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MIT MGF4916G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF4916G		8,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
MIT MGF4919G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF4919G		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
MIT MGF4918G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF4918G		1,692			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGF4916G-65
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF4916G-65		151			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGF4953A-65
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGF4953A-65		147			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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MGF49 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
MGF4903A	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
MGF49151A	Mitsubishi	BUPER LOW NO SE INGAAS HEMT	Scan	PDF
MGF4916	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Original	PDF
MGF4916G	Mitsubishi	Super Low Noise InGaAs HEMT	Original	PDF
MGF4918D	Mitsubishi	TAPE CARRIER SUPER LOW NOISE INGAAS HEMT	Scan	PDF
MGF4919G	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Original	PDF
MGF491XG	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Original	PDF
MGF491xG Series	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Original	PDF
MGF4931AM	Mitsubishi	super-low noise HEMT (High Electron Mobility Transistor)	Original	PDF
MGF4934AM	Mitsubishi	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)	Original	PDF
MGF4934AM	Mitsubishi	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)	Original	PDF
MGF4941AL	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Original	PDF
MGF4951	Mitsubishi	SUPER LOW NOISE InGaAs HEMT	Scan	PDF
MGF4951A	Mitsubishi	TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R	Original	PDF

MGF4951A	Mitsubishi	Super Low Noise InGaAs HEMT	Scan	PDF
MGF4952A	Mitsubishi	TRANS JFET 2V 60MA 3LEAD-LESS CERAMIC T/R	Original	PDF
MGF4952A	Mitsubishi	Super Low Noise InGaAs HEMT	Scan	PDF
MGF4953A	Mitsubishi	TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R	Original	PDF
MGF4953A	Mitsubishi	SUPER LOW NOISE INGAAS	Scan	PDF
MGF4953B	Mitsubishi	SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package	Original	PDF

MGF49 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GD-30 Abstract: InGaAs HEMT mitsubishi Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.	Original	May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi	PDF
GD-30 Abstract: MGF4931AM 77153 Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153	PDF
GD-30 Abstract: No abstract text available Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	MGF4934CM MGF4934CM 12GHz GD-30	PDF
MGF4919G Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223 Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically	Original	MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223	PDF
GD-30 Abstract: MGF4934AM Text: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	July/2007 MGF4934AM MGF4934AM 12GHz GD-30	PDF
top 261 Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi Text: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz	Original	18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi	PDF
SENJU 221CM5 Abstract: Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M Text: Technical Note 1-a Recommended Foot pattern for MGF495*A Point Point 1: 1: The The distance distance between between approaching approaching foot foot patterns patterns isis keeping 0.3 mm or more. keeping 0.3 mm or more. → (→ Prevent Prevent short short circuit	Original	MGF495 NM-PC10 2062-221CM5-32-11 QL-1105E SENJU 221CM5 Senju 2062-221CM5-32-11 senju printing speed Senju oz-2062 PC10 senju-metal panasert 2535M	PDF
MGF4964 Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496 Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)	Original	MGF4964BL MGF4964BL 20GHz 4000pcs MGF4964 Micro-X marking "K" transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496	PDF
MGF4931AM Abstract: MGF4931 77153 Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	MGF4931AM MGF4931AM 12GHz 15000pcs/reel MGF4931 77153	PDF
HEMT marking K Abstract: MGF4953A Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.	Original	MGF4953A MGF4953A 12GHz 000pcs/reel HEMT marking K	PDF
MGF4921AM Abstract: 5442 Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	MGF4921AM MGF4921AM 15ric 5442	PDF
MGF4951A Abstract: MGF4952A Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band	Original	June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A MGF4951A MGF4952A	PDF
Untitled Abstract: No abstract text available Text: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.	Original	June/2004 MGF4951A/MGF4952A MGF4951A/MGF4952A 12GHz MGF4951A MGF4952A 12GHz	PDF
MGF4953A Abstract: No abstract text available Text: Feb./2000 Preliminary MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Gs NFmin. Associated gain VDS=2V, Minimum noise figure ID=10mA MGF4953A f=12GHz MGF4954A Fig. 1 Top 12.0 - Side 13.5 0.45 0.65	Original	MGF4953A/MGF4954A 12GHz MGF4953A MGF4954A	PDF

GD-32 Abstract: mgf4941al fet K 727 Text: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz	Original	MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727	PDF
InGaAs HEMT mitsubishi Abstract: 4pin transistor top 205 MGF4934AM GD-30 Text: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	MGF4934AM MGF4934AM 12GHz InGaAs HEMT mitsubishi 4pin transistor top 205 GD-30	PDF
mgf4941al Abstract: nozzle heater Halide hot air gun 450 chip 1097E MGF4941 Text: Technical Note for MGF4941AL 1. Recommended foot pattern 2.80 Unit : mm Tolerance : ±0.05 2.60 2.06 0.89 2.80 2.60 2.06 2.75 4.15 0.74 * 0.69 0.54 4-φ0.3T/H Point Circled numbers are very important length determining the accuracy of self alignment. Please don’t change these length as far as	Original	MGF4941AL 50-ohm 254mm) QL-1097E mgf4941al nozzle heater Halide hot air gun 450 chip 1097E MGF4941	PDF
InGaAs HEMT mitsubishi Abstract: transistor P7d MGF4957A Fet P7d Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4957A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4957A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.	Original	June/2004 MGF4957A MGF4957A 12GHz 3000ps, InGaAs HEMT mitsubishi transistor P7d Fet P7d	PDF
MGF4919 Abstract: MGF4919G Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The	OCR Scan	MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919	PDF
MGF4918D Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F	OCR Scan	GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D	PDF
MGF4919G Abstract: GS 1223 mgf49 MGF4916G opa 741 4919G Text: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F491xG series super-low -noise H E M T(H igh E lectron M obilily Transisto r) is de signed for use in L to Ku band am plifiers. The herm etically sealed m etal-ceram ic	OCR Scan	MGF491xG F491xG MGF491 4916G 4919G 12GFIz F4916G F4919G MGF4919G GS 1223 mgf49 MGF4916G opa 741 4919G	PDF
MGF4313 Abstract: MGF4919 Text: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E	OCR Scan	M6f4314£ MGF4313E MQF43t9iE MOF441 MGF44I7D MGF4714AP NH3F4814E MGF4918E MGF4919E MGF4313 MGF4919	PDF
MGF4310 Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318 Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.	OCR Scan	MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318	PDF
MGF4918D Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: M5M27C102P MGF4918D mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917	PDF

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MGF49 Datasheets (25)

MGF49 Datasheets Context Search

GD-30

GD-30

GD-30

MGF4919G

GD-30

top 261

SENJU 221CM5

MGF4964

MGF4931AM

HEMT marking K

MGF4921AM

MGF4951A

Untitled

MGF4953A

GD-32

InGaAs HEMT mitsubishi

mgf4941al

InGaAs HEMT mitsubishi

MGF4919

MGF4918D

MGF4919G

MGF4313

MGF4310

MGF4918D