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Mitsubishi Electric MGF1923 RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
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Quest Components	MGF1923		548			1 $10.5 10 $10.5 100 $10.5 1000 $5.25 10000 $5.25	Buy Now

MGF1923 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MGF1923		Mitsubishi	TAPE CARRIER SMALL SIGNAL GaAs FET		Scan	PDF
MGF1923		Mitsubishi	TAPE CARRIER SMALL SIGNAL GAAS FET		Scan	PDF

MGF1923 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli	OCR Scan	PDF	MGF1923 13dBm 12GHz
small signal GaAs FET Abstract: MGF1923 IL86 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 9 2 3 , low noise GaAs FET w ith an N-channel Schottky gate, is designed for use in S to Ku band ampli fiers. The M G F 1 9 2 3 is mounted in the super 12 tape.	OCR Scan	PDF	MGF1923 12GHz GF1923 small signal GaAs FET MGF1923 IL86
MGF1923 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 2 3 , lo w noise GaAs FET w ith an N -channel S ch o ttky gate, is designed fo r use in S to Ku band a m p li Unit: millimeters inches	OCR Scan	PDF	MGF1923 MGF1923 12GHz 12GHz
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1923 ! i TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION The M G F1923, low noise GaAs FET w ith an N-channel Schottky gate, is designed fo r use in S to Ku band ampli fiers. The M G F1923 is mounted in the super 12 tape.	OCR Scan	PDF	MGF1923 F1923, F1923 12GHz 13dBm 12GHz 10rnA
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	PDF	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A
MGF4919G Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10	OCR Scan	PDF	MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
MGF1425 Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01 Text: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are	OCR Scan	PDF	MGF1423/1425 MGF1323 MGF1923 MGFC1423, MGFC1425 MGF1323, MGF1423, MGF1425, MGF1923 MGF1425 MGFC1423 MGF1425-61-16 MGF1423 mitsubishi application mg series gaas MGF-C MGF1923-01