Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MG120V2YS40 Search Results

    MG120V2YS40 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG120V2YS40 Toshiba TRANS IGBT MODULE N-CH 1700V 120A 7(2-109C1A) T/R Original PDF
    MG120V2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG120V2YS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF

    MG120V2YS40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode bridge toshiba

    Abstract: MG120V2YS40
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG120V2YS40 2-109C1A 000707EAA2 diode bridge toshiba MG120V2YS40

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG120V2YS40 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG120V2YS40 2-94C1A 000707EAA2

    MG120V2YS40

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG120V2YS40 2-109C1A 120transportation MG120V2YS40

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    LC-2-G

    Abstract: No abstract text available
    Text: TECHNICAL DATA MG120V2YS40 High Power Switching Applications. Motor Control Applications. # # # # # The Electrodes are Isolated from Case. High Input Im pedance Includes a Com plete Half Bridge in O ne Package. Enhancem ent-M ode High Speed: t, = 1.5 is (M ax. (I, = 120 A)


    OCR Scan     		PDF MG120V2YS40 120Time LC-2-G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 120V2YS40 HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG120V2YS40 120V2YS40

    MG120V2YS40

    Abstract: No abstract text available
    Text: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG120V2YS40 120V2YS40 2-94C1A MG120V2YS40

    YS40

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG120V2YS40 G120V2YS40 YS40

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG120V2YS40 G120V2YS40 2-94C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG120V2YS40 TO SHIBA GTR MODULE SILICON N CH AN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO N S MOTOR CO N TRO L APPLICATION S • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


    OCR Scan     		PDF MG120V2YS40

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js