IN50C
Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Text: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage
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RHD5900,
RHD5901,
RHD5902
-S-1083"
RHD5900:
inputD5902-901-1S
IN50C
QML-38534
IN50B
Dosimeter radiation space
MARKING CODE smd R05
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Untitled
Abstract: No abstract text available
Text: Standard Products RAD7214-NNJx Power MOSFET Die Preliminary Data Sheet July 2014 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION 250Vbreakdown voltage 2.5 A current rating 1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are
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RAD7214-NNJx
250Vbreakdown
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: Standard Products RAD7230-NNJx Power MOSFET in SMD 0.5 Package Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION 200Vbreakdown voltage 12 A current rating 0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are
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RAD7230-NNJx
200Vbreakdown
22RDS
160nC
-55oC
125oC
MIL-STD750
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add electrostatic discharge human body model limit under paragraph 1.3. - ro 10-02-12 C. SAFFLE B Make changes to footnote 6/ under paragraph 1.5 and footnote 3/ under Table IA. Add a paragraph under paragraph 1.5. - ro
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5962R0922503V9A
ISL70001ASEHVX
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RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
DocID18351
RAD SMD MARKING CODE
smd diode marking code TO3
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2N7545U3
Abstract: 2n7545 2N7546 2N7546u3 2N7547T3 2N7548 2N7548T3 712c MIL-PRF-19500/2N7546U3 2N7547
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 January 2011. MIL-PRF-19500/712C 27 October 2010 SUPERSEDING MIL-PRF-19500/712B 25 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/712C
MIL-PRF-19500/712B
2N7545U3,
2N7546U3,
2N7547T3,
2N7548T3,
MIL-PRF-19500.
2N7545U3
2n7545
2N7546
2N7546u3
2N7547T3
2N7548
2N7548T3
712c
MIL-PRF-19500/2N7546U3
2N7547
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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5962F0052301V9A
Abstract: IS1009RH IS2-1009RH-Q CAN-3 IS2-1009RH-8 IS2-1009RH-Q 5962-00523
Text: IS-1009RH 2.5V Reference Page 1 of 2 IS-1009RH Printer Friendly Version 2.5V Reference Datasheets, Related Docs & Simulations Description Key Features Parametric Data Application Diagrams Related Devices Ordering Information iBuy direct from Intersil iBuy direct - out of stock
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IS-1009RH
IS-1009RH
IS0-1009RH-Q
IS2-1009RH-8
IS2-1009RH-Q
ISYE-1009RH-8
ISYE-1009RH-Q
ISYE-1009RHQS9000
5962F0052301Dose
IS1009RH
5962F0052301V9A
IS2-1009RH-Q CAN-3
5962-00523
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
STRH40N6SG
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2N7520
Abstract: 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/732B 23 April 2010 SUPERSEDING MIL-PRF-19500/732A 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/732B
MIL-PRF-19500/732A
2N7519U3,
2N7519U3C,
2N7519T3,
2N7520U3,
2N7520U3C,
2N7520T3,
MIL-PRF-19500.
