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    MGFX38V0510 Search Results

    MGFX38V0510 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFX38V0510 Unknown FET Data Book Scan PDF

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    MGFX38V0510

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i MGFX38V0510 ! i_ lQ .S ~ ll.O G H i: BAWD 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFX38V0510 is an internally impedance matched GaAs power F E T especially designed for use in 10.5~ 11.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFX38V0510 MGFX38V0510

    MGFK30M4045

    Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
    Text: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228


    OCR Scan     		PDF MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ

    Untitled

    Abstract: No abstract text available
    Text: ^M ITSUBISHI MGFX38XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFX38XXXX products are internally impedance matched devices for use in X-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 6W (TYP) • High linear power gain


    OCR Scan     		PDF MGFX38XXXX MGFX38XXXX 38V9095-01 FX38V9095-51 FX38V FX38V0005-01