Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFC4 Search Results

    SF Impression Pixel

    MGFC4 Price and Stock

    Abracon Corporation AMPMGFC-4.0000

    MEMS Crystal Oscillator 4MHz ?25ppm 4-Pin SMD Bulk - Bulk (Alt: AMPMGFC-4.0000)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-4.0000 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics AMPMGFC-4.0000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.49
    • 10000 $1.34
    		Get Quote
    Avnet Abacus AMPMGFC-4.0000 113 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Abracon Corporation AMPMGFC-42.5000T

    MEMS Crystal Oscillator 42.5MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-42.5000T)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-42.5000T Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics AMPMGFC-42.5000T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.41
    • 10000 $1.34
    		Get Quote
    Avnet Abacus AMPMGFC-42.5000T 113 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Abracon Corporation AMPMGFC-4.0000T3

    MEMS Crystal Oscillator 4MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-4.0000T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-4.0000T3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Abracon Corporation AMPMGFC-48.0000T3

    MEMS Crystal Oscillator 48MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-48.0000T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-48.0000T3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Abracon Corporation AMPMGFC-49.1520T3

    MEMS Crystal Oscillator 49.152MHz ?25ppm 4-Pin SMD T/R - Tape and Reel (Alt: AMPMGFC-49.1520T3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas AMPMGFC-49.1520T3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more MGFC4 price and stock on Findchips.com

    MGFC4 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC40V3642 Mitsubishi 3.6~4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V3742 Mitsubishi 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V3742 Mitsubishi Original PDF
    MGFC40V3742A Mitsubishi 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V4450 Mitsubishi 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V4450 Mitsubishi Original PDF
    MGFC40V4450A Mitsubishi 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V5258 Mitsubishi 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V5258 Mitsubishi 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V5964 Mitsubishi 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V5964 Mitsubishi Original PDF
    MGFC40V5964A Mitsubishi 5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V6472 Mitsubishi 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC40V6472 Mitsubishi 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V6472A Mitsubishi 6.4-7.2 GHz BAND 10W Internally Matched GaAs FET Scan PDF
    MGFC40V7177 Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7177A Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7177B Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7785 Mitsubishi 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF
    MGFC40V7785A Mitsubishi 7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.


    Original     		PDF MGFC4419G MGFC4419G 12GHz K 1358 fet transistor FET K 1358 C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581

    MGFC42V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V5964A MGFC42V5964A Item-51]

    MGFC42V5258

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		PDF MGFC42V5258 MGFC42V5258 June/2004

    GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    Abstract: MGFC41V3642 36f36
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V3642 3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+ /-0.3 R1.25 (1) 0.6+ /-0.15 2M IN The MGFC41V3642 is an internally impedence matched GaAs power FET especially designed for use in 3.6 - 4.2


    Original     		PDF MGFC41V3642 MGFC41V3642 50ohm Item-51] 30dBm Item-51 10MHz GAAS FET AMPLIFIER f 10Mhz to 2 GHz 36f36

    MGFC42V5867

    Abstract: No abstract text available
    Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8 ~ 6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGFC42V5867 75GHz MGFC42V5867

    MGFC44V4450

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V4450 4.4 ~ 5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC44V4450 MGFC44V4450

    MGFC44V5964

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V5964 5.9 ~ 6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		PDF MGFC44V5964 MGFC44V5964

    MGFC42V7785A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004

    MGFC41V5964

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4


    Original     		PDF MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm fet 30 f 124

    MGFC41V6472

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V6472 6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V6472 MGFC41V6472 30dBm 10MHz Oct-03

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		PDF MGFC40V3742 MGFC40V3742 29dBm 10MHz

    MGFC45V5964A

    Abstract: IM324
    Text: 27-March&#39;98 MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY MGFC45V5964A Notice : This is not a final specification. Some parametric limits are subject to change. 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched


    Original     		PDF 27-March MGFC45V5964A MGFC45V5964A IM324

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V5964A 5.9 – 6.4 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC45V5964A MGFC45V5964A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V4450A 4.4 – 5.0 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC45V4450A MGFC45V4450A -45dBc

    MGFC47B3538B

    Abstract: MGFC47B
    Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		PDF MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V3642 MGFC41V3642 -45dBc 30dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V7177 MGFC41V7177 -45dBc 30dBm

    MGFC40V6472

    Abstract: pir 428
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6 . 4 — 7.2G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2


    OCR Scan     		PDF MGFC40V6472 MGFC40V6472 ltem-01: ltem-511 pir 428

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: M ITSU B ISH I S E M IC O N D U C T O R <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz


    OCR Scan     		PDF MGFC47V5864 MGFC47V5864 47dBm 25deg 10MHz 5.8 ghz transmitter

    MGFC42V5867

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5867 5.8~6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC42V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGFC42V5867 75GHz MGFC42V5867 GF-18 25deg

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFC42V778S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFC42V6472 27C102P, RV-15 16-BIT)

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic


    OCR Scan     		PDF MGFC44V3436 FC44V3436 -45dBc 120mA