2N7520
2N7520U3
2N7519u3
2N7520T3
IRHNJC597034
2N7519T3
2N7519
IRHNJ597Z30
IRHNJ597034
smd transistor marking BL
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9375.1B
Abstract: 93751b IRHNJ53Z30 IRHNJ54Z30 IRHNJ57Z30 IRHNJ58Z30
Text: PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) RDS(on) 0.020Ω ID 22A* IRHNJ53Z30 300K Rads (Si) 0.020Ω 22A* IRHNJ54Z30
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93751B
IRHNJ57Z30
IRHNJ57Z30
IRHNJ53Z30
IRHNJ54Z30
IRHNJ58Z30
1000K
MIL-STD-750,
MlL-STD-750,
9375.1B
93751b
IRHNJ53Z30
IRHNJ54Z30
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IRHNJ597230
Abstract: IRHNJ598230 IRHNJ593230
Text: PD - 94046A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ594230 600K Rads (Si)
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4046A
IRHNJ597230
IRHNJ597230
IRHNJ593230
IRHNJ594230
IRHNJ598230
1000K
-340A/
-200V,
MIL-STD-750,
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IRHNJ53130
Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130
Text: PD - 93754C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130
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93754C
IRHNJ57130
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
MIL-STD-750,
MlL-STD-750,
IRHNJ54130
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smd transistor L33
Abstract: smd transistor ab2 L33 SMD w32 smd transistor 143 ah5 SMD SMD l33 Transistor a33 smd diode w32 smd diode w32 smd transistor smd diode E15
Text: QPro Virtex 2.5V Radiation Hardened FPGAs R DS028 v1.2 November 5, 2001 2 Preliminary Product Specification Features • 0.22 µm 5-layer epitaxial process • QML certified • Radiation hardened FPGAs for space and satellite applications • Guaranteed total ionizing dose to 100K Rad(si)
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DS028
5962R9957201QYC
XQVR300-4CB228Q
5962R9957201QZC
5962R9957301QYC
XQVR600-4CB228Q
5962R9957301QZC
5962R9957401QXC
smd transistor L33
smd transistor ab2
L33 SMD
w32 smd transistor 143
ah5 SMD
SMD l33 Transistor
a33 smd diode
w32 smd diode
w32 smd transistor
smd diode E15
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IRHNJ53130
Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130
Text: PD - 93754D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130
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93754D
IRHNJ57130
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
MIL-STD-750,
MlL-STD-750,
IRHNJ54130
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IRHNJ53230
Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Text: PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)
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3753A
IRHNJ57230
IRHNJ57230
IRHNJ53230
IRHNJ54230
IRHNJ58230
1000K
MIL-STD-750,
MlL-STD-750,
IRHNJ54230
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300K-1000KRads
Abstract: IRHNJ597230 IRHNJ
Text: PD - 94046 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ594230 600K Rads (Si)
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IRHNJ597230
IRHNJ593230
IRHNJ594230
IRHNJ598230
1000K
-340A/
-200V,
MIL-STD-750,
MlL-STD-750,
300K-1000KRads
IRHNJ
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IRHNJ593130
Abstract: IRHNJ597130 IRHNJ598130 300K-1000KRads
Text: PD - 94047 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A IRHNJ594130 600K Rads (Si)
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IRHNJ597130
IRHNJ597130
IRHNJ593130
IRHNJ594130
IRHNJ598130
1000K
-320A/
-100V,
MIL-STD-750,
MlL-STD-750,
300K-1000KRads
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IRHNJ53130
Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130 93754B
Text: PD - 93754B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130
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93754B
IRHNJ57130
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
moto252-7105
IRHNJ54130
93754B
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IRHNJ54130
Abstract: JANSR2N7481U3 IRHNJ53130 IRHNJ57130 IRHNJ58130 JANSF2N7481U3 mev smd diode
Text: PD - 93754F IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 TECHNOLOGY 5 Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130
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93754F
IRHNJ57130
JANSR2N7481U3
MIL-PRF-19500/703
IRHNJ53130
IRHNJ54130
JANSF2N7481U3
JANSG2N7481U3
IRHNJ54130
JANSR2N7481U3
IRHNJ53130
IRHNJ57130
IRHNJ58130
JANSF2N7481U3
mev smd diode
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JANSR2N7481U3
Abstract: No abstract text available
Text: PD-93754G IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 500K Rads (Si)
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PD-93754G
IRHNJ57130
IRHNJ53130
IRHNJ54130
IRHNJ58130
1000K
JANSR2N7481U3
MIL-PRF-19500/703
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mosfet motor dc 48v
Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 IRHNJ53034
Text: PD - 93752A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034
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3752A
IRHNJ57034
IRHNJ57034
IRHNJ53034
IRHNJ54034
IRHNJ58034
1000K
c252-7105
mosfet motor dc 48v
IRHNJ54034
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IRHNJ57Z30
Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Text: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30
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3751A
IRHNJ57Z30
IRHNJ57Z30
IRHNJ53Z30
IRHNJ54Z30
IRHNJ58Z30
1000K
motor252-7105
IRHNJ54Z30
el 803 s
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