Untitled
Abstract: No abstract text available
Text: MGF1102 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)80m P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)15m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25
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MGF1102
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Untitled
Abstract: No abstract text available
Text: MGF1100 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6 I(D) Max. (A)60m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.10m
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MGF1100
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UF4007 equivalent
Abstract: No abstract text available
Text: User's Guide SLLU136A – September 2011 – Revised November 2012 ISO5500EVM This document describes the ISO5500 Evaluation Module EVM and allows designers to analyze and evaluate the Texas Instruments ISO5500 Isolated Gate Driver. The ISO5500EVM can be used to evaluate device parameters while acting as a guide for board layout.
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SLLU136A
ISO5500EVM
ISO5500
ISO5500EVM
10-nF)
O-247
ISO5500.
UF4007 equivalent
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MGF1802
Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Text: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a
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MGF431OD
12GHz
MGF4314D:
MGF4316D:
MGF4317D:
MGF4318D:
12GHz
MGF4S17D-O1
MGF43I4E45.
MGF1802
mgf431
MGF43180
mitsubishi mgf
MGF1902B-65
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MGF1102
Abstract: mgf11 dual-gate N-Channel, Dual-Gate FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 ¡ FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications. Unit: millimeters inches
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MGF1102
MGF1102
mgf11
dual-gate
N-Channel, Dual-Gate FET
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MGF1102
Abstract: N-Channel, Dual-Gate FET 251C dual-gate
Text: bSMSâST D017ÔE3 Sbö MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1102 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION OUTLINE DRAWING The M G F 1 1 0 2 is a low noise and high gain GaAs dual gate FET for L to C band applications.
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MGF1102
MGF1102
N-Channel, Dual-Gate FET
251C
dual-gate
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3SK242
Abstract: MGF1100 3SK246 3SK243 3SK244 tv tuner 3SK245 470M M91F gaas fet vhf uhf
Text: - 184 - f € m £ tt € m & m & * 1 * K # X fê Æ: S r- V m * à (V) * * * (A) P d/ P c h (W> Igss (max) (A) Vg s (V) fô & fê V pi (min) (max) V g 2S (max) (V) (A) (A) (V) te ìf (Ta=25'C) Vp2 (max) (V) gm (min) (typ) V d s (S) 1 (si (V) Vg i s (V)
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3SK242
3SK243
3SK244
3SK245
3SK246
15dBmin/17dBtyp
900MHz
3SK244
20dBmin/23dBtyp
MGF1100
tv tuner
470M
M91F
gaas fet vhf uhf
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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MGF1202
Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)
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MG15C4HM1
MG15D4GM1
MG15D4HM1
MG15D6EM1
MG15G1AM1
450220AB)
MG30N10E
05typ
O-220AB)
MG30N06EL
MGF1202
MGF1402
mgf1102
MGF1305
MG36N06E
MGF1302
MG35N06E
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MGF1100
Abstract: GF1100 Gf-1100 mgf11 dual-gate N-Channel, Dual-Gate FET
Text: MITSUBISHI {DISCRETE SC> "TI DE IbEMTfla11! □□10007 MITSUBISHI SEMICONDUCTOR <GaAs FET> 6 2 4 98 29 MITSUBISHI DISCRETE SC 9 ID 10007 D 1-31-2S M GF1100 FOR LOW-NOISE AMPLIFIERS DUAL-GATE N-CHANNEL SCHOTTKY BARRIER GATE TY P E DESCRIPTION The M G F 1 1 0 0 is designed fo r use in the 500 M H z to 4 G H z
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1-31-2S
GF1100
MGF1100
GF1100
Gf-1100
mgf11
dual-gate
N-Channel, Dual-Gate FET
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