Untitled
Abstract: No abstract text available
Text: FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode Features General Description • 4 A, 20 V RDS ON = 100 mΩ @ VGS = 4.5 V RDS(ON) = 150 mΩ @ VGS = 2.5 V ■ Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm FDFM2N111 combines the exceptional performance of Fairchild’s
|
Original
|
PDF
|
FDFM2N111
|
Untitled
Abstract: No abstract text available
Text: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
FDMA430NZ
|
Untitled
Abstract: No abstract text available
Text: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds on and
|
Original
|
PDF
|
FDM6296
|
FDME0106NZT
Abstract: fdme0106 PF203
Text: FDME0106NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
|
Original
|
PDF
|
FDME0106NZT
FDME0106NZT
fdme0106
PF203
|
FDMC6296
Abstract: No abstract text available
Text: Single N-Channel Logic-Level Power Trench MOSFET 30 V, 11.5 A, 10.5 mΩ Features General Description Max rDS on = 10.5 mΩ at VGS = 10 V, ID = 11.5 A This single N-Channel MOSFET in the thermally efficient MicroFET Package has been specifically designed to perform
|
Original
|
PDF
|
|
FDMC3300NZA
Abstract: mosfet
Text: FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET 8A,20V,26mΩ General Description Features This Dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5v on special MicroFET
|
Original
|
PDF
|
FDMC3300NZA
FDMC3300NZA
mosfet
|
Untitled
Abstract: No abstract text available
Text: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description ̈ Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
|
Original
|
PDF
|
FDME820NZT
|
FDFM2P110
Abstract: MO-229
Text: FDFM2P110 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Features General Description • –3.5 A, –20 V RDS ON = 140 mΩ @ VGS = –4.5 V RDS(ON) = 200 mΩ @ VGS = –2.5 V ■ Low Profile – 0.8mm maximum – in the new package MicroFET 3x3 mm
|
Original
|
PDF
|
FDFM2P110
FDFM2P110
MO-229
|
FDMA420NZ
Abstract: FDMA430NZ MO-229
Text: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
FDMA430NZ
FDMA420NZ
MO-229
|
FDM6296
Abstract: No abstract text available
Text: FDM6296 Single N-Channel, Logic-Level, PowerTrench MOSFET Features General Description • 11.5 A, 30 V RDS ON = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MicroFET 3.3 x 3.3 mm
|
Original
|
PDF
|
FDM6296
FDM6296
|
mosfet 50a 25v to 252
Abstract: No abstract text available
Text: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V,5.0A,40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
FDMA430NZ
FDMA420NZ
mosfet 50a 25v to 252
|
SO8 package fairchild
Abstract: No abstract text available
Text: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features tm General Description ̈ Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform
|
Original
|
PDF
|
FDM6296
FDM6296
|
FDM6296
Abstract: No abstract text available
Text: FDM6296 Single N-Channel Logic-Level PowerTrench MOSFET 30V,11.5A, 10.5mΩ Features tm General Description Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform
|
Original
|
PDF
|
FDM6296
FDM6296
|
|
|
SO8 package fairchild
Abstract: 021L2
Text: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 mΩ Features General Description Max rDS on = 18 mΩ at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
|
Original
|
PDF
|
FDME820NZT
|
Untitled
Abstract: No abstract text available
Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
|
Original
|
PDF
|
FDME430NT
|
SO8 package fairchild
Abstract: so8 pcb pattern microfet
Text: February 2002 Application Note 7527 Dual Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new dual MicroFET™ 3x2 package with two exposed drain pads provides a true surface-mount alternative that greatly improves thermal characteristics, high current handling capability and low on-resistance. These
|
Original
|
PDF
|
|
ipc 610D
Abstract: IPC-SM-7525A IPC-7525 IPC610D JSTD001D Intel reflow soldering profile BGA IPC-4101B Lead Free reflow soldering profile BGA J-STD-001C IPC-A-610D
Text: Application Note AN9047 Assembly Guidelines for MicroFET-6 Packaging By Dennis Lang INTRODUCTION The Fairchild MicroFET-6 is a 2mm x 2mm package is based on Molded Leadless Packaging MLP technology. This technology has been increasingly used in packaging for power related
|
Original
|
PDF
|
AN9047
IPC-SM-7525A,
JESD22-B102D,
FPF1007,
FPF1008,
FPF1009,
FPF2140,
FPF2142,
FPF2143,
FPF2144,
ipc 610D
IPC-SM-7525A
IPC-7525
IPC610D
JSTD001D
Intel reflow soldering profile BGA
IPC-4101B
Lead Free reflow soldering profile BGA
J-STD-001C
IPC-A-610D
|
Untitled
Abstract: No abstract text available
Text: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40m: General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
|
FDMA430NZ
Abstract: MO-229
Text: FDMA430NZ Single N-Channel 2.5V Specified PowerTrench MOSFET 30V,5.0A,40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
FDMA430NZ
MO-229
|
FDMA520PZ
Abstract: No abstract text available
Text: FDMA520PZ tm Single P-Channel PowerTrench MOSFET –20V, –7.3A, 30mΩ Features General Description Max rDS on = 30mΩ at VGS = –4.5V, ID = –7.3A Max rDS(on) = 53mΩ at VGS = –2.5V, ID = –5.5A Low profile - 0.8mm maximum - in the new package MicroFET
|
Original
|
PDF
|
FDMA520PZ
FDMA520PZ
|
FDMA430NZ
Abstract: marking 430
Text: FDMA430NZ tm Single N-Channel 2.5V Specified PowerTrench MOSFET 30V, 5.0A, 40mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS on @VGS=2.5V on special MicroFET
|
Original
|
PDF
|
FDMA430NZ
FDMA430NZ
marking 430
|
OFET
Abstract: No abstract text available
Text: January 2006 SEM IC O N D U C TO R FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special MicroFET
|
OCR Scan
|
PDF
|
FDMA430NZ
OFET
|