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    MG50Q6ES Search Results

    MG50Q6ES Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50Q6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q6ES11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q6ES11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG50Q6ES40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q6ES40 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50Q6ES50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50Q6ES50A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50Q6ES51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q6ES51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG50Q6ES51A Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG50Q6ES51A Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF

    MG50Q6ES Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M C>;noRF<;in HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40 Te--25

    DC MOTOR CONTROL IGBT

    Abstract: ES50A
    Text: TO SHIBA TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE MG50Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A MG50Q ES50A 961001EAA1 DC MOTOR CONTROL IGBT ES50A

    MG50Q6ES40

    Abstract: g50q6es40
    Text: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40 G50Q6ES40 2-94B1A 961001EAA2 MG50Q6ES40 g50q6es40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50 961001EAA1 TjS125Â

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 G50Q6ES51
    Text: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51 G50Q6ES51 2-108E1A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51 G50Q6ES51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES40

    MG50Q6ES50

    Abstract: P channel 600v 50a IGBT vqe 71
    Text: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50 2-108E1A 961001EAA1 10//s MG50Q6ES50 P channel 600v 50a IGBT vqe 71

    ksh 200 TRANSISTOR equivalent

    Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
    Text: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 5 0 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51A MG50Q6ES51 2-108E2A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51A KSH 200 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q6ES40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES40 H IGH P O W E R SW IT C H IN G APPLIC ATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • T h e E lectro d e s are Iso lated from C ase. • 6 IG B T s a re B u ilt Into 1 P ack ag e.


    OCR Scan     		PDF MG50Q6ES40 961001EAA2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T EN TATIV E MG50Q6ES50A T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG50Q6ES50A H IGH P O W E R SW IT C H IN G A P PL IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • • High Input Impedance High Speed : tf= 0 .3 ,k s Max.


    OCR Scan     		PDF MG50Q6ES50A 961QQJEAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG50Q6ES51A 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES51 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MG50Q6ES50A TOSHIBA GTR MODULE m . a ^ ^r n n ^ HIGH POWER SWITCHING APPLICATIONS SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG50Q6ES50A 961001EAA1 f1200V, --10V

    MG50Q6ES50A

    Abstract: vqe 71
    Text: TOSHIBA MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT


    OCR Scan     		PDF MG50Q6ES50A 2-108E2A 961001EAA1 10//s MG50Q6ES50A vqe 71

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    MG200J2YS50

    Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
    Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)


    OCR Scan     		PDF flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497