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    MG120V2YS40 Search Results

    MG120V2YS40 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG120V2YS40 Toshiba TRANS IGBT MODULE N-CH 1700V 120A 7(2-109C1A) T/R Original PDF
    MG120V2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG120V2YS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF

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    diode bridge toshiba

    Abstract: MG120V2YS40
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original
    PDF MG120V2YS40 2-109C1A 000707EAA2 diode bridge toshiba MG120V2YS40

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original
    PDF MG120V2YS40 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original
    PDF MG120V2YS40 2-94C1A 000707EAA2

    MG120V2YS40

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original
    PDF MG120V2YS40 2-109C1A 120transportation MG120V2YS40

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original
    PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original
    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    LC-2-G

    Abstract: No abstract text available
    Text: TECHNICAL DATA MG120V2YS40 High Power Switching Applications. Motor Control Applications. # # # # # The Electrodes are Isolated from Case. High Input Im pedance Includes a Com plete Half Bridge in O ne Package. Enhancem ent-M ode High Speed: t, = 1.5 is (M ax. (I, = 120 A)


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    PDF MG120V2YS40 120Time LC-2-G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 120V2YS40 HIGH POWER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


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    PDF MG120V2YS40 120V2YS40

    MG120V2YS40

    Abstract: No abstract text available
    Text: TO SHIBA MG120V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG120V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


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    PDF MG120V2YS40 120V2YS40 2-94C1A MG120V2YS40

    YS40

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan
    PDF MG120V2YS40 G120V2YS40 YS40

    Untitled

    Abstract: No abstract text available
    Text: MG120V2YS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G120V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • 4-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan
    PDF MG120V2YS40 G120V2YS40 2-94C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG120V2YS40 TO SHIBA GTR MODULE SILICON N CH AN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO N S MOTOR CO N TRO L APPLICATION S • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


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    PDF MG120V2YS40

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


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    PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


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    PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


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    PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js