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    Mitsubishi Electric MGF0905A01

    RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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    MGF0905A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF0905A Mitsubishi L,S BAND POWER GaAs FET Original PDF
    MGF0905A Mitsubishi MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET Scan PDF

    MGF0905A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mitsubishi

    Abstract: MGF0905A mgf09 Band Power GaAs FET s band
    Text: MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POWER GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF0905A mitsubishi MGF0905A mgf09 Band Power GaAs FET s band

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION


    Original     		PDF MGF0905A MGF0905A, 65GHz 26dBm 800mA

    MGF0905A

    Abstract: IDS800
    Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3


    Original     		PDF MGF0905A MGF0905A, 65GHz 26dBm 800mA MGF0905A IDS800

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0905A L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs FET with an N-channel schottky U n it: m illim eters inches gate, is designed for use in U H F band amplifiers. FEATURES • High output power


    OCR Scan     		PDF MGF0905A 34dBm 65GHz, 26dBm

    GF-17

    Abstract: gw 340 GD10 MGF0905A MGF1601
    Text: HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type MGF1601B MG F1801B MQF0904A MGF0905A MGF090BB MQF0907B MQF2407A MGF241SA MGF2430A MGF244B PldB dBm 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB)


    OCR Scan     		PDF /09xxx/24xxx GD-10 GF-21 GF-17 MGF1601B F1801B gw 340 GD10 MGF0905A MGF1601

    MGF0905A

    Abstract: No abstract text available
    Text: A m its u b is h i ELECTRONIC DEVICE GROUP Die_ MGFC0904, MGFC0905 Package MGF0904A, MGF0905A DESCRIPTION MGFC0905/MGF0905A FEATURES The MGF0904A and MGF0905A GaAs FETs with N-channel Schottky gates, are designed for use in UHF through S-band amplifiers.


    OCR Scan     		PDF MGF0904A MGF0905A MGFC0904/MGF0904AFEATURES 600mW MGFC0904, MGFC0905 MGF0904A, MGF0905A MGFC0905/MGF0905A 200mW

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> Í M G F0905A ! L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 5 A , GaAs F E T w ith an N-channel schottky U n it: m illim eters [inches gate, is designed for use iri U H F band amplifiers. FEATURES


    OCR Scan     		PDF F0905A 26dBm 26dBm