ARTICLE www.mpdigest.com Solid State RF/Microwave Switch Technology: Part 2 by Rick Cory and Dave Fryklund, Skyworks Solutions, Inc. Introduction n part 1 we discussed an overview of RF/microwave switch topologies, PIN diode theory of operation, and
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APN1002,
Microwave Switch Technology: Part 2
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Microwave oscillator
Abstract: microwave
Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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FMCW
Abstract: No abstract text available
Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description
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HMCAD1512
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Text: OFF-THE-SHELF March 2013 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Follow Us Live at OFC/NFOEC on Twitter @HittiteMWCorp See Page 2 for Details. 14 New Featured Products! 8-Bit 450/900 MSPS A/D Converter New Product Line Signal Conditioners for Fiber Optics
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HMC6545LP5E
NL-0113
HMCAD1512
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BTS antenna structure
Abstract: hmc192 HMC18214 hittite cross HMC187MS8 HMC165S14 HMC172QS24 HMC173MS8 HMC175MS8 HMC183QS24
Text: MICROWAVE CORPORATION GaAs MMICs FOR CHANGING BASESTATION REQUIREMENTS FEBRUARY 2000 GAAS MMICS FOR CHANGING BASE STATION REQUIREMENTS oday wireless infrastructure designers are being faced with increasingly challenging requirements. Cellular base transceiver stations BTS , or base station, are becoming smaller,
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HMC175MS8
HMC187MS8
BTS antenna structure
hmc192
HMC18214
hittite cross
HMC187MS8
HMC165S14
HMC172QS24
HMC173MS8
HMC175MS8
HMC183QS24
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Text: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W Series resistance as low as 0.25 Ω Carrier lifetime greater than 2.5 µs
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UM7000
UM7100
UM7200
UM7000)
UM7200
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Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
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UM2102
Abstract: UM2100 UM2101 UM2104 UM2106 UM2108 UM2110
Text: UM2100 TM ATTENUATOR AND POWER PIN DIODES 2 – 30 MHz RoHS Compliant Versions Available KEY FEATURES UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band 2-30MHz and below. As series configured switches, these long lifetime (25 s typical) diodes
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UM2100
2-30MHz)
UM2102
UM2101
UM2104
UM2106
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UM2110
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sp8t rf switch
Abstract: HMC241 HMC241QS16 HMC182S14 mesfet lnb HMC165S14 HMC252QS24 HMC253QS24 PLCC28 QSOP16
Text: MICROWAVE CORPORATION POSITIVE BIAS MULTI-THROW SWITCHES w/INTEGRATED DECODERS FEBRUARY 2001 POSITIVE BIAS GAAS MULTITHROW SWITCHES WITH INTEGRATED TTL DECODERS D istribution and reception of digital, video and voice information has become an essential part of our daily routine. We use a network of fiber-to-RF cable to
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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
Abstract: 180NM IBM
Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE
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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
180NM IBM
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LD79A02K
Abstract: NEC RF Switch 1998 NEC RF Switch
Text: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.
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LD79A02K
LD79A02K
NEC RF Switch 1998
NEC RF Switch
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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cordless phone Transceiver IC
Abstract: DECT RF Transceiver 1.9 ghz LNA 2.4GHZ bluetooth Saw filter wlan 2.4Ghz LMX3162 DECT transceiver 2.4 cordless phone Transceiver IC dect module 24GHz amplifier RF 2.4Ghz antenna
Text: N LMX3162: Enabling 2.4GHz Applications February 23, 1999 1 Agenda • The news: LMX3162 • National and wireless • The 2.4GHz opportunity – Data, WLAN and the emerging home networking market – Traditional “cordless” applications • LMX3162 2.4GHz transceiver
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LMX3162:
LMX3162
LMX3162
cordless phone Transceiver IC
DECT RF Transceiver 1.9 ghz
LNA 2.4GHZ bluetooth
Saw filter wlan 2.4Ghz
DECT transceiver
2.4 cordless phone Transceiver IC
dect module
24GHz amplifier
RF 2.4Ghz antenna
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HMC676LC3C
Abstract: No abstract text available
Text: OFF-THE-SHELF MARCH 2008 New DC to Millimeterwave ICs & Modules from Hittite Hittite Opens New Sales Office in Japan! See Page 7 25 New Products Produc Released! Product P d t Showcase Sh 0.2 - 4 GHz High IP3 Amp HIGH SPEED DIGITAL LOGIC & LATCHED COMPARATORS RELEASED!
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X-band antenna
Abstract: L0408-67 Logarithmic Amplifier nf transistor array x-Band High Power Amplifier L0204-70 L0208-65 PA010020-33
Text: From Aeroflex Plainview: A passion for performance. Space-qualified RF switches Broadband microwave power amplifiers Low-phase noise amplifiers and multipliers Highly-integrated microwave assemblies RF and Microwave Products Advancing microwave technology through innovative
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SWSPDT-0005060-40
SWSPDT-002025-60
TX-0209-25
X-band antenna
L0408-67
Logarithmic Amplifier
nf transistor array
x-Band High Power Amplifier
L0204-70
L0208-65
PA010020-33
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Abstract: No abstract text available
Text: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features • Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads
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MASW-010646
MASW-010646
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Text: OFF-THE-SHELF February 2012 Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Hittite Exhibiting at OFC 2012! View Hittite’s expanded product offerings at OFC in Los Angeles, CA, March 6 to 8, 2012. Booth #2050 30 New Featured Products!
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HMC1032LP6GE
HMC1034LP6GE
NL-0212
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Abstract: No abstract text available
Text: Applications • Tx/Rx and diversity – WLAN/Bluetooth – Energy management – RFID –UHF/VHF: public safety bands • WCDMA handsets and data cards • 3G/4G wireless networks • LNB/DBS matrix • Microwave applications up to 8 GHz • Multi-antenna
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A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology
Abstract: No abstract text available
Text: 200 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 22, NO. 4, APRIL 2012 A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Christophe Masse, William Vaillancourt, and
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A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology
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Abstract: No abstract text available
Text: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features • Rev. V2 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 13 W CW Power, +85°C Die with G-S-G RF Pads and DC Bias Pads
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COBRA RF
Abstract: GaN amplifier microwave transceiver applications of vlsi in antennas mmic A pittman radar match filter design Types of Radar Antenna 1000X front-end radar
Text: THE ROAD FROM RFIC TO SOC T wenty years ago, the microwave semiconductor industry in the US and subsequently all over the world got a boost from the Defense Advanced Research Procurement Activity, DARPA’s $600 M MIMIC Microwave and Millimeter-wave Monolithic
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