Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W 20.4±0.2 DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
17GHz
17GHz
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W 20.4±0.2 DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
17GHz
17GHz
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F217
Abstract: MGFS48B2122 GAAS FET AMPLIFIER 1115a
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET DESCRIPTION OUTLINE 20.4±0.2 The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
17GHz
17GHz
25deg
22dBm
39dBm
F217
GAAS FET AMPLIFIER
1115a
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GAAS FET AMPLIFIER
Abstract: Band Power GaAs FET "GaAs FET" 60W 12V flammable RF push pull power amplifier MGFS48B2122 39dBm F217
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET ' 6&5,37,21 OUTLINE r The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
17GHz
17GHz
25deg
22dBm
39dBm
GAAS FET AMPLIFIER
Band Power GaAs FET
"GaAs FET"
60W 12V
flammable
RF push pull power amplifier
39dBm
F217
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F217
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET DESCRIPTION OUTLINE 20.4±0.2 The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
17GHz
17GHz
25deg
22dBm
39dBm
F217
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E 212 fet
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> v<é fâ a ip MGFS48B2122 2.1 - 2.2 GHZ BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS48B2122
MGFS48B2122
12GHz
25deg
12GHz
E 212 fet
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