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    MGF49 Price and Stock

    Mitsubishi Electric MGF4916G-65

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    Bristol Electronics MGF4916G-65 151
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    MIT MGF4918G

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    Bristol Electronics MGF4918G 1,692
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    MIT MGF4919G

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    Bristol Electronics MGF4919G 4,000
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    Mitsubishi Electric MGF4953A-65

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    Bristol Electronics MGF4953A-65 147
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    MIT MGF4916G

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    Bristol Electronics MGF4916G 8,000
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    Find more MGF49 price and stock on Findchips.com

    MGF49 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF4903A Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF49151A Mitsubishi BUPER LOW NO SE INGAAS HEMT Scan PDF
    MGF4916 Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF
    MGF4916G Mitsubishi Super Low Noise InGaAs HEMT Original PDF
    MGF4918D Mitsubishi TAPE CARRIER SUPER LOW NOISE INGAAS HEMT Scan PDF
    MGF4919G Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF
    MGF491XG Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF
    MGF491xG Series Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF
    MGF4931AM Mitsubishi super-low noise HEMT (High Electron Mobility Transistor) Original PDF
    MGF4934AM Mitsubishi SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Original PDF
    MGF4934AM Mitsubishi SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Original PDF
    MGF4941AL Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF
    MGF4951 Mitsubishi SUPER LOW NOISE InGaAs HEMT Scan PDF
    MGF4951A Mitsubishi TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R Original PDF
    MGF4951A Mitsubishi Super Low Noise InGaAs HEMT Scan PDF
    MGF4952A Mitsubishi TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R Original PDF
    MGF4952A Mitsubishi Super Low Noise InGaAs HEMT Scan PDF
    MGF4953A Mitsubishi TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R Original PDF
    MGF4953A Mitsubishi SUPER LOW NOISE INGAAS Scan PDF
    MGF4953B Mitsubishi SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Original PDF

    MGF49 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153

    GD-30

    Abstract: No abstract text available
    Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz GD-30

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    GD-30

    Abstract: MGF4934AM
    Text: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF July/2007 MGF4934AM MGF4934AM 12GHz GD-30

    top 261

    Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi

    SENJU 221CM5

    Abstract: Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M
    Text: Technical Note 1-a Recommended Foot pattern for MGF495*A Point Point 1: 1: The The distance distance between between approaching approaching foot foot patterns patterns isis keeping 0.3 mm or more. keeping 0.3 mm or more. → (→ Prevent Prevent short short circuit


    Original     		PDF MGF495 NM-PC10 2062-221CM5-32-11 QL-1105E SENJU 221CM5 Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M

    MGF4964

    Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
    Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)


    Original     		PDF MGF4964BL MGF4964BL 20GHz 4000pcs MGF4964 Micro-X marking "K" transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496

    MGF4931AM

    Abstract: MGF4931 77153
    Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4931AM MGF4931AM 12GHz 15000pcs/reel MGF4931 77153

    HEMT marking K

    Abstract: MGF4953A
    Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K

    MGF4921AM

    Abstract: 5442
    Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4921AM MGF4921AM 15ric 5442

    MGF4951A

    Abstract: MGF4952A
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A

    Untitled

    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.


    Original     		PDF June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz

    MGF4953A

    Abstract: No abstract text available
    Text: Feb./2000 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Gs NFmin. Associated gain VDS=2V, Minimum noise figure ID=10mA MGF4953A f=12GHz MGF4954A Fig. 1 Top 12.0 - Side 13.5 0.45 0.65


    Original     		PDF MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A

    GD-32

    Abstract: mgf4941al fet K 727
    Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz


    Original     		PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727

    InGaAs HEMT mitsubishi

    Abstract: 4pin transistor top 205 MGF4934AM GD-30
    Text: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934AM MGF4934AM 12GHz InGaAs HEMT mitsubishi 4pin transistor top 205 GD-30

    mgf4941al

    Abstract: nozzle heater Halide hot air gun 450 chip 1097E MGF4941
    Text: Technical Note for MGF4941AL 1. Recommended foot pattern 2.80 Unit : mm Tolerance : ±0.05 2.60 2.06 0.89 2.80 2.60 2.06 2.75 4.15 0.74 * 0.69 0.54 4-φ0.3T/H Point Circled numbers are very important length determining the accuracy of self alignment. Please don’t change these length as far as


    Original     		PDF MGF4941AL 50-ohm 254mm) QL-1097E mgf4941al nozzle heater Halide hot air gun 450 chip 1097E MGF4941

    InGaAs HEMT mitsubishi

    Abstract: transistor P7d MGF4957A Fet P7d
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		PDF June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		PDF MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919

    MGF4918D

    Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
    Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F


    OCR Scan     		PDF GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D

    MGF4919G

    Abstract: GS 1223 mgf49 MGF4916G opa 741 4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F491xG series super-low -noise H E M T(H igh E lectron M obilily Transisto r) is de signed for use in L to Ku band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		PDF MGF491xG F491xG MGF491 4916G 4919G 12GFIz F4916G F4919G MGF4919G GS 1223 mgf49 MGF4916G opa 741 4919G

    MGF4313

    Abstract: MGF4919
    Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E


    OCR Scan     		PDF M6f4314£ MGF4313E MQF43t9iE MOF441 MGF44I7D MGF4714AP NH3F4814E MGF4918E MGF4919E MGF4313 MGF4919

    MGF4310

    Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
    Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.


    OCR Scan     		PDF MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318

    MGF4918D

    Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: M5M27C102P MGF4918D mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917