Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
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MG50Q6ES40
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG50Q6ES50A
961001EAA1
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M C>;noRF<;in HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
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MG50Q6ES40
Te--25
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PDF
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DC MOTOR CONTROL IGBT
Abstract: ES50A
Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage
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MG50Q6ES50A
MG50Q
ES50A
961001EAA1
DC MOTOR CONTROL IGBT
ES50A
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PDF
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MG50Q6ES40
Abstract: g50q6es40
Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
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MG50Q6ES40
G50Q6ES40
2-94B1A
961001EAA2
MG50Q6ES40
g50q6es40
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES51
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES50
961001EAA1
TjS125Â
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PDF
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ksh 200 TRANSISTOR equivalent
Abstract: MG50Q6ES51 G50Q6ES51
Text: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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OCR Scan
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MG50Q6ES51
G50Q6ES51
2-108E1A
961001EAA1
ksh 200 TRANSISTOR equivalent
MG50Q6ES51
G50Q6ES51
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES51A
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage
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OCR Scan
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MG50Q6ES40
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PDF
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MG50Q6ES50
Abstract: P channel 600v 50a IGBT vqe 71
Text: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES50
2-108E1A
961001EAA1
10//s
MG50Q6ES50
P channel 600v 50a IGBT
vqe 71
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PDF
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ksh 200 TRANSISTOR equivalent
Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 5 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES51A
MG50Q6ES51
2-108E2A
961001EAA1
ksh 200 TRANSISTOR equivalent
MG50Q6ES51A
KSH 200 TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG50Q6ES40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES40 H IGH P O W E R SW IT C H IN G APPLIC ATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • T h e E lectro d e s are Iso lated from C ase. • 6 IG B T s a re B u ilt Into 1 P ack ag e.
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MG50Q6ES40
961001EAA2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T EN TATIV E MG50Q6ES50A T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES50A H IGH P O W E R SW IT C H IN G A P PL IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • • High Input Impedance High Speed : tf= 0 .3 ,k s Max.
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MG50Q6ES50A
961QQJEAA1
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.
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MG50Q6ES51A
961001EAA1
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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OCR Scan
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MG50Q6ES51
961001EAA1
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE m . a ^ ^r n n ^ HIGH POWER SWITCHING APPLICATIONS SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage
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MG50Q6ES50A
961001EAA1
f1200V,
--10V
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PDF
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MG50Q6ES50A
Abstract: vqe 71
Text: TOSHIBA MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT
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MG50Q6ES50A
2-108E2A
961001EAA1
10//s
MG50Q6ES50A
vqe 71
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PDF
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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PDF
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MG15J6ES40
Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40
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MG15J6ES40
MG2SJ6KS40
MG50J2YS50
MG50J6KS50
MG75J2YS50
MG75J6KS50
100J2YS50
MG100J6KS50
MG150J2YS50
MG200J2YS50
MG150Q2YS40
MG300J2YS50
MG300Q2YS40
MG75Q2YS40
MG25Q2YS40
MG200Q2YS40
MG300Q2YS4
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PDF
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MG40001US41
Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50
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MG400J1US51
MG800J1US51
MG300J1US51
MG40J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG400J2VS50
MG2SJ6ES40
MG40001US41
MG806ES42
MG15J6ES40
MG75J2YS50
MG100Q2YS42
mg300q1us41
MG50Q2YS40
mg150j1
MG100J2YS50
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PDF
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MG200J2YS50
Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)
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flnana30H
ot-40Â
MG200Q1US41
2-109A4A
MG300Q1US41
MG300Q1US51
2-109F1A
MG400Q1US41
MG200J2YS50
2-94D4A
MG75Q2YS50
MG300J2YS50
2-109C1A
MG400J2YS50
mg200q2ys50
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PDF
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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PDF
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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PDF
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