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Abstract: No abstract text available
Text: MGF1323 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)240m Maximum Operating Temp (øC)175 I(DSS) Min. (A)40m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20
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MGF1323
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MGF1323
Abstract: small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> beMTñST DD17Û3S BAT MGF1323 SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 2 3 , low -noise G aA s F E T w ith U n it, m illim eters inches an N -channel 4 M IN . 1.85 ± 0 . 2 4 M IN . (0 .1 5 7 M IN .) (0 .0 7 3 + 0 .0 0 8 ) (0 .1 5 7 M \N .)
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MGF1323
MGF1323,
13dBm
157MIN.
h24cia2tÃ
12GHz
MGF1323
small signal GaAs FET
L to Ku band amplifiers
KU 745
KU 608
ku 202
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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MGF1323
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.
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MGF1323
MGF1323,
13dBm
30rnA
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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MGF1425
Abstract: MGFC1423 MGF1425-61-16 MGF1423 MGFC1425 mitsubishi application mg series gaas MGF-C MGF1923-01
Text: A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION The MGF1423/1425 series devices are low noise GaAs FETs wtih N-channel schottky gates. These devices are suitable for a wide range of amplifier and oscillator applications in S to Ku-band. In die form, the devices are
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MGF1423/1425
MGF1323
MGF1923
MGFC1423,
MGFC1425
MGF1323,
MGF1423,
MGF1425,
MGF1923
MGF1425
MGFC1423
MGF1425-61-16
MGF1423
mitsubishi application mg series gaas
MGF-C
MGF1923-01
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