Untitled
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
15tended
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MG200Q1US51
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG200Q1US51
MG200Q1US51
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Untitled
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode
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MG200Q1US51
2-109F1A
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MG200Q1US51
Abstract: No abstract text available
Text: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm 2–M4 2–M6 4– 6.6 0.3 Low saturation voltage : VCE sat = 3.6V (Max.) E G E C 24 0.3 20 0.3 29 0.3 Enhancement-mode
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MG200Q1US51
2-109F1A
MG200Q1US51
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .
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MG200Q1US51
MG200
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transistor JSW
Abstract: jSw Diode
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG200Q1US51
transistor JSW
jSw Diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage ; v Uifi (sat) —°-ovuviaJi.;
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MG200Q1US51
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MG200Q1US51
Abstract: MG200Q1
Text: TOSHIBA MG200Q1US51 M G 2 0 0 Q 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)
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MG200Q1US51
2-109F1A
Tc-25Â
MG200Q1US51
MG200Q1
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MG200Q1US51
Abstract: TV-19 tlf 106
Text: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)
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MG200Q1US51
2-109F1A
Tc-25Â
MG200Q1US51
TV-19
tlf 106
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)
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MG200Q1US51
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